Feb.1999
CT30SM-12
600
20
30
30
60
250
40 ~ +150
40 ~ +150
4.8
V
V
V
A
A
W
C
C
g
V
CES ................................................................................
600V
I
C .........................................................................................
30A
High Speed Switching
Low V
CE
Saturation Voltage
15.9MAX.
4.5
1.5
3.2
5.0
20.0
19.5MIN.
2
1.0
5.45
4.4
0.6
2.8
q
w
e
5.45
2
4
4
r
q
GATE
w
COLLECTOR
e
EMITTER
r
COLLECTOR
w r
q
e
V
CES
V
GES
V
GEM
I
C
I
CM
P
C
T
j
T
stg
--
OUTLINE DRAWING
Dimensions in mm
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER UPS USE
APPLICATION
AC & DC motor controls, General purpose invert-
ers, UPS, Power supply switching, Servo controls,
etc.
TO-3P
Conditions
Symbol
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulsed)
Maximum power dissipation
Junction temperature
Storage temperature
Weight
MAXIMUM RATINGS
(Tc = 25
C)
Parameter
Ratings
Unit
V
GE
= 0V
V
CE
= 0V
V
CE
= 0V
Typical value
Feb.1999
V
(BR) CES
I
GES
I
CES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
d (on)
t
r
t
d (off)
t
f
R
th (j-c)
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER UPS USE
600
--
--
4.5
--
--
--
--
--
--
--
--
--
V
A
mA
V
V
pF
pF
pF
ns
ns
ns
ns
C/W
--
--
--
6.0
2.5
1480
180
54
30
135
135
250
--
--
0.5
1
7.5
3.0
--
--
--
--
--
--
--
0.50
I
C
= 1mA, V
GE
= 0V
V
GE
=
30V, V
CE
= 0V
V
CE
= 600V, V
GE
= 0V
I
C
= 3.0mA, V
CE
= 10V
I
C
= 30A, V
GE
= 15V
V
CE
= 25V, V
GE
= 0V, f = 1MHz
V
CC
= 300V, Resistance load,
I
C
= 30A, V
GE
= 15V, R
GE
= 20
Junction to case
0
2
4
6
8
10
0
4
8
12
16
20
I
C
= 60A
10A
30A
T
j
= 25C
0
10
20
30
40
50
0
2
4
6
8
10
T
j
= 25C
V
GE
= 20V
15V
12V
10V
11V
8V
9V
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(V)
ELECTRICAL CHARACTERISTICS
(Tj = 25
C)
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Thermal resistance
PERFORMANCE CURVES
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30SM-12
GENERAL INVERTER UPS USE
0
4
8
12
16
20
0
20
40
60
80
100
V
CC
= 200V
300V
0
1
2
3
4
5
0
10
20
30
40
50
V
GE
= 15V
T
j
= 25C
0
10
20
30
40
50
0
4
8
12
16
20
V
CE
= 10V
T
j
= 25C
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
3
2
T
j
= 25C
V
GE
= 0V
f = 1MH
Z
Cies
Coes
Cres
10
5
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
2 3 5 7
2 3 5 7
10
1
2 3 5 7
10
2
10
3
10
0
2 3 5 7
10
1
10
3
7
5
7
5
3
2
10
2
3
2
2 3 5 7
10
3
2 3 5 7
10
4
10
0
10
1
2
3
5 7
10
2
2
3
5 7
10
1
10
2
2
3
5
7
10
3
2
3
5
7
t
d(off)
t
d(on)
t
f
t
r
T
j
= 25C
V
CC
= 300V
V
GE
= 15V
R
G
= 20
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE
(V)
SWITCHING TIME-COLLECTOR
CURRENT CHARACTERISTIC
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
SWITCHING TIME (ns)
GATE CHARGE Q
g
(nc)
GATE-EMITTER VOLTAGE
VS. GATE CHARGE CHARACTERISTIC
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR CURRENT VS.
GATE EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR CURRENT I
C
(A)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE CHARACTERISTIC
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
CAPACITANCE Cies, Coes, Cres (pF)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
TRANSIENT
THERMAL IMPEDANCE Z
th
(jc
)
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