Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3CM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR3CM
APPLICATION
TV sets, strobe flasher, ignitors, gas ignitor, static switch, other general purpose control applications
V
1. With Gate-to-cathode resistance R
GK
=1k
.
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
conduction, T
c
=50
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
C
C
g
Ratings
4.7
3.0
90
33
0.5
0.1
6
6
0.3
40 ~ +110
40 ~ +125
1.6
I
T (AV)
........................................................................... 3A
V
DRM
..............................................................400V/600V
I
GT
......................................................................... 200
A
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Voltage class
V
1
Unit
V
V
V
V
V
MAXIMUM RATINGS
8
400
500
320
400
320
12
600
720
480
600
480
TYPE NAME
@
VOLTAGE
CLASS
2 3
1
3.20.2
3.20.1
10 MAX
4
23.70.5
8 MAX
1.20.1
4 MAX
12 MIN
0.8
0.8
2.5 2.5
1.5 MIN
10 MAX
4.5 MAX
1.550.1
0.5
0.5
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
TO-202
2
1
3
1
2
3
4
CATHODE
ANODE
GATE
ANODE
4
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3CM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Test conditions
T
j
=110
C, V
RRM
applied
T
j
=110
C, V
DRM
applied, R
GK
=1k
T
c
=25
C, I
TM
=10A, Instantaneous value
T
j
=25
C, V
D
=6V, I
T
=0.1A
T
j
=110
C, V
D
=1/2V
DRM
, R
GK
=1k
T
j
=25
C, V
D
=6V, I
T
=0.1A
Junction to case
V
2
Unit
mA
mA
V
V
V
A
C/W
Typ.
--
--
--
--
--
--
--
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
R
th (j-c)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Limits
Min.
--
--
--
--
0.1
1
--
Max.
1.0
1.0
1.6
0.8
--
200
V
3
10
ELECTRICAL CHARACTERISTICS
V
2. The method point for case temperature is at anode tab 1.5mm away from the molded case.
V
3. If special values of I
GT
are required, choose at least two items from those listed in the table below. (Example: AB, B~D)
The above values do not include the current flowing through the 1k
resistance between the gate and cathode.
B
20 ~ 50
Item
I
GT
(
A)
A
1 ~ 30
C
40 ~ 100
D
80 ~ 200
3.8
0.6
1.4
2.2
3.0
1.0
1.8
2.6
3.4
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
T
c
= 25C
10
0
2 3
5 7 10
1
40
20
2 3
5 7 10
2
4
4
60
80
100
30
10
50
70
90
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3CM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
0
5 710
0
2 3
5 710
1
2 3
5 710
2
2 3
2 3
10
1
7
10
1
7
5
5
3
2
10
1
7
5
3
2
10
2
7
5
3
2
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 200A
(T
j
= 25C)
I
FGM
= 0.3A
P
GM
= 0.5W
V
GD
= 0.1V
P
G(AV)
= 0.1W
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
1
2 3
10
3
5 710
2
2 3 5 710
1
2 3 5 7 10
0
3
2
10
2
7
5
3
2
7
5
10
0
7
5
3
2
JUNCTION TO AMBIENT
JUNCTION TO CASE
140
120
60
20
60 40
0
20 40
80 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
1.0
0.7
0.6
0.3
0.2
0
120
40 20
20
80
0.1
0.5
0.4
0.8
0.9
0
60
40
100
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
,,,,,,,,,,,,,
TYPICAL EXAMPLE
DISTRIBUTION
160
120
60
40
20
140
100
80
0
5.0
0
1.0
4.0
2.0
3.0
= 30
120
60
90
180
360
RESISTIVE,
INDUCTIVE
LOADS
8
6
3
2
1
7
5
4
0
5.0
0
1.0
4.0
2.0
3.0
= 30
60
120
90
180
360
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE
( V
)
JUNCTION TEMPERATURE (C)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
GATE CHARACTERISTICS
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT
(T
j
=
t
C
)
GATE TRIGGER CURRENT
(T
j
=
25
C
)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (C/
W)
TIME (s)
TYPICAL EXAMPLE
I
GT
(DC)
# 1 6A
# 2 67A
# 1
# 2
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3CM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
160
120
60
40
20
140
100
80
0
5.0
0
4.0
1.0
2.0
3.0
360
180
60 90
= 30
120
RESISTIVE LOADS
8
6
3
2
1
7
5
4
0
5.0
0
4.0
1.0
2.0
3.0
= 30
60
90
180
360
120
RESISTIVE
LOADS
160
120
60
40
20
140
100
80
0
5.0
0
4.0
1.0
2.0
3.0
= 30
90
120
180
60
50 50 t1.2
ALL FINS ARE
BLACK PAINTED
IRON AND GREASED
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
= 30
90
120
180
60
WITHOUT FIN
360
RESISTIVE LOADS
NATURAL
CONVECTION
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
= 30
90
120
180
60
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
WITHOUT FIN
160
120
60
40
20
140
100
80
0
5.0
0
4.0
1.0
2.0
3.0
= 30
90
120
180
60
50 50 t1.2
ALL FINS ARE
BLACK PAINTED
IRON AND GREASED
360
RESISTIVE
LOADS
NATURAL
CONVECTION
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3CM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
40 20
0
20
40
60
80 100 120
160
0
80
100
120
140
40
60
20
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
500
400
0
200
300
100
40 20
0
20
40
60
80 100 120
160
0
80
100
120
140
40
60
20
R
GK
= 1k
TYPICAL EXAMPLE
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
0
80
100
120
40
60
20
T
j
= 110
C
T
j
= 25
C
TYPICAL EXAMPLE
140
120
60
20
40
60
0
20 40
80 100
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
,,,,,,,,,,,,
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
= 2
5
C
)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
JUNCTION TEMPERATURE (
C)
HOLDING CURRENT VS.
GATE TO CATHODE RESISTANCE
GATE TO CATHODE RESISTANCE (k
)
100 (%)
HOLDING CURRENT
( R
GK
=
r
k
)
HOLDING CURRENT
( R
GK
= 1k
)
BREAKOVER VOLTAGE VS.
GATE TO CATHODE RESISTANCE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = vV/
s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/
s
)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= t
C
)
REPETITIVE PEAK REVERSE VOLTAGE (T
j
= 25
C
)
V
D
= 12V
R
GK
= 1k
DISTRIBUTION
I
GT
(25
C) = 35
A
TYPICAL EXAMPLE
# 2
# 1
TYPICAL EXAMPLE
I
GT
(25
C) I
H
(1k
)
# 1 21
A 0.9mA
# 2 59
A 1.4mA
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
0
80
100
140
120
160
180
200
40
60
20
T
j
= 25
C
T
j
= 110
C
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/
s)
100 (%)
BREAKOVER VOLTAGE
( dv/dt = vV/
s
)
BREAKOVER VOLTAGE
( dv/dt = 1V/
s
)
R
GK
= 1k
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR3CM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
2
2
4
3
10
0
5 7 10
1
2 3 4 5 7 10
2
10
4
7
5
3
2
10
3
7
5
3
2
7
5
3
2
10
1
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (
s)
100 (%)
GATE TRIGGER CURRENT
( tw
)
GATE TRIGGER CURRENT
( DC
)
V
D
= 6V
R
L
= 60
T
j
= 25
C
# 2
TYPICAL EXAMPLE
I
GT
(DC)
# 1 6
A
# 2 67
A
# 1
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