/home/web/doc/html/mitsubishi/211394
Mar. 2002
Measurement point of
case temperature
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
15
0.3
14
0.5
10
0.3
2.8
0.2
3.2
0.2
1.1
0.2
1.1
0.2
0.75
0.15
2.54
0.25
2.54
0.25
2.6
0.2
4.5
0.2
0.75
0.15
3
0.3
3.6
0.3
6.5
0.3
E
BCR3KM
OUTLINE DRAWING
Dimensions in mm
TO-220FN
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Control of heater such as electric rice cooker, electric pot
q
I
T (RMS)
.................................................................. 3A
q
V
DRM
................................................................. 600V
q
I
FGT
!
, I
RGT
!
, I
RGT
#
................... 15mA (10mA)
3
q
UL Recognized: Yellow Card No.E80276(N)
File No. E80271
1. Gate open.
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
--
V
iso
Symbol
A
A
A
2
s
W
W
V
A
C
C
g
V
3
30
3.7
3
0.3
6
0.5
40 ~ +125
40 ~ +125
2.0
2000
Symbol
V
V
MAXIMUM RATINGS
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
V
DRM
V
DSM
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Parameter
Parameter
Voltage class
Unit
Ratings
Unit
Conditions
Commercial frequency, sine full wave 360
conduction, Tc=111
C
60Hz sinewave 1 full cycle, peak value, non-repetitive
T
a
=25
C, AC 1 minute, T
1
T
2
G terminal to case
Repetitive peak off-state voltage
1
Non-repetitive peak off-state voltage
1
12
600
720
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
Mar. 2002
2. Measurement using the gate trigger characteristics measurement circuit.
3. High sensitivity (I
GT
10mA) is also available. (I
GT
item
)
4. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5
C/W.
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
R
th (j-a)
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=4.5A, Instantaneous measurement
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to case
4
Junction to ambient
Unit
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
2
Gate trigger current
2
Gate non-trigger voltage
Thermal resistance
Thermal resistance
Limits
Max.
2.0
1.5
1.5
1.5
1.5
15
3
15
3
15
3
--
4.0
50
!
@
#
!
@
#
Typ.
--
--
--
--
--
--
--
--
--
--
--
Min.
--
--
--
--
--
--
--
--
0.2
--
--
mA
V
V
V
V
mA
mA
mA
V
C/ W
C/ W
Symbol
Parameter
Test conditions
ELECTRICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
PERFORMANCE CURVES
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
3.8
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
T
j
= 25
C
10
0
2 3
5 7 10
1
2 3
5 7 10
2
4
4
30
35
20
25
10
15
5
40
0
MAXIMUM ON-STATE
CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
10
1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
0
2
10
1
3
5 7
2
10
2
3
5 7
2
10
3
3
5 7
I
GM
=
0.5A
V
GT
I
RGT
I
P
GM
= 3W
P
G(AV)
= 0.3W
I
FGT
I
, I
RGT III
V
GD
= 0.2V
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
I
RGT
III
I
FGT
I
, I
RGT I
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
4.0
4.5
5.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2 3
10
2
5 7 10
3
2 3 5 7
10
2
2
10
3
3
5 7
2
10
4
3
5 7
2
10
5
3
5 7
10
0
10
1
2
3
4
5
7
10
2
2
3
4
5
7
0
1.0
2.0
3.0
4.0
5.0
4.5
3.5
2.5
1.5
0.5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE VOLTAGE (V)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
GATE TRIGGER CURRENT
(T
j
=
t
C
)
GATE TRIGGER CURRENT
(T
j
=
25
C
)
TYPICAL EXAMPLE
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
GATE TRIGGER VOLTAGE
(T
j
=
t
C
)
GATE TRIGGER VOLTAGE
(T
j
=
25
C
)
TYPICAL EXAMPLE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (
C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE (
C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
GATE CHARACTERISTICS
(
,
AND
)
GATE CURRENT (mA)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
160
120
100
60
20
0
4.0
0
0.5
1.5
2.5
3.5
40
80
140
1.0
2.0
3.0
0
20
40
60
80
100
120
140
160
0
2
4
6
8
1
3
5
7
100 100 t2.3
120 120 t2.3
60 60 t2.3
0
20
40
60
80
100
120
140
160
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
10
2
10
3
2
3
5
7
10
4
2
3
5
7
10
5
2
3
5
7
60
20
20
60
100
140
40
0
40
80
120
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
60 40
0
40
80
120
20
20
60
100
140
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
60
20
20
60
100
140
40
0
40
80
120
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (
C)
RMS ON-STATE CURRENT (A)
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
360
CONDUCTION RESISTIVE,
INDUCTIVE LOADS
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (
C)
RMS ON-STATE CURRENT (A)
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE LOADS
NATURAL CONVECTION
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (
C)
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT
(T
j
=
t
C
)
REPETITIVE PEAK OFF-STATE CURRENT
(T
j
=
25
C
)
TYPICAL EXAMPLE
JUNCTION TEMPERATURE (
C)
100 (%)
HOLDING CURRENT
(T
j
=
t
C
)
HOLDING CURRENT
(T
j
=
25
C
)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
T
2
+
, G
+
T
2
, G
TYPICAL
EXAMPLE
T
2
+
, G
TYPICAL
EXAMPLE
DISTRIBUTION
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (
C)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
10
0
10
1
2
3 4 5
7
10
2
2
3 4 5
7
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
I
FGT I
I
RGT I
I
RGT III
160
100
80
40
20
0
140
40
40
60
20 0
20
60 80
140
100 120
60
120
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
120
0
20
40
60
80
100
140
160
TYPICAL EXAMPLE
TYPICAL EXAMPLE
I QUADRANT
III QUADRANT
T
j
= 125
C
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
BREAKOVER VOLTAGE
(T
j
=
t
C
)
BREAKOVER VOLTAGE
(T
j
=
25
C
)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = xV/
s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/
s
)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (
s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
6
6
6
6V
6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE
1
TEST PROCEDURE
3
TEST PROCEDURE
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
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