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Электронный компонент: BCR20E

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21.BCR20{A,B,C,E}.pm5j www.docs.chipfind.ru
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Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
APPLICATION
Contactless AC switches, light dimmer,
on/off control of traffic signals, on/off control of copier lamps, microwave ovens,
solid state relay
BCR20A, BCR20B, BCR20C, BCR20E
V
1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Conditions
Unit
A
A
A
2
s
W
W
V
A
C
C
Ratings
20
220
203
5.0
0.5
10
2.0
20 ~ +125
20 ~ +125
Commercial frequency, sine full
wave, 360
conduction
BCR20A, B, C
BCR20E
T
c
=98
C
T
b
=64
C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
I
T (RMS)
...................................................................... 20A
V
DRM
..............................................................400V/500V
I
FGT
!
, I
RGT
!
, I
RGT
#
........................................... 30mA
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V
1
Non-repetitive peak off-state voltage
V
1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
600
12
500
700
2
1
3
2.0 MIN
1
3
3 MAX
8.7 MAX
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
OUTLINE DRAWING
Dimensions
in mm
BCR20A
11 MAX
9 MAX
24 MAX
17.5 MAX
2
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Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Conditions
BCR20A
BCR20B
BCR20C
BCR20E
BCR20A only, 10 sec.
BCR20C only
BCR20E only, T
a
=25
C, AC 1 minute, T
2
terminal to base
Symbol
--
--
--
V
iso
Parameter
Weight (Typical value)
Soldering temperature
Mounting torque
Isolated voltage
Ratings
3.5
9.0
9.0
11
230
30
2.94
1500
Unit
g
C
kgcm
Nm
V
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
R
th (j-b)
(dv/dt)
c
Test conditions
T
j
=125
C, V
DRM
applied
T
c
=25
C, T
b
=25
C (BCR20E only), I
TM
=30A, Instantaneous
measurement
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to case (BCR20A, BCR20B, BCR20C)
Junction to base (BCR20E)
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
C/W
V/
s
Typ.
--
--
--
--
--
--
--
--
--
--
--
--
!
@
#
!
@
#
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
V
2
Gate trigger current
V
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
V
2. Measurement using the gate trigger characteristics measurement circuit.
V
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Limits
Min.
--
--
--
--
--
--
--
--
0.2
--
--
V
3
Max.
3.0
1.5
1.5
1.5
1.5
30
30
30
--
1.1
2.4
--
Test conditions
Voltage
class
8
10
V
DRM
(V)
400
600
Min.
--
10
--
10
Commutating voltage and current waveforms
(inductive load)
(dv/dt)
c
Symbol
R
L
R
L
Unit
V/
s
1. Junction temperature
T
j
=125
C
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=10A/ms
3. Peak off-state voltage
V
D
=400V
ELECTRICAL CHARACTERISTICS
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
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Feb.1999
1
2
3
5.3 MAX
(
16)
230.2
33 MAX
2-
3.2 MIN
20 MAX
21 MAX
2.5 MIN
2.0 MIN
1
2
3
8.7 MAX
1.8 MAX
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
OUTLINE DRAWING
Dimensions
in mm
BCR20B
BCR20E
BCR20C
(16.2)
1
2
3
1.9 MIN
10 MAX
2.0 MIN
M6
1. 0
14
8.7 MAX
3 MIN
1
2
3
8.7 MAX
1.8 MAX
2-
3.2 MIN
230.2
33 MAX
20 MAX
2.0 MIN
19 MAX
10.5 MAX
25.5 MAX
19.5 MAX
21 MAX
11 MAX
22.5 MAX
12 MAX
26 MAX
22 MAX
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
4.4
0.4
1.2
2.0
2.8
3.6
0.8
1.6
2.4
3.2
4.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
C
= 25C
T
b
= 25C
10
0
2 3
5 7 10
1
80
40
2 3
5 7 10
2
4
4
120
160
320
200
240
280
0
10
0
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
3
2
10
1
7
5
3
2
7
5
7
5
3
2
10
1
V
GD
= 0.2V
P
GM
= 5.0W
P
G(AV)
= 0.5W
V
GM
= 10V
V
GT
= 1.5V
I
GM
= 2A
I
FGT I,
I
RGT I,
I
RGT III
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
200
160
120
80
40
180
140
100
60
20
0
160
60
20
40
0
20 40
80 100 120 140
TEST PROCEDURE
,
AND
GATE TRIGGER CURRENT
GATE TRIGGER
VOLTAGE
GATE TRIGGER CURRENTVOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT VOLTAGE
( T
j
= t

C
)
GATE TRIGGER CURRENT VOLTAGE
( T
j
= 25
C
)
PERFORMANCE CURVES
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Feb.1999
2 3
10
1
5 7 10
0
2 3 5
2 3
10
2
5 7 10
3
7 10
1
2 3 5 7 10
2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
2.4
2.0
1.6
1.2
0.8
0.4
0
2.8
3.2
2 3
10
2
5 7 10
3
2 3 5 7 10
4
2 3 5 7 10
5
160
120
100
60
20
0
32
0
4
16
24
28
40
80
140
8
12
20
80 80 t2.0
160 160 t4.0
120 120 t3.0
ALL FINS ARE
BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
NATURAL CONVECTION
: MOUNTING ON FIN
WITH SOLDER
: MOUNTING PLATE
WITHOUT GREASE
50
30
25
15
5
0
32
0
8
16
24
28
10
20
35
40
45
4
12
20
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
32
0
4
16
24
28
40
80
140
8
12
20
BCR20A, BCR20B,
BCR20C
BCR20E
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
160
120
100
60
20
0
32
0
4
16
24
28
40
80
140
8
12
20
80 80 t2.0
160 160 t4.0
120 120 t3.0
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
NATURAL
CONVECTION
: MOUNTING ON FIN
WITHOUT GREASE
: INSULATED PLATE
WITH GREASE
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO BASE) (BCR20E)
TRANSIENT THERMAL IMPEDANCE (C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE) (BCR20A, B, C)
TRANSIENT THERMAL IMPEDANCE (C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20A)
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20B)
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
BASE TEMPERATURE (C)
CASE TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
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Feb.1999
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20C)
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20E)
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
160
120
100
60
20
0
32
0
4
16
24
28
40
80
140
8
12
20
80 80 t2.0
160 160 t4.0
120 120 t3.0
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
RESISTIVE, INDUCTIVE LOADS
NATURAL CONVECTION
160
120
100
60
20
0
32
0
4
16
24
28
40
80
140
8
12
20
80 80 t2.0
160 160 t4.0
120 120 t3.0
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
NATURAL
CONVECTION
: MOUNTING ON FIN
WITHOUT GREASE
: MICA PLATE
WITH GREASE
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
6
6
6
6V
6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS