MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF195
MGF195
MGF195
MGF1951111A
A
A
A
Medium Power Microwave MESFET
MITSUBISHI
1 Aug 2002
(1/4)
PRELIMINARY
DESCRIPTION
The MGF1951A is a 20mW MESFET for S- to Ku-band
driver amplifiers and oscillators.
Its lead-less ceramic package assures minimum parasitics.
FEATURES
High Gain and High Output Power
G
LP
=9dB, P
1dB
=13dBm (typ) @ f=12GHz
Leadless Ceramic Package
APPLICATION
S- to Ku-Band Driver Amplifiers and Oscillators
QUALITY
General Grade
ORDERING INFORMATION
Part Number
Quantity
Supply Form
MGF1951A-01
3.000 pcs/reel
Tape & Reel
ABSOLUTE MAXIMUM RATINGS
(T
a
=+25C)
Symbol Parameter
Rating
Unit
V
GDO
Gate to Drain Voltage
-8
V
V
GSO
Gate to Source Voltage
-8
V
I
D
Drain Current
120
mA
P
T
Total Power Dissipation
300
mW
T
ch
Channel Temperature
125
C
T
stg
Storage Temperature
-65 to +125
C
ELECTRICAL CHARACTERISTICS
(T
a
=+25C)
Symbol Parameter
Test Conditions
MIN
TYP
MAX
Unit
V
(BR)GDO
Gate to Drain Breakdown Voltage
I
G
=-30A
-8
-15
--
V
I
DSS
Saturated Drain Current
V
DS
=3V, V
GS
=0V
35
60
120
mA
V
GS(off)
Gate to Source Cut-off Voltage
V
DS
=3V, I
D
=300A
-0.3
-1.4
-3.5
V
P
1dB
Output Power at
1dB Gain Compression
V
DS
=3V, I
D
=30mA, f=12GHz
11
13
--
dBm
G
LP
Linear Power Gain
V
DS
=3V, I
D
=30mA, P
in
=-5dBm,
f=12GHz
7
9
--
dB
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the
maximum effort into making semiconductor
products better and more reliable, but there is
always the possibility that trouble may occur
with them. Trouble with semiconductors may
lead to personal injury, fire or property
damage. Remember to give due
consideration to safety when making your
circuit designs, with appropriate measure
such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or
(iii) prevention against any malfunction or
mishap.
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF195
MGF195
MGF195
MGF1951111A
A
A
A
Medium Power Microwave MESFET
MITSUBISHI
1 Aug 2002
(3/4)
PRELIMINARY
TYPICAL CHARACTERISTICS
(T
a
=+25C)
DRAIN CURRENT vs DRAIN VOLTAGE
Dr
ain C
u
r
r
ent
I
D
(m
A
)
OUTPUT POWER vs INPUT POWER
20
15
10
5
0
-10 -5 0 5 10
Input Power P
in
(dBm)
O
u
tput
Pow
e
r
P
out
(d
B
m
)
80
70
60
50
40
30
20
10
0
0 1 2 3 4
Drain to Source Voltage V
DS
(V)
80
70
60
50
40
30
20
10
0
-2.0 -1.5 -1.0 -0.5 0
Gate to Source Voltage V
GS
(V)
Dr
ain C
u
r
r
ent
I
D
(m
A
)
DRAIN CURRENT vs GATE VOLTAGE
V
DS
=3V
I
D
=30mA
f=12GHz
-0.2V/step
V
GS
=0V
V
DS
=3V
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF195
MGF195
MGF195
MGF1951111A
A
A
A
Medium Power Microwave MESFET
MITSUBISHI
1 Aug 2002
(4/4)
PRELIMINARY
S PARAMETERS
(V
DS
=3V, I
D
=30mA, T
a
=+25C)
S
11
S
21
S
12
S
22
f
(GHz)
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
K
MAG/MSG
(dB)
1
0.984
-17.7
4.239
163.2
0.016
78.2
0.581
-11.3
0.18
24.3
2
0.946
-38.6
4.103
144.3
0.031
64.3
0.565
-26.2
0.32
21.3
3
0.906
-52.5
3.914
131.2
0.043
54.3
0.548
-34.3
0.43
19.6
4
0.857
-71.1
3.710
115.9
0.054
44.2
0.518
-45.5
0.53
18.4
5
0.811
-85.3
3.445
103.3
0.061
35.6
0.509
-54.9
0.64
17.5
6
0.771
-97.4
3.197
92.5
0.065
29.6
0.500
-61.4
0.76
16.9
7
0.736
-109.8
2.984
81.7
0.069
23.7
0.502
-66.9
0.86
16.4
8
0.710
-121.6
2.847
70.7
0.071
19.0
0.507
-72.1
0.93
16.0
9
0.679
-133.6
2.737
60.4
0.075
15.1
0.509
-75.9
0.99
15.6
10
0.645
-146.3
2.659
50.1
0.083
11.3
0.513
-79.6
0.99
15.1
11
0.594
-159.8
2.600
39.5
0.089
2.6
0.496
-84.2
1.09
12.8
12
0.549
-175.7
2.570
28.4
0.091
-2.7
0.472
-87.2
1.19
11.9
13
0.508
165.8
2.532
16.2
0.095
-9.0
0.443
-91.4
1.27
11.1
14
0.481
142.3
2.480
2.5
0.100
-18.0
0.399
-96.7
1.34
10.5
15
0.472
116.9
2.378
-10.9
0.101
-26.7
0.342
-101.7
1.45
9.7
16
0.508
92.7
2.289
-23.8
0.103
-34.7
0.279
-107.6
1.47
9.4
17
0.573
70.4
2.160
-37.5
0.105
-42.9
0.211
-112.1
1.44
9.2
18
0.646
52.2
1.975
-51.6
0.103
-50.4
0.135
-115.3
1.44
8.9
S-Parameter Reference Planes
Gate
Drain
Source
Source
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