Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR3AMZ
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR3AMZ
APPLICATION
Automatic strobe flasher
V
1. Refer to sections 1, 2 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM.
Symbol
I
T (AV)
I
TRM
P
GM
P
G (AV)
V
FGM
I
FGM
T
j
T
stg
--
Parameter
Average on-state current
Repetitive peak on-state current
V
1
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
conduction,
C
M
=700
F with discharge current
Typical value
Unit
A
A
W
W
V
A
C
C
g
Ratings
0.4
200
0.5
0.1
6
0.5
40 ~ +125
40 ~ +125
1.1
I
T (AV)
........................................................................ 0.4A
V
DRM
....................................................................... 400V
I
GT
..........................................................................30mA
Symbol
V
RRM
V
RSM
V
DRM
V
DSM
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Voltage class
Unit
V
V
V
V
8
400
480
400
480
MAXIMUM RATINGS
TYPE NAME
VOLTAGE
CLASS
2 3
1
1.00.5
8 MAX
1.20.1
4 MAX
12 MIN
0.8
0.8
2.5 2.5
1.5 MIN
10 MAX
4.5 MAX
1.550.1
0.5
OUTLINE DRAWING
Dimensions
in mm
TO-202
2
1
3
1
2
3
CATHODE
ANODE
GATE
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR3AMZ
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
C
c
Test conditions
T
j
=25
C, V
RRM
applied
T
j
=25
C, V
DRM
applied
T
a
=25
C, I
TM
=3A, Instantaneous value
T
j
=25
C, V
D
=6V, R
L
=6
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, R
L
=6
C
M
=700
F, V
CM
=350V, I
TM
=200A, L=25
H, T
a
=25
C
Unit
mA
mA
V
V
V
mA
F
Typ.
--
--
--
--
--
--
--
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Commutating capacitor
V
2
Min.
--
--
--
--
0.1
--
--
Max.
0.1
0.1
2.0
1.5
--
30
2.2
Limits
ELECTRICAL CHARACTERISTICS
V
2. Refer to section 3 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM.
C
C
1k
0.047
470
470
10k
L
I
T
V
CM
C
M
CR3AMZ-8
10
0.1
+
-
15k
C
M
= 700
F
V
CM
= 350V
I
TM
= 200A
L = 25
H
T
a
= 25C
CONDUCTION TIME : arbitarity
Fig 1. TEST CIRCUIT FOR COMMUTATING CAPACITOR
10
0
2
8
4
6
9
1
7
3
5
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
a
= 25C
10
1
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
1
7
5
3
2
10
0
7
5
3
2
7
5
3
2
10
2
V
FGM
= 6V
V
GT
= 1.5V
I
GT
= 30mA
(T
j
= 25C)
P
GM
= 0.5W
V
GD
= 0.1V
I
FGM
= 0.5A
P
G(AV)
= 0.1W
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR3AMZ
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
2.5
2.2
1.8
1.7
1.6
2.3
2.4
2.1
1.9
2.0
200
100
120
180
140
160
1.5
V
CM
= 350V
C
M
= 700F
L = 25H
T
a
= 25C
SEE FIG.1
1000
700
300
200
100
800
900
600
400
500
0
220
120
140
200
160
180
C
C
=1.7F
C
C
=1.8F
C
C
=1.9F
C
C
=2.0F
C
C
=2.1F
C
C
=
2.3
F
V
CM
= 350V T
a
= 25C
L = 25H SEE FIG.1
C
C
=2.2F
180
150
110
100
90
160
170
140
120
130
100
0
20
80
40
60
90
10
70
30
50
80
V
CM
= 350V
I
TM
= 200A
C
M
= 700F
L = 25H
TYPICAL EXAMPLE
10
2
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
I
G
tw
t
0
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
20 10 0
10 20 30 40 50 60 70 80
10
2
7
5
3
2
4
4
TYPICAL EXAMPLE
1.0
0.7
0.3
0.2
0.1
0.8
0.9
0.6
0.4
0.5
0
80
20
0
30
50
70
60
10
10 20
40
TYPICAL EXAMPLE
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE
( V
)
JUNCTION TEMPERATURE (C)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT
(T
j=
t
C
)
GATE TRIGGER CURRENT
(T
j=
25
C
)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
COMMUTATING CHARACTERISTICS
MAIN CAPACITOR (F)
PEAK ON-STATE CURRENT (A)
COMMUTATING CAPACITOR VS.
PEAK ON-STATE CURRENT
COMMUTATING CAPACITOR (F)
PEAK ON-STATE CURRENT (A)
COMMUTATING CAPACITOR VS.
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (C)
100 (%)
COMMUTATING CAPACITOR
( Ta = tC
)
COMMUTATING CAPACITOR
( Ta = 25C
)
Feb.1999
MITSUBISHI SEMICONDUCTOR
HIGH-SPEED SWITCHING THYRISTOR
CR3AMZ
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
140
40
40
60
20 0
20
60 80 100 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
V
D
= 12V
R
GK
= 1k
140
40
40
60
20 0
20
60 80 100 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
V
D
= 400V
R
GK
= 1k
140
40
40
60
20 0
20
60 80 100 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
,,,,,,,,
V
R
= 400V
R
GK
= 1k
200
140
60
40
20
160
180
120
80
100
0
140
60
20
40
80
120
100
40
0
20
60
R
GK
= 1k
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
=
25
C
)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (C)
PEAK OFF-STATE CURRENT VS.
JUNCTION TEMPERATURE
PEAK OFF-STATE CURRENT (A)
JUNCTION TEMPERATURE (C)
PEAK REVERSE CURRENT VS.
JUNCTION TEMPERATURE
PEAK REVERSE CURRENT (A)
JUNCTION TEMPERATURE (C)
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