Mar. 2004
G2
G1
E2
E1
C1
E2
C2E1
LABEL
TAB #110. t=0.5
14
14
14
(20.5)
21.5
25
25
6
15
6
4
18
7
18
7
18
30
29
+1.0
0.5
8.5
21.2
93
0.25
110
62
0.25
80
3-M6 NUTS
4-
6.5 MOUNTING HOLES
C2E1
E2
E2
G2
G1
E1
C1
CIRCUIT DIAGRAM
CM600DY-24A
APPLICATION
AC drive inverters & Servo controls, etc
MITSUBISHI IGBT MODULES
CM600DY-24A
HIGH POWER SWITCHING USE
I
C ...................................................................
600A
V
CES .........................................................
1200V
Insulated Type
2-elements in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
CM600DY-24A
04.2.19, 9:21 PM
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V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
T
j
= 25
C
T
j
= 125
C
V
CC
= 600V, I
C
= 600A, V
GE
= 15V
V
CC
= 600V, I
C
= 600A
V
GE1
= V
GE2
= 15V
R
G
= 0.52
, Inductive load switching operation
I
E
= 600A
I
E
= 600A, V
GE
= 0V
IGBT part (1/2 module)
*1
FWDi part (1/2 module)
*1
Case to fin, Thermal compound Applied (1/2 module)
*2
I
C
= 60mA, V
CE
= 10V
I
C
= 600A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
1200
20
600
1200
600
1200
3670
40 ~ +150
40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
580
MITSUBISHI IGBT MODULES
CM600DY-24A
HIGH POWER SWITCHING USE
V
V
A
A
W
C
C
V
N m
g
1
0.5
3.0
--
94
8
1.8
--
660
190
700
350
250
--
3.8
0.034
0.062
--
7.8
mA
A
nF
nC
ns
C
V
C/W
--
--
2.1
2.4
--
--
--
2700
--
--
--
--
--
19
--
--
--
0.018
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.52
7
V
V
6
8
ns
I
CES
I
GES
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
G
Symbol
Parameter
V
GE(th)
V
CE(sat)
*
1 : Tc, Tf measured point is just under the chips.
*
2 : Typical value is measured by using Shin-etsu Silicone "G-746".
Note 1. I
E
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150
C.
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
G-E Short
C-E Short
DC, T
C
= 78
C
*1
Pulse
(Note 2)
Pulse
(Note 2)
T
C
= 25
C
*1
Main terminal to base plate, AC 1 min.
Main terminal M6
Mounting holes M6
Typical value
Symbol
Parameter
Collector current
Emitter current
Torque strength
Conditions
Unit
Ratings
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
T
j
T
stg
V
iso
--
--
--
Unit
Typ.
Limits
Min.
Max.
Test conditions
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
ABSOLUTE MAXIMUM RATINGS
(Tj = 25
C)
Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
External gate resistance
Thermal resistance
CM600DY-24A
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MITSUBISHI IGBT MODULES
CM600DY-24A
HIGH POWER SWITCHING USE
1200
1000
400
200
800
600
0
0
4
6
8
10
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
T
j
= 25
C
11
12
10
9
V
GE
=
20V
2
15
13
4
3
2
1
0
0
400
1200
800
1000
600
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
V
GE
= 15V
T
j
= 25
C
T
j
= 125
C
200
10
8
6
4
2
0
20
12
14
6
8
10
16
18
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
T
j
= 25
C
I
C
= 1200A
I
C
= 240A
I
C
= 600A
2
3
5
7
2
3
5
7
2
3
5
7
0
1
2
4
3
5
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT I
E
(A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
T
j
= 25
C
T
j
= 125
C
10
1
10
1
10
0
10
1
10
2
10
3
2
3
5
7
7
7
2
3
5
2
3
5
2
3
5
7
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
CAPACITANCEV
CE
CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
C
ies
C
oes
C
res
V
GE
= 0V
10
1
10
2
10
3
2
3
5
7
2
3
5
7
10
1
10
2
10
3
10
4
10
1
10
2
5
7
10
3
2
3
5
7
2
3
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIME (ns)
COLLECTOR CURRENT I
C
(A)
Conditions:
V
CC
= 600V
V
GE
=
15V
R
G
= 0.52
T
j
= 125
C
Inductive load
t
d(off)
t
d(on)
t
f
t
r
PERFORMANCE CURVES
CM600DY-24A
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MITSUBISHI IGBT MODULES
CM600DY-24A
HIGH POWER SWITCHING USE
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
rr
I
rr
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
Conditions:
V
CC
= 600V
V
GE
=
15V
R
G
= 0.52
T
j
= 25
C
Inductive load
10
3
10
2
10
1
10
5
10
4
10
0
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
3
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
1
10
2
10
1
10
0
10
3
10
3
7
5
3
2
10
2
7
5
3
2
10
1
2 3 5 7
2 3 5 7
Single Pulse
T
C'
= 25
C
Under the chip
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (
j
c
'
)
(ratio)
TIME (s)
IGBT part:
Per unit base =
R
th(jc)
= 0.034
C/W
FWDi part:
Per unit base =
R
th(jc)
= 0.062
C/W
10
0
2
3
5
7
2
3
5
7
10
1
10
2
5
7
10
3
2
3
5
7
2
3
RECOVERY LOSS vs. I
E
(TYPICAL)
RECOVERY LOSS (mJ/pulse)
EMITTER CURRENT I
E
(A)
Conditions:
V
CC
= 600V
V
GE
=
15V
R
G
= 0.52
T
j
= 125
C
Inductive load
C snubber at bus
Err
10
3
10
2
10
1
2
3
5
7
2
3
5
7
10
1
10
2
5
7
10
3
2
3
5
7
2
3
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (mJ/pulse)
COLLECTOR CURRENT I
C
(A)
Conditions:
V
CC
= 600V
V
GE
=
15V
R
G
= 0.52
T
j
= 125
C
Inductive load
C snubber at bus
Esw(off)
Esw(on)
10
2
10
1
10
0
2
3
5
7
2
3
5
7
10
1
10
0
5
7
10
1
2
3
5
7
2
3
RECOVERY LOSS vs.
GATE RESISTANCE
(TYPICAL)
RECOVERY LOSS (mJ/pulse)
GATE RESISTANCE R
G
(
)
Conditions:
V
CC
= 600V
V
GE
=
15V
I
E
= 600A
T
j
= 125
C
Inductive load
C snubber at bus
Err
10
3
10
2
10
1
2
3
5
7
2
3
5
7
10
1
10
0
10
1
2
3
5
7
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS (mJ/pulse)
GATE RESISTANCE R
G
(
)
Conditions:
V
CC
= 600V
V
GE
=
15V
I
C
= 600A
T
j
= 125
C
Inductive load
C snubber at bus
Esw(on)
Esw(off)
5
7
2
3
CM600DY-24A
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