Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90SA-6
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
Welders
TM90SA-6
I
T (AV)
Average on-state current ............ 90A
V
RRM
Repetitive peak reverse voltage
................ 300V
V
DRM
Repetitive peak off-state voltage
................ 300V
TRIPLE ARMS
Non-Insulated Type
3
6
7
18
20
20
1
2
6.5
K
1
G
1
K
2
G
2
13
26
80
93.5
G
3
K
3
K
3
K
2
K
1
A
Tab#110,
t=0.5
4
2.2
6.5
19
9
41
56
K
3
G
3
K
2
G
2
K
1
G
1
K
1
K
2
K
3
A
CR
3
CR
2
CR
1
LABEL
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM90SA-6
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
6
300
360
240
300
360
240
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
Nm
kgcm
Nm
kgcm
g
Conditions
Three-phase, half-wave, T
C
=126
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=150
C
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
140
90
1800
1.4
10
4
100
5.0
0.5
10
5.0
2.0
40~150
40~125
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
--
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
s
V
V
mA
C/ W
C/ W
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Test conditions
T
j
=150
C, V
RRM
applied
T
j
=150
C, V
DRM
applied
T
j
=150
C, I
TM
=270A, instantaneous meas.
T
j
=150
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
T
j
=150
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
Junction to case (per 1/3 module)
Case to fin, conductive grease applied (per 1/3 module)
Min.
--
--
--
200
--
0.25
15
--
--
Typ.
--
--
--
--
--
--
--
--
--
Max.
20
20
1.15
--
3.0
--
100
0.2
0.3
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90SA-6
MEDIUM POWER GENERAL USE
NON-INSULATED TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
GA
TE VOL
T
AGE
(V)
SURGE (NON-REPETITIVE)
ON-ST
A
TE CURRENT
(A)
TRANSIENT THERMAL IMPEDANCE
(
C/
W)
CONDUCTION TIME
(CYCLE AT 60Hz)
ON-STATE VOLTAGE
(V)
GATE CURRENT
(mA)
TIME (s)
MAXIMUM AVERAGE ON-STAGE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
AVERAGE ON-STATE CURRENT
(A)
AVERAGE ON-STATE CURRENT
(A)
A
VERAGE ON-ST
A
TE POWER
DISSIP
A
TION
(W)
CASE TEMPERA
TURE
(
C)
ON-ST
A
TE CURRENT
(A)
0
10
1
10
0
10
1
10
2
10
3
10
4
10
3
10
2
10
1
10
1
10
0
10
1
10
4
10
3
10
1
10
2
10
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
100mA
I
FGM
=2.0A
P
GM
=5W
V
FGM
=10V
V
GD
=0.25V
P
FG(AV)
=
0.50W
T
j
=25C
0.4
7
5
3
2
7
5
3
2
7
5
3
2
0.8
1.6
2.4
1.2
2.0
T
j
=150C
70
50
30
20
7
5
3
2
0
250
2000
10
1
100
500
750
1000
1250
1500
1750
7
5
3
2
7
5
3
2
7
5
3
2
0.25
0
7
5
3
2
0.05
3
2
0.10
0.15
0.20
150
100
0
60
100
20
110
40
120
130
140
80
=30
60
90
360
180
120
RESISTIVE,
INDUCTIVE
LOAD
0
0
100
100
20
20
40
60
40
60
80
80
180
=30
120
90
360
60
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
PER SINGLE
ELEMENT
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