Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR16A, BCR16B, BCR16C, BCR16E
APPLICATION
Contactless AC switches, light dimmer, on/off and speed control of small induction motors,
on/off control of traffic signals, on/off control of copier lamps,
solid state relay, microwave ovens
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Conditions
Unit
A
A
A
2
s
W
W
V
A
C
Ratings
16
170
121
5
0.5
10
2
20 ~ +125
V
1. Gate open.
Commercial frequency, sine full
wave, 360
conduction
BCR16A, B, C
BCR16E
T
c
=99
C
T
b
=71
C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
I
T (RMS)
...................................................................... 16A
V
DRM
..............................................................400V/500V
I
FGT
!
, I
RGT
!
, I
RGT
#
........................................... 30mA
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V
1
Non-repetitive peak off-state voltage
V
1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
600
10
500
700
2
1
3
2.0 MIN
1
2
3
3 MAX
8.7 MAX
2.0 MIN
6.5 MAX
19 MAX
14 MAX
11.1 MAX
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
OUTLINE DRAWING
Dimensions
in mm
BCR16A
Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Test conditions
BCR16A
BCR16B
BCR16C
BCR16E
BCR16A only, 10 sec.
BCR16C only (Typical value)
BCR16E only, T
a
=25
C, AC 1 minute, T
2
Terminal to base
Symbol
T
stg
--
--
--
V
iso
Parameter
Storage temperature
Weight (Typical value)
Soldering temperature
Mounting torque
Isolated voltage
Ratings
20 ~ +125
3.0
8.5
8.5
9.5
230
30
2.94
1500
Unit
C
g
C
kgcm
Nm
V
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
R
th (j-b)
(dv/dt)
c
Test conditions
T
j
=125
C, V
DRM
applied
T
c
=25
C, T
b
=25
C (BCR16E only), I
TM
=25A , Instantaneous
measurement
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to case (BCR16A, BCR16B, BCR16C)
Junction to base (BCR16E)
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
C/W
V/
s
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
!
@
#
!
@
#
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
V
2
Gate trigger current
V
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
V
2. Measurement using the gate trigger characteristics measurement circuit.
V
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
ELECTRICAL CHARACTERISTICS
Test conditions
Voltage
class
8
10
V
DRM
(V)
400
500
Min.
--
10
--
10
Commutating voltage and current waveforms
(inductive load)
(dv/dt)
c
Symbol
R
L
R
L
Unit
V/
s
1. Junction temperature
T
j
=125
C
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=8A/ms
3. Peak off-state voltage
V
D
=400V
Limits
Min.
--
--
--
--
--
--
--
--
0.2
--
--
V
3
Max.
3.0
1.6
1.5
1.5
1.5
30
30
30
--
1.2
2.5
--
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
10
0
2 3
5 7 10
1
80
40
2 3
5 7 10
2
4
4
120
160
200
60
20
100
140
180
0
4.4
0.4
1.2
2.0
2.8
3.6
0.8
1.6
2.4
3.2
4.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
C
= 25C
T
b
= 25C
10
0
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
3
2
10
1
7
5
3
2
7
5
7
5
3
2
10
1
V
GD
= 0.2V
P
GM
= 5.0W
P
G(AV)
= 0.5W
V
GM
= 10V
V
GT
= 1.5V
I
GM
= 2A
I
FGT I,
I
RGT I,
I
RGT III
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
200
160
120
80
40
180
140
100
60
20
0
160
60
20
40
0
20 40
80 100 120 140
TEST PROCEDURE
,
AND
GATE TRIGGER CURRENT
GATE TRIGGER
VOLTAGE
GATE TRIGGER CURRENTVOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT VOLTAGE
( T
j
= t
C
)
GATE TRIGGER CURRENT VOLTAGE
( T
j
= 25
C
)
PERFORMANCE CURVES
1
2
3
5.3 MAX
(
16)
230.2
33 MAX
2-
3.2 MIN
20 MAX
21 MAX
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
OUTLINE DRAWING
Dimensions
in mm
BCR16B
BCR16E
BCR16C
(16.2)
1
2
3
1.9 MAX
10 MAX
2.0 MIN
M6
1 . 0
14
8.7 MAX
3 MIN
1
2
3
8.7 MAX
1.8 MAX
2-
3.2 MIN
230.2
33 MAX
20 MAX
2.0 MIN
15.5 MAX
8 MAX
20.5 MAX
16 MAX
8.5 MAX
2.5 MIN
2.0 MIN
1
2
3
8.7 MAX
1.8
MAX
16 MAX
22 MAX
10 MAX
2.0 MIN
21 MAX
Feb.1999
2 3
10
1
5 7 10
0
2 3 5
2 3
10
2
5 7 10
3
7 10
1
2 3 5 7 10
2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2.4
2.0
1.6
1.2
0.8
0.4
0
2.8
3.2
2 3
10
2
5 7 10
3
2 3 5 7 10
4
2 3 5 7 10
5
160
120
100
60
20
0
20
0
2
6
10
14 16 18
40
80
140
4
8
12
80 80 t2.0
160 160 t4.0
120 120 t3.0
ALL FINS ARE
BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
NATURAL CONVECTION
: MOUNTING ON FIN
WITH SOLDER
: MOUNTING PLATE
WITHOUT GREASE
40
30
25
15
5
0
20
0
2
6
10
14 16 18
10
20
35
4
8
12
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
20
0
2
6
10
14 16 18
40
80
140
4
8
12
BCR16A, BCR16B,
BCR16C
BCR16E
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360
CONDUCTION
RESISTIVE,
INDUCTIVE LOADS
160
120
100
60
20
0
20
0
2
6
10
14 16 18
40
80
140
4
8
12
80 80 t2.0
160 160 t4.0
120 120 t3.0
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO BASE) (BCR16E)
TRANSIENT THERMAL IMPEDANCE (C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE) (BCR16A, B, C)
TRANSIENT THERMAL IMPEDANCE (C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR16A)
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR16B)
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
NATURAL CONVECTION
: MOUNTING ON FIN
WITHOUT GREASE
: INSULATED PLATE
WITH GREASE
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR16C)
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR16E)
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
160
120
100
60
20
0
20
0
2
6
10
14 16 18
40
80
140
4
8
12
80 80 t2.0
160 160 t4.0
120 120 t3.0
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
RESISTIVE, INDUCTIVE LOADS
NATURAL CONVECTION
160
120
100
60
20
0
20
0
2
6
10
14 16 18
40
80
140
4
8
12
80 80 t2.0
160 160 t4.0
120 120 t3.0
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
: MOUNTING ON FIN
WITH GREASE
: MICA PLATE
WITH GREASE
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
NATURAL
CONVECTION
6
6
6
6V
6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
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