Sep.1998
Dimensions
Inches
Millimeters
A
4.21
107.0
B
3.54
0.01
90.0
0.25
C
4.02
102.0
D
3.15
0.01
80.0
0.25
E
0.43
11.0
F
0.91
23.0
G
0.47
12.0
H
0.85
21.7
J
0.91
23.0
Dimensions
Inches
Millimeters
K
0.15
3.75
L
0.67
17.0
M
1.91
48.5
N
0.03
0.8
P
0.32
8.1
Q
1.02
26.0
R
0.22 Dia.
5.5 Dia.
S
0.57
14.4
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM75TU-24H is a
1200V (V
CES
), 75 Ampere Six-
IGBT Module.
Current Rating
V
CES
Type
Amperes
Volts (x 50)
CM
75
24
MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Outline Drawing and Circuit Diagram
u
w
v
T
C
Measured
Point
T
C
Measured
Point
D
C
5 - M5 NUTS
M
L
K
R 4 - Mounting
Holes
K
E
E
G
G
B
F
E
H
H
S
A
GvP
EvP
GuN
EuN
GvN
EvN
GwN
EwN
E
E
E
H
J
H
N
J
TAB#110 t=0.5
P
Q
GuP
EuP
GwP
EwP
GuP
EuP
GuN
EuN
U
P
N
GvP
EvP
GvN
EvN
V
GwP
EwP
GwN
EwN
W
Sep.1998
Absolute Maximum Ratings, T
j
= 25
C unless otherwise specified
Ratings
Symbol
CM75TU-24H
Units
Junction Temperature
T
j
-40 to 150
C
Storage Temperature
T
stg
-40 to 125
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
20
Volts
Collector Current (T
c
= 25
C)
I
C
75
Amperes
Peak Collector Current (T
j
150
C)
I
CM
150*
Amperes
Emitter Current**
I
E
75
Amperes
Peak Emitter Current**
I
EM
150*
Amperes
Maximum Collector Dissipation (T
j
< 150
C)
P
c
600
Watts
Mounting Torque, M5 Main Terminal
2.5~3.5
N m
Mounting Torque, M5 Mounting
2.5~3.5
N m
Weight
680
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1
mA
Gate Leakage Voltage
I
GES
V
GE
= V
GES
, V
CE
= 0V
0.5
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 7.5mA, V
CE
= 10V
4.5
6
7.5
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 75A, V
GE
= 15V, T
j
= 25
C
2.9
3.7
Volts
I
C
= 75A, V
GE
= 15V, T
j
= 125
C
2.85
Volts
Total Gate Charge
Q
G
V
CC
= 600V, I
C
= 75A, V
GE
= 15V
280
nC
Emitter-Collector Voltage*
V
EC
I
E
= 75A, V
GE
= 0V
3.2
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
11
nF
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V
3.7
nF
Reverse Transfer Capacitance
C
res
2.2
nF
Resistive
Turn-on Delay Time
t
d(on)
V
CC
= 600V, I
C
= 75A,
100
ns
Load
Rise Time
t
r
V
GE1
= V
GE2
= 15V,
200
ns
Switch
Turn-off Delay Time
t
d(off)
R
G
= 4.2
, Resistive
250
ns
Times
Fall Time
t
f
Load Switching Operation
350
ns
Diode Reverse Recovery Time
t
rr
I
E
= 75A, di
E
/dt = -150A/
s
300
C
Diode Reverse Recovery Charge
Q
rr
I
E
= 75A, di
E
/dt = -150A/
s
0.41
C
Thermal and Mechanical Characteristics, T
j
= 25
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/6 Module
0.21
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per Free-Wheel Diode 1/6 Module
0.47
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
0.015
C/W
MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Sep.1998
MITSUBISHI IGBT MODULES
CM75TU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0
100
200
16
12
8
4
0
300
400
V
CC
= 600V
V
CC
= 400V
I
C
= 75A
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
rr
I
rr
di/dt = -150A/
sec
T
j
= 25C
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
0
10
1
10
2
10
2
10
1
10
0
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= 15V
R
G
= 4.2
T
j
= 125C
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
10
1
C
ies
C
oes
C
res
1.0
1.5
2.0
2.5
3.5
3.0
4.0
10
0
10
1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25C
I
C
= 30A
I
C
= 150A
I
C
= 75A
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0
25
50
75
100
4
3
2
1
0
150
125
V
GE
= 15V
T
j
= 25C
T
j
= 125C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
4
8
12
16
20
120
90
60
30
0
V
CE
= 10V
T
j
= 25C
T
j
= 125C
150
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
0
V
GE
= 20V
11
8
10
9
T
j
= 25
o
C
25
50
75
100
125
150
12
15
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