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Электронный компонент: CR10C-8

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Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR10C
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR10C
APPLICATION
DC motor control, electric furnace control, static switches, DC supply
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2
t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
--
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mounting torque
Weight
Conditions
Commercial frequency, sine half wave, 180
conduction, T
c
=84
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
V
D
=1/2V
DRM
, I
TM
=30A, I
G
=0.1A. T
j
=25
C, f=60Hz
Typical value
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
kgcm
Ncm
g
Ratings
15.5
10
200
165
100
5.0
0.5
10
5
2
30 ~ +125
30 ~ +125
30
2.94
8.8
MAXIMUM RATINGS
Symbol
V
RRM
V
RSM
V
DRM
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Voltage class
Unit
V
V
V
8
400
500
400
12
600
720
600
16
800
960
800
I
T (AV)
......................................................................... 10A
V
DRM
.................................................... 400V/600V/800V
I
GT
..........................................................................30mA
1
2
1.9 MIN
10 MAX
1
2
3
1
2
3
CATHODE
ANODE
GATE
M6
1
8.7 MAX
3 MIN
19.5 MAX
26 MAX
OUTLINE DRAWING
Dimensions
in mm
LOCK WASHER
SOLDERLESS TERMINAL
NUT
TELEGRAPH WIRE
1.04~2.63mm
2
Note: Mica washer and spacer are
provided only upon request.
(16.2)
3
2.0 MIN
14
11 MIN
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR10C
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=30A, Instantaneous value
T
j
=125
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, I
T
=0.5A
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, I
T
=0.5A
T
c
=25
C, V
D
=100V, I
T
=10A, I
G
=0.1A
Junction to case
Case to fin, greased
Unit
mA
mA
V
V/
s
V
V
mA
s
C/W
C/W
Typ.
--
--
--
--
--
--
--
--
--
--
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
t
gt
R
th (j-c)
R
th (j-c)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical-rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Turn-on time
Thermal resistance
Contact thermal resistance
Limits
Min.
--
--
--
20
--
0.25
--
--
--
--
Max.
3.0
3.0
1.6
--
2.5
--
30
10
2.0
0.55
10
0
2 3
5 7 10
1
80
40
2 3
5 7 10
2
4
4
120
160
200
60
20
100
140
180
0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
c
= 125C
125C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR10C
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
1
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
V
GT
= 2.5V
P
GM
= 5W
V
GD
= 0.25V
V
FGM
= 10V
I
FGM
=
2A
I
GT
T
j
=
125C
25C
30C
P
G(AV)
=
0.5W
2 3
10
4
5 710
3
2 3 5 710
2
2 3 5 710
1
0
0.4
0.8
1.6
2.0
2.4
1.2
2 3
10
1
5 7 10
0
32
24
12
8
4
28
20
16
0
16
0
8
2
4
6
10
12
14
360
= 30
60
120
90
180
RESISTIVE LOADS
10
5
1
0
2
3
4
6
7
8
9
160
120
100
60
20
0
40
80
140
= 30
60
120
90
180
360
RESISTIVE,
INDUCTIVE
LOADS
32
24
12
8
4
28
20
16
0
0
16
8
2
4
6
10
12
14
360
RESISTIVE,
INDUCTIVE
LOADS
= 30
60
120
90
180
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (C/
W)
TIME (s)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
10
5
1
0
2
3
4
6
7
8
9
160
120
100
60
20
0
40
80
140
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
= 90C
180C
ALUMINUM PLATE
PAINTED BLACK
AND GREASED
160 160 t4
120 120 t3
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR10C
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
800
0
600
700
200
300
400
500
100
0.1s
tw
I
T
= 0.5A
I
GT
6V
A
TYPICAL EXAMPLE
16
12
6
4
2
14
10
8
0
0
8
2
4
6
10
12
14
16
= 30
60
120
90
180
270
DC
360
RESISTIVE,
INDUCTIVE
LOADS
20
10
2
0
4
6
8
12 14 16 18
160
120
100
60
20
0
40
80
140
= 30
60 120
180
90
270
DC
360
RESISTIVE,
INDUCTIVE
LOADS
160
120
60
40
20
140
100
80
0
0
20
10
2
4
6
8
12 14 16 18
360
RESISTIVE LOADS
= 30 60
120
90
180
20
10
2
0
4
6
8
12 14 16 18
160
120
100
60
20
0
40
80
140
160 160 t4
120 120 t3
ALUMINUM PLATE
PAINTED BLACK
AND GREASED
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
180
DC
= 90
160
120
60
40
20
140
100
80
0
0
20
10
2
4
6
8
12 14 16 18
360
= 90
180
RESISTIVE
LOADS
NATURAL
CONVECTION
160 160 t4
120 120 t3
ALUMINUM PLATE
PAINTED BLACK
AND GREASED
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE TRIGGER PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)