27-March'98
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V6472A
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
.
DESCRIPTION
The MGFC45V6472A is an internally impedance-matched
GaAs power FET especially designed for use in 6.4-7.2
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.)
@
f=6.4-7.2 GHz
High power gain
GLP = 8 dB (TYP.)
@
f=6.4-7.2GHz
High power added efficiency
PAE = 28 % (TYP.)
@
f=6.4-7.2GHz
Low distortion [item -51]
IM3=-42dBc(min.) @Po=34.5dBm S.C.L.
Thermal Resistance
Rth(ch-c)=1.0 deg.C/W(MAX.)
APPLICATION
item 01 : 6.4-7.2 GHz band power amplifier
item 51 : 6.4-7.2 GHz band digital ratio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10V
ID = 8.0 A
RG=25 ohm
ABSOLUTE MAXIMUM RATINGS
(Ta=25 deg.C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
VGSO
Gate to source voltage
-15
V
ID
Drain current
30
A
IGR
Reverse gate current
-60
mA
IGF
Forward gate current
126
mA
PT
Total power dissipation
125
W
Tch
Channel temperature
175
deg.C
Tstg
Storage temperature
-65/+175
deg.C
*1 : Tc=25 deg.C
ELECTRICAL CARACTERISTICS
(Ta=25 deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V, VGS=0V
-
20
-
A
Gm
Transconductance
VDS=3V, ID=6.4A
-
8.0
-
V
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 120mA
-
-
-5
V
P1dB
Output power at 1dB gain
compression
44.5
45
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=8.0A, f=6.4-7.2GHz
7
8
-
dB
PAE
Power added efficiency
-
35
-
%
IM3
3rd order IM distortion *1
-42
-45
-
dBc
Rth(ch-c) Thermal resistance *2
Delta Vf method
-
-
1.0
deg.C/W
*1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
24 +/- 0.3
16.7
20.4 +/- 0.2
OUTLINE DRAWING Unit:millimeters (inches)
GF-38
4.3 +/- 0.4
1.4
2MIN
R1.2
8.0 +/- 0.2
17.4 +/- 0.2
2MIN
(1)
(1) GATE
(2) SOURCE(FIANGE)
(3) DRAIN
(3)
0.1 +/- 0.05
2.4 +/- 0.2
(2)
0.6 +/- 0.15
27-March'98
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V6472A
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS (Ta=25deg.C)
S PARAMETERS
(Ta=25deg.C,VDS=10V,ID=8.0A)
S Parameters (TYP.)
f
S11
S21
S12
S22
(GHz)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
Magn.
Angle(deg.)
6.4
0.66
100
2.39
-106
0.057
-171
0.32
74
6.5
0.61
84
2.43
-122
0.065
174
0.34
64
6.6
0.56
70
2.47
-138
0.071
160
0.35
52
6.7
0.50
57
2.54
-154
0.079
145
0.35
40
6.8
0.43
42
2.59
-170
0.088
131
0.34
27
6.9
0.35
27
2.66
173
0.095
116
0.31
12
7.0
0.24
12
2.73
155
0.101
100
0.27
-8
7.1
0.15
1
2.75
143
0.105
88
0.24
-27
7.2
0.01
-10
2.72
123
0.109
70
0.20
-61
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
P1dB ,GLP vs. f
42
43
44
45
46
47
6.3 6.4
6.5 6.6 6.7 6.8 6.9 7.0 7.1 7.2 7.3
FREQUENCY f(GHz)
OUTPUT POWER P1dB (dBm)
7
8
9
10
11
12
LINEAR POWER GAIN GLP(dB)
P1dB
GLP
VDS=10(V)
IDS=8(A)
Po , PAE vs. Pin
25
30
35
40
45
50
20
25
30
35
40
45
INPUTPOWER Pin(dBm)
OUTPUT POWER Po(dBm)
0
10
20
30
40
50
POWER ADDED EFFICIECY PAE (%)
VDS=10(V)
IDS=8(A)
f=6.8(GHz)
Po
PAE
Po,IM3 vs.Pin
16
20
24
28
32
36
40
44
18
20
22
24
26
28
30
32
34
36
INPUT POWER Pin (dBm S.C.L.)
OUTPUT POWER Po (dBm S.C.L.)
-70
-60
-50
-40
-30
-20
-10
0
IM3 (dBc)
VDS=10(V)
IDS=8(A)
f=7.2(GHz)
Delta f=10(MHz)
Po
IM3
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