Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR30GM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
APPLICATION
Contactless AC switches, light dimmer,
on/off and speed control of small induction motors, on/off control of copier lamps,
microwave ovens
BCR30GM
I
T (RMS)
...................................................................... 30A
V
DRM
..............................................................400V/600V
I
FGT
!
, I
RGT
!
, I
RGT
#
........................................... 50mA
V
iso
........................................................................ 2200V
UL Recognized: File No. E80276
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
--
--
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mounting torque
Weight
Isolation voltage
Conditions
Commercial frequency, sine full wave 360
conduction,
T
b
=60
C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Screw M4
Typical value
T
a
=25
C, AC 1 minute, T
2
T
1
G terminal to base
Unit
A
A
A
2
s
W
W
V
A
C
C
kgcm
Ncm
g
V
Ratings
30
300
375
5
0.5
10
2
40 ~ +125
40 ~ +125
15
1.47
26
2200
V
1. Gate open.
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V
1
Non-repetitive peak off-state voltage
V
1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
20.2 MAX
39.2 MAX
2-
4.2
2
5.0 MIN
20.1 MAX
1
3
21.6 MAX
30.00.2
23.0MAX
2
1
3
7.0
7.0
1.55(G)
8.25
6.35
2.0(T
1
,T
2
)
7.95
1.5
T
1
TERMINAL
INDICATION
TRADEMARK
3-
1.3
TYPE
NAME
Tb TEST POINT
LOT No.
2.6
6.35
9.75
VOLTAGE
CLASS
11 MAX
22.5 MAX
GATE
TERMINAL
INDICATION
OUTLINE DRAWING
Dimensions
in mm
BCR30GM (C TYPE)
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR30GM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
V
2. Measurement using the gate trigger characteristics measurement circuit.
V
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V
4. The contact thermal resistance R
th (b-f)
in case of greasing is 0.5
C/W.
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-b)
(dv/dt)
c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
V
2
Gate trigger current
V
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
T
j
=125
C, V
DRM
applied
T
b
=25
C, I
TM
=45A, Instantaneous measurement
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to base
V
4
Unit
mA
V
V
V
V
mA
mA
mA
V
C/ W
V/
s
Typ.
--
--
--
--
--
--
--
--
--
--
--
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Test conditions
Voltage
class
8
12
V
DRM
(V)
400
600
Min.
--
20
--
20
Commutating voltage and current waveforms
(inductive load)
(dv/dt)
c
Symbol
R
L
R
L
Unit
V/
s
1. Junction temperature
T
j
=125
C
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=16A/ms
3. Peak off-state voltage
V
D
=400V
Limits
Min.
--
--
--
--
--
--
--
--
0.2
--
V
3
Max.
3.0
1.6
2.5
2.5
2.5
50
50
50
--
1.6
--
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
10
0
2 3
5 7 10
1
200
100
2 3
5 7 10
2
4
4
300
400
500
0
4.4
2.4
0.8
0.4
1.2 1.6 2.0
2.8 3.2 3.6 4.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
C
=
25C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
Feb.1999
10
2
0.2
0.4
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2 3
10
2
5 7 10
3
0
10
0
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
V
GT
= 2.5V
V
GM
= 10V
I
FGT I,
I
RGT I,
I
RGT III
V
GD
= 0.2V
P
G(AV)
=
0.5W
P
GM
= 5W
I
GM
= 2A
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
TYPICAL EXAMPLE
30
20
50
0
10
40
50
40
30
20
10
0
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
160
120
100
60
20
0
40
0
40
80
140
10
20
30
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= tC)
GATE TRIGGER CURRENT (T
j
= 25C)
100 (%)
GATE TRIGGER VOLTAGE
( T
j
= t
C
)
GATE TRIGGER VOLTAGE
( T
j
= 25
C
)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR30GM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
Feb.1999
60
40
20
140
60 40 20 0
80 100 120
10
1
10
3
7
5
3
2
10
2
7
5
3
2
4
4
TYPICAL EXAMPLE
40
60
40
20
160
120
100
60
20
0
140
60
80
140
40 20 0
80 100 120
TYPICAL EXAMPLE
140
40
40
60
20 0
20
60 80 100 120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
TYPICAL EXAMPLE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (C)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/s)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = xV/s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/s
)
160
0
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
80
60
40
20
100
120
140
TYPICAL EXAMPLE
T
j
= 125C
I QUADRANT
III QUADRANT
10
0
10
2
7
5
3
2
10
1
2 3
5 7 10
2
10
1
7
5
3
2
2 3
5 7 10
3
4
4
4
4
TYPICAL
EXAMPLE
T
C
= 125C
I
T
= 4A
= 500s
V
D
= 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
160
120
100
60
20
0
40
0
40
80
140
10
20
30
160 160 t3.0
80 80 t4.0
120 120 t3.0
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
NATURAL CONVECTION
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
100 (%)
HOLDING CURRENT
( T
j
= t
C
)
HOLDING CURRENT
( T
j
= 25
C
)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= t
C
)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= 25
C
)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
= 25
C
)
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR30GM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
Feb.1999
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
10
1
10
3
7
5
3
2
10
0
2 3
5 7 10
1
10
2
7
5
3
2
2 3
5 7 10
2
4
4
4
4
I
FGT I
I
RGT I
I
RGT III
TYPICAL EXAMPLE
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR30GM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
6
6
6
6V
6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
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