Sep.1998
Dimensions
Inches
Millimeters
A
4.21
107.0
B
3.661
0.01
93.0
0.25
C
2.44
62.0
D
1.89
0.01
48.0
0.25
E
1.42+0.04/-0.02 36.0+1.0/-0.5
F
1.14
29.0
G
1.02+0.04/-0.2 25.8+1.0/-0.5
H
0.94
24.0
Dimensions
Inches
Millimeters
J
0.79
20.0
K
0.69
17.5
L
0.63
16.0
M
0.35
9.0
N
0.28
7.0
P
0.26 Dia.
Dia. 6.5
Q
M6 Metric
M6
R
M4 Metric
M4
Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module consists
of one IGBT in a single configura-
tion with a reverse-connected su-
per-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM400HA-
24H is a 1200V (V
CES
), 400 Am-
pere Single IGBT Module.
Type
Current Rating
V
CES
Amperes
Volts (x 50)
CM
400
24
Outline Drawing and Circuit Diagram
MITSUBISHI IGBT MODULES
CM400HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
G
E
N
E
C
E
G
M
A
B
K
F
J
H
J
D
C
L
Q - THD
(2 TYP.)
P - DIA.
(4 TYP.)
R - THD
(2 TYP.)
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM600HU-12H
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
c
= 25
C)
I
C
400
Amperes
Peak Collector Current (T
j
150
C)
I
CM
800*
Amperes
Emitter Current** (T
c
= 25
C)
I
E
400
Amperes
Peak Emitter Current**
I
EM
800*
Amperes
Maximum Collector Dissipation (T
c
= 25
C)
P
c
2800
Watts
Mounting Torque, M6 Main Terminal
1.96~2.94
N m
Mounting Torque, M6 Mounting
1.96~2.94
N m
Mounting Torque, M4 Terminal
0.98~1.47
N m
Weight
400
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).s not exceed T
j(max)
rating.
Static Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
2.0
mA
Gate Leakage Current
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 40mA, V
CE
= 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 400A, V
GE
= 15V
2.5
3.4**
Volts
I
C
= 400A, V
GE
= 15V, T
j
= 150
C
2.25
Volts
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 400A, V
GE
= 15V
2000
nC
Emitter-Collector Voltage
V
EC
I
E
= 400A, V
GE
= 0V
3.4
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
80
nF
Output Capacitance
C
oes
V
GE
= 0V, V
CE
= 10V
28
nF
Reverse Transfer Capacitance
C
res
16
nF
Resistive
Turn-on Delay Time
t
d(on)
300
ns
Load
Rise Time
t
r
V
CC
= 600V, I
C
= 400A
500
ns
Switching
Turn-off Delay Time
t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 0.78
350
ns
Times
Fall Time
t
f
350
ns
Diode Reverse Recovery Time
t
rr
I
E
= 400A, di
E
/dt = 800A/
s
250
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 400A, di
E
/dt = 800A/
s
2.97
C
Thermal and Mechanical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Per IGBT
0.045
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
Per FWDi
0.09
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.040
C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
480
160
0
V
GE
= 20V
15
12
11
8
7
T
j
= 25
o
C
320
640
800
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
640
480
320
160
0
800
V
CE
= 10V
T
j
= 25C
T
j
= 125C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
160
320
480
800
4
3
2
1
0
V
GE
= 15V
T
j
= 25C
T
j
= 125C
640
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25C
I
C
= 160A
I
C
= 800A
I
C
= 400A
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT, I
E
, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
3
10
2
10
1
10
0
V
GE
= 0V
10
1
C
ies
C
oes
C
res
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= 15V
R
G
= 0.78
T
j
= 125C
t
f
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
1
10
2
10
3
10
2
10
1
t
rr
I
rr
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
di/dt = -800A/
sec
T
j
= 25C
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
800
1600
2400
16
12
8
4
0
3200
I
C
= 400A
V
CC
= 600V
V
CC
= 400V
10
3
7
5
3
2
1.0
1.5
2.0
10
2
7
5
3
2
2.5
3.0
3.5
2
T
j
= 25C
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