Feb.1999
N
CIRCUIT DIAGRAM
E
R
S
A
K
P1
GU
GU
EU
U
GV
GV
EV
V
GW
GW
EW
W
TERMINAL
MAIN CIRCUIT
t = 0.5
1
2
(30)
TERMINAL
CONTROL CIRCUIT
t = 0.5
0.8
MARKING(PRODUCT'S NAME AND LOT NUMBER)
LABEL
GW
NOT CONNECTED
E
GV
GU
EW
GW
EV
GV
GU
EU
NOT CONNECTED
P1
K
R
S
A
U
V
W
N
5
32
8
8 12.5 12.5 8
8
80
0.3
90
0.5
9
0.1
64
0.5
53
0.5
26.5
0.3
26.5
0.3
9
0.1
16.5
54
2.54
2.54
2.54
2.54
7.62
2.54
7.62
2.54
7.62
2.54
12.28
8
8
7.5
8
2-
4.8
0.2
2-
4.8
0.1
MOUNTING HOLES
5.3
+1.0
0.5
5
+1.0
0.5
Note. Not use the guiding holes to mount on the cooling fin.
CM15MD3-12H
APPLICATION
AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics, UPS
MITSUBISHI IGBT MODULES
CM15MD3-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
I
C .....................................................................
15A
V
CES ............................................................
600V
Insulated Type
CIB Module
3
Inverter+1
Converter
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Feb.1999
MITSUBISHI IGBT MODULES
CM15MD3-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
MAXIMUM RATINGS
(T
j
= 25
C)
INVERTER PART
CONVERTER PART
COMMON RATING
Collector-emitter voltage
Gate-emitter voltage
Collector Current
Emitter Current
Maximum collector dissipation
600
20
15
30
15
30
45
G E Short
C E Short
T
C
= 25
C
PULSE
(Note. 2)
T
C
= 25
C
PULSE
(Note. 2)
T
f
= 25
C
Symbol
Parameter
Condition
Unit
Rating
V
V
A
A
A
A
W
V
CES
V
GES
I
C
I
CM
I
E (Note. 1)
I
EM (Note. 1)
P
C (Note. 3)
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I
2
t for fusing
800
220
15
300
375
1
rectifying circuit T
f
= 100
C
1 cycle at 60Hz, peak value Non-repetitive
Value for one cycle of surge current
Symbol
Parameter
Condition
Unit
Rating
V
V
A
A
A
2
s
V
RRM
E
a
I
O
I
FSM
I
2
t
T
j
T
stg
V
iso
--
--
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
40 ~ +150
40 ~ +125
2500
1.47 ~ 1.96
60
AC 1 min.
Mounting M4 screw
Typical value
Symbol
Parameter
Condition
Unit
Rating
C
C
V
N
.
m
g
Feb.1999
MITSUBISHI IGBT MODULES
CM15MD3-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(T
j
= 25
C)
INVERTER PART
CONVERTER PART
Note 1. I
E
, V
EC
, t
rr,
Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Thermal resistance is specified under following conditions.
The conductive greese applied, between module and fin.
Al plate is used as fin.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
V
V
1
0.5
2.8
--
1.5
1.2
0.3
--
120
300
200
300
2.8
110
--
2.8
3.5
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
C
T
j
= 150
C
V
CC
= 300V, I
C
= 15A, V
GE
= 15V
V
CC
= 300V, I
C
= 15A
V
GE1
= V
GE2
= 15V
R
G
= 42
Resistive load
I
E
= 15A, V
GE
= 0V
I
E
= 15A, V
GE
= 0V
di
e
/ dt = 30A /
s
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
mA
A
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
C
C/W
C/W
--
--
2.1
2.15
--
--
--
45
--
--
--
--
--
--
0.04
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d (on)
t
r
t
d (off)
t
f
V
EC (Note. 1)
t
rr
(Note. 1)
Q
rr
(Note. 1)
R
th(j-f)
Q
(Note. 5)
R
th(j-f)
R
(Note. 5)
Symbol
Parameter
Test conditions
V
GE(th)
V
CE(sat)
Limits
Min.
Typ.
Max.
Unit
6
4.5
7.5
I
C
= 1.5mA, V
CE
= 10V
I
C
= 15A, V
GE
= 15V
(Note. 4)
V
CE
= 10V
V
GE
= 0V
Repetitive reverse current
Forward voltage drop
Thermal resistance
V
R
= V
RRM
, T
j
= 150
C
I
F
= 25A
Per 1/4 module
mA
V
C/W
--
--
--
--
--
--
I
RRM
V
FM
R
th(j-f)
(Note. 5)
Symbol
Parameter
Condition
Limits
Min.
Typ.
Max.
Unit
8
1.6
3.6
Feb.1999
30
24
18
12
6
0
20
10
2
0
4
6
8
12 14 16 18
V
CE
= 10V
T
j
= 25
C
T
j
= 125
C
5
4
3
2
1
0
30
0
6
12
18
24
T
j
= 25
C
T
j
= 125
C
V
GE
= 15V
10
0
10
2
7
5
3
2
0
0.8
1.6
10
1
7
5
3
2
2.4
3.2
4.0
T
j
= 25
C
30
24
18
12
6
0
10
5
1
0
2
3
4
6
7
8
9
V
GE
=20
(V)
T
j
=25
C
9
15
12
11
10
8 7
10
8
6
4
2
0
20
10
2
0
4
6
8
12 14 16 18
9
7
5
3
1
T
j
= 25
C
I
C
= 30A
I
C
= 15A
I
C
= 6A
10
1
2 3
10
1
5 7
10
0
2 3
5 7
10
1
2 3
5 7
10
2
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
2
C
ies
V
GE
= 0V
C
oes
C
res
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISITICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE VS. V
CE
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
MITSUBISHI IGBT MODULES
CM15MD3-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
PERFORMANCE CURVES
Feb.1999
10
1
10
3
10
5
10
4
10
0
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
3
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
1
10
2
10
1
10
0
10
3
10
3
7
5
3
2
10
2
7
5
3
2
10
1
3
2
2 3 5 7
2 3 5 7
Single Pulse
T
f
= 25C
R
th(j f)
= 2.8C/ W
10
1
10
3
10
5
10
4
10
0
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
3
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
1
10
2
10
1
10
0
10
3
10
3
7
5
3
2
10
2
7
5
3
2
10
1
3
2
2 3 5 7
2 3 5 7
Single Pulse
T
f
= 25C
R
th(j f)
= 3.5C/ W
10
1
10
3
7
5
3
2
10
0
2
3
5 7
10
1
10
2
7
5
3
2
2
3
5 7
10
2
t
d(off)
V
CC
= 300V
V
GE
= 15V
R
G
= 42
T
j
= 125C
t
d(on)
t
f
t
r
10
1
10
3
7
5
3
2
10
0
2
3
5 7
10
1
10
2
7
5
3
2
2
3
5 7
10
2
10
1
10
1
7
5
3
2
10
0
7
5
3
2
di/dt = 30A / s
T
j
= 25C
t
rr
I
rr
20
16
12
8
4
0
60
50
10
0
20
30
40
18
14
10
6
2
V
CC
= 200V
V
CC
= 300V
I
C
= 15A
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (
j
f)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES (ns)
COLLECTOR CURRENT I
C
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(ns)
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (
j
f)
TIME (s)
TIME (s)
V
GE
GATE CHARGE
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
REVERSE RECOVERY CURRENT l
rr
(A)
MITSUBISHI IGBT MODULES
CM15MD3-12H
MEDIUM POWER SWITCHING USE
FLAT-BASE TYPE, INSULATED TYPE
PDF 
ZIP