SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
M68731H
MITSUBISHI RF POWER MODULE
Nov. 97
1
PIN:
P
in
: RF INPUT
V
GG
: GATE BIAS SUPPLY
V
DD
: DRAIN BIAS SUPPLY
P
O
: RF OUTPUT
GND: FIN
BLOCK DIAGRAM
1
2
3
4
5
4
5
3
2
Symbol
Parameter
Test conditions
Limits
Min
Max
Unit
f
P
O
T
2f
O
in
-
Frequency range
Output power
Total efficiency
2nd. harmonic
Input VSWR
Load VSWR tolerance
V
DD
=7.2V,
V
GG
=3.5V,
P
in
=50W
V
DD
=9.2V, P
in
=50mW,
P
O
=7W (V
GG
adjust), Z
L
=20:1
150
175
7
50
-20
No degradation or
destroy
MHz
W
%
dBc
-
-
Note. Above parameters, ratings, limits and test conditions are subject to change.
ELECTRICAL CHARACTERISTICS
(Tc=25
C,Z
G
=Z
L
=50
unless otherwise noted)
Symbol
Parameter
Conditions
Ratings
Unit
ABSOLUTE MAXIMUM RATINGS
(Tc=25
C unless otherwise noted)
Note. Above parameters are guarateed independently.
V
9.2
V
DD
Supply voltage
V
4
V
GG
Gate bias voltage
mW
70
P
in
Input power
W
10
P
O
Output power
C
-30 to +100
T
C (OP)
Operation case temperature
C
-40 to +110
T
stg
Strage temperature
V
GG
3.5V, Z
G
=Z
L
=50
f=150-175MHz, Z
G
=Z
L
=50
f=150-175MHz, Z
G
=Z
L
=50
f=150-175MHz, Z
G
=Z
L
=50
Stability
4
Z
G
=50
, V
DD
=4-9.2V,
Load VSWR
<
4:1
-
-
No parasitic oscillation
13.71
18.81
61
23.91
OUTLINE DRAWING
Dimensions in mm
300.2
26.60.2
2-R1.50.1
1
2
3
4
5
0.45
21.20.2
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
M68731H
MITSUBISHI RF POWER MODULE
Nov. 97
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
GATE VOLTAGE V
GG
(V)
100
10
1
2
100
10
1
0.1
0.5
3.5
3
1
1.5
2.5
OUTPUT POWER, TOTAL EFFICENCY
VS. INPUT POWER
INPUT POWER P
in
(mW)
100
10
1
1
100
10
1
0.1
0.01
100
0.1
10
OUTPUT POWER, TOTAL EFFICENCY
VS. INPUT POWER
INPUT POWER P
in
(mW)
100
10
1
1
100
10
1
0.1
0.01
100
0.1
10
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
SUPPLY VOLTAGE V
DD
(V)
100
60
40
20
3
4
6
8
9
50
30
16
10
6
4
2
0
@f=175MHz
V
GG
=3.5V
P
in
=50mW
P
O
80
14
5
7
8
12
90
70
OUTPUT POWER, TOTAL EFFICIENCY
VS. SUPPLY VOLTAGE
SUPPLY VOLTAGE V
DD
(V)
100
60
40
20
3
4
6
8
9
50
30
16
10
6
4
2
0
@f=150MHz
V
GG
=3.5V
P
in
=50mW
80
14
5
7
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
FREQUENCY f (MHz)
90
50
20
130
140
150
180
in
70
30
14
11
7
4
2
0
160
170
80
40
60
9
5
3
1
13
10
6
8
12
@V
DD
=7.2V
V
GG
=3.5V
P
in
=50mW
P
O
T
8
12
90
70
P
O
T
T
@V
DD
=7.2V
V
GG
=3.5V
f=150MHz
P
O
T
@V
DD
=7.2V
V
GG
=3.5V
f=175MHz
P
O
T
P
O
T
@V
DD
=7.2V
P
in
=50mW
f=150MHz
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
M68731H
MITSUBISHI RF POWER MODULE
Nov. 97
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
GATE VOLTAGE V
GG
(V)
100
10
1
2
100
10
1
0.1
0.5
3.5
3
1
1.5
2.5
@V
DD
=7.2V
P
in
=50mW
f=175MHz
P
O
T
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