Aug. 1999
CM200TU-12F
P
U
V
W
G
U
P
G
V
P
G
W
P
G
U
N
G
V
N
G
W
N
E
U
N
E
V
N
E
W
N
N
E
U
P
E
V
P
E
W
P
RTC
RTC
RTC
RTC
RTC
RTC
GuN
EuN
GvN
EvN
GwN
EwN
GuP
EuP
GvP
EvP
GwP
EwP
E
G
G
G
G
G
G
E
E
E
E
E
U
V
W
P
N
CM
2.8
7.1
4
12
(4)
12
26
8.1
11
21.7
11
21.7
11
23
0.8
14.4
11
21.7
11
21.7
11
107
12
23
12
12
23
90
0.25
80
0.25
102
48.5
17
3.75
3.75
4
5.5
MOUNTING HOLES
5M5NUTS
LABEL
29
0.5
+1
0.5
CIRCUIT DIAGRAM
Tc measured point
Tc measured point
APPLICATION
General purpose inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM200TU-12F
HIGH POWER SWITCHING USE
I
C ...................................................................
200A
V
CES ............................................................
600V
Insulated Type
6-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
Aug. 1999
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
CES
, V
CE
= 0V
T
j
= 25
C
T
j
= 125
C
V
CC
= 300V, I
C
= 200A, V
GE
= 15V
V
CC
= 300V, I
C
= 200A
V
GE1
= V
GE2
= 15V
R
G
= 3.1
, Inductive load switching operation
I
E
= 200A
I
E
= 200A, V
GE
= 0V
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compoundapplied
*2
(1/6 module)
Tc measured point is just under the chips
I
C
= 20mA, V
CE
= 10V
I
C
= 200A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
600
20
200
400
200
400
590
40 ~ +150
40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
680
MITSUBISHI IGBT MODULES
CM200TU-12F
HIGH POWER SWITCHING USE
V
V
W
C
C
V
N m
N m
g
A
A
1
20
2.2
--
54
3.6
2.0
--
120
100
350
250
150
--
2.6
0.21
0.35
--
0.15
V
3
31
mA
A
nF
nC
C
V
C/W
--
--
1.6
1.6
--
--
--
1240
--
--
--
--
--
3.8
--
--
--
0.09
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
3.1
6
V
V
ns
5
7
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
*1
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c')
Q
R
G
Symbol
Parameter
V
GE(th)
V
CE(sat)
Note 1. I
E
, V
EC
, t
rr
, Q
rr
, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone "G-746".
*
3 : If you use this value, R
th(f-a)
should be measured just under the chips.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
T
C
= 25
C
Pulse
(Note 2)
T
C
= 25
C
Pulse
(Note 2)
T
C
= 25
C
Main terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
Symbol
Parameter
Collector current
Emitter current
Torque strength
Conditions
Unit
Ratings
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
T
j
T
stg
V
iso
--
Unit
Typ.
Limits
Min.
Max.
--
MAXIMUM RATINGS
(Tj = 25
C)
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
Test conditions
Aug. 1999
MITSUBISHI IGBT MODULES
CM200TU-12F
HIGH POWER SWITCHING USE
0.5
1.5
2.5
3.5
1
2
3
4
0
50
100
150
200
250
300
350
400
0
7.5
15
11
8
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
0
0.5
1
1.5
2
2.5
3
3.5
4
10
1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
1
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
2.5
3
2
1.5
1
0.5
0
300
400
0
100
200
5
4
3
2
1
0
16
18
20
6
8
10
12
14
10
0
10
1
2 3
5 7
10
2
2 3
5 7
10
3
2 3
5 7
10
1
10
0
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
I
C
= 400A
I
C
= 200A
I
C
= 80A
T
j
= 25
C
V
CC
= 300V
V
GE
=
15V
R
G
= 3.1
T
j
= 125
C
Conditions:
t
d(off)
t
d(on)
t
f
t
r
9
T
j
=25
C
V
GE
=20V
10
9.5
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
8.5
T
j
= 25
C
C
ies
C
oes
C
res
V
GE
= 0V
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCEV
CE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
SWITCHING TIMES (ns)
COLLECTOR CURRENT I
C
(A)
PERFORMANCE CURVES
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