Sep.1998
Dimensions
Inches
Millimeters
A
4.25
108.0
B
3.66
0.01
93.0
0.25
C
2.44
62.0
D
1.89
0.01
48.0
0.25
E
1.22 Max.
31.0 Max.
F
0.98
25.0
G
0.85
21.5
H
0.60
15.2
Dimensions
Inches
Millimeters
J
0.59
15.0
K
0.55
14.0
L
0.30
8.5
M
0.28
7.0
N
0.256 Dia.
Dia. 6.5
P
0.24
6.0
Q
M6 Metric
M6
R
0.20
5.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM200DY-24H
is a 1200V (V
CES
), 200 Ampere
Dual IGBT Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
200
24
MITSUBISHI IGBT MODULES
CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
A
B
F
F
G
D
C
K
J
P
P
R
C2E1
C1
E2
G1
N - DIA.
(4 TYP.)
E1
E2
G2
Q - M6 THD
(3 TYP.)
M
M
E
M
H
L
E1
C1
E2
TAB#110 t=0.5
G1
E2
G2
C2E1
Sep.1998
Absolute Maximum Ratings, T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM200DY-24H
Units
Junction Temperature
T
j
40 to 150
C
Storage Temperature
T
stg
40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
C
= 25
C)
I
C
200
Amperes
Peak Collector Current
I
CM
400*
Amperes
Emitter Current** (T
C
= 25
C)
I
E
200
Amperes
Peak Emitter Current**
I
EM
400*
Amperes
Maximum Collector Dissipation (T
C
= 25
C, T
j
150
C)
P
c
1500
Watts
Mounting Torque, M6 Main Terminal
1.96 ~ 2.94
N m
Mounting Torque, M6 Mounting
1.96 ~ 2.94
N m
Weight
400
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
*Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 20mA, V
CE
= 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 200A, V
GE
= 15V
2.5
3.4**
Volts
I
C
= 200A, V
GE
= 15V, T
j
= 150
C
2.25
Volts
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 200A, V
GE
= 15V
1000
nC
Emitter-Collector Voltage
V
EC
I
E
= 200A, V
GE
= 0V
3.5
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
40
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V
14
nF
Reverse Transfer Capacitance
C
res
8
nF
Resistive
Turn-on Delay Time
t
d(on)
250
ns
Load
Rise Time
t
r
V
CC
= 600V, I
C
= 200A,
400
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 1.6
300
ns
Times
Fall Time
t
f
350
ns
Diode Reverse Recovery Time
t
rr
I
E
= 200A, di
E
/dt = 400A/
s
250
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 200A, di
E
/dt = 400A/
s
1.49
C
Thermal and Mechanical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
0.085
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per FWDi
0.18
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.045
C/W
MITSUBISHI IGBT MODULES
CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
240
80
0
V
GE
= 20V
15
12
11
8
7
T
j
= 25
o
C
160
320
400
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
320
240
160
80
0
V
CE
= 10V
T
j
= 25C
T
j
= 125C
400
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
80
160
240
320
4
3
2
1
0
400
V
GE
= 15V
T
j
= 25C
T
j
= 125C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25C
I
C
= 80A
I
C
= 400A
I
C
= 200A
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, I
E
, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
di/dt = -400A/
sec
T
j
= 25C
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
400
800
16
12
8
4
0
1200
1600
V
CC
= 600V
V
CC
= 400V
I
C
= 200A
COLLECTOR CURRENT, I
C
, (AMPERES)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= 15V
R
G
= 1.6
T
j
= 125C
t
f
SWITCHING TIME, (ns)
10
1
10
3
7
5
3
2
1.0
1.5
2.0
10
2
7
5
3
2
2.5
3.0
3.5
T
j
= 25C
MITSUBISHI IGBT MODULES
CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.085
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
t
h
(
j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25
C
Per Unit Base = R
th(j-c)
= 0.18
C/W
Z
th
= R
th
(NORMALIZED VALUE)
10
-1
10
-2
10
-3
MITSUBISHI IGBT MODULES
CM200DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
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