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Электронный компонент: CR20EY-8

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Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR20EY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR20EY
APPLICATION
Inverter, DC choppers, pulse generator
MAXIMUM RATINGS
I
T (AV)
......................................................................... 20A
V
DRM
.................................................... 400V/600V/800V
I
GT
..........................................................................50mA
Symbol
V
RRM
V
RSM
V
DRM
V
DSM
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Unit
V
V
V
V
8
400
480
400
480
12
600
720
600
720
16
800
850
800
800
Voltage class
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2
t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
--
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mounting torque
Weight
Conditions
Commercial frequency, sine half wave, 180
conduction, T
c
=74
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
V
D
=1/2V
DRM
, I
TM
=60A, I
G
=0.1A, T
j
=25
C, f=60Hz
Typical value
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
kgcm
Nm
g
Ratings
31.5
20
300
380
100
5.0
0.5
10
5
2
30 ~ +125
30 ~ +125
30
2.94
20
LOCK WASHER
NUT
2
3
(22)
8
19
3.5
1.6
1
1.5
3
14
3.5
TYPE NAME
2
3
2.1
11
14
36
25.5
4.4
M6
1
Note: Mica washer and spacer are
provided only upon request.
SOLDERLESS TERMINAL
TELEGRAPH WIRE
2.63~6.64mm
2
OUTLINE DRAWING
Dimensions
in mm
1
2
3
1
2
3
CATHODE
ANODE
GATE
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR20EY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=60A, Instantaneous value
T
j
=125
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, I
T
=0.5A
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, I
T
=0.5A
T
j
=25
C, V
D
=100V, I
T
=15A, I
G
=0.1A
I
T
=20A, V
R
=50V, V
D
=1/2V
DRM
, T
j
=125
C, dv/dt=20V/
s
Junction to case
Case to fin, greased
Unit
mA
mA
V
V/
s
V
V
mA
s
s
C/W
C/W
Typ.
--
--
--
--
--
--
--
--
--
--
--
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
t
gt
t
q
R
th (j-c)
R
th (c-f)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Turn-on time
Turn-off time
Thermal resistance
Contact thermal resistance
Limits
Min.
--
--
--
100
--
0.25
--
--
--
--
--
Max.
6.0
6.0
2.5
--
3.0
--
50
10
15
1.0
0.40
ELECTRICAL CHARACTERISTICS
320
240
200
120
40
0
80
160
280
10
0
2 3
5 7 10
1
2 3
5 7 10
2
4
4
1.0
2.5
3.0
3.5
4.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
1.5
2.0
25C
T
c
= 125C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR20EY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
1.0
0
2 3
10
3
5 710
2
2 3 5 710
1
2 3 5 7 10
0
0.8
0.6
0.4
0.2
0.9
0.7
0.5
0.3
0.1
10
1
2 3
10
1
5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
V
GT
= 3V
P
GM
= 5W
V
GD
= 0.25V
V
FGM
= 10V
I
FGM
= 2A
P
G(AV)
=
0.5W
I
GT
T
j
=
125C
25C
30C
2 3
10
0
5 7 10
1
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (C/
W)
TIME (s)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
80
60
30
20
10
70
50
40
0
0
32
16
4
8
12
20
24
28
= 30
60
120
90
180
360
RESISTIVE,
INDUCTIVE
LOADS
80
60
30
20
10
70
50
40
0
32
0
16
4
8
12
20
24
28
= 30
60
120
90
180
360
RESISTIVE
LOADS
160
120
60
40
20
140
100
80
0
0
32
16
4
8
12
20
24
28
360
RESISTIVE,
INDUCTIVE
LOADS
= 30 60
120
90
180
20
10
2
0
4
6
8
12 14 16 18
160
120
100
60
20
0
40
80
140
= 180
90
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
BX40-06 FIN
120 120 t3
ALUMINUM PLATE
PAINTED BLACK
AND GREASED
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR20EY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
20
10
0
0
20
40
60
120
160
80 100
30
40
50
60
70
80
90
100
140
I
T
= 20A,
tw = 50s
V
R
= 50V, V
D
= 300V
dv/dt = 20V/s
TYPICAL EXAMPLE
80
60
30
20
10
70
50
40
0
0
16
4
8
12
20
24
28
32
DC
= 30
120
90
360
60
180
270
RESISTIVE, INDUCTIVE LOADS
160
120
60
40
20
140
100
80
0
0
16
4
8
12
20
24
28
32
360
= 30 60
120
90
180
RESISTIVE LOADS
160
120
60
40
20
140
100
80
0
0
16
4
8
12
20
24
28
32
360
= 180
= 90
RESISTIVE
LOADS
NATURAL
CONVECTION
BX40-06 FIN
120 120 t3
ALUMINUM PLATE
PAINTED BLACK
AND GREASED
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
160
120
60
40
20
140
100
80
0
0
16
4
8
12
20
24
28
32
DC
360
= 30 60
120
180 270
90
RESISTIVE,
INDUCTIVE
LOADS
TURN-OFF TIME VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
TURN-OFF TIME
(T
j
=
t
C
)
TURN-OFF TIME
(T
j
=
125
C
)
160
120
60
40
20
140
100
80
0
0
16
4
8
12
20
24
28
32
90
DC
= 180
BX40-06 FIN
120 120 t3
ALUMINUM PLATE
PAINTED BLACK
AND GREASED
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR20EY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
40
20
0
0
4
8
12
24
32
16
20
60
80
100
120
140
160
180
200
28
T
j
= 125C
V
R
= 50V
di/dt = 20V/s
V
D
= 1/2V
DRM
TYPICAL EXAMPLE
40
20
0
20
0
20
80
120
40
60
60
80
100
120
140
160
180
200
100
TYPICAL EXAMPLE
GATE TRIGGER CURRENT
GATE TRIGGER
VOLTAGE
TURN-OFF TIME VS.
ON-STATE CURRENT
ON-STATE CURRENT (A)
100 (%)
TURN-OFF TIME
( I
T
= iA
)
TURN-OFF TIME
( I
T
= 20A
)
GATE TRIGGER CURRENTVOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT
VOLTAGE
( T
j
= t
C
)
GATE TRIGGER CURRENT
VOLTAGE
( T
j
=
25
C
)