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ML1XX6 SERIES
TYPE
NAME
ML1016R, ML120G6
MITSUBISHI LASER DIODES
FOR OPTICAL INFORMATION SYSTEMS
DESCRIPTION
FEATURES
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25C)
APPLICATION
MITSUBISHI
ELECTRIC
Note 3:RL=the load resistance of photodiode for ML1016R
IFD
Forward current (Photodiode)
-
10
mA
Symbol
Parameter
Conditions
Ratings
Unit
Po
Light output power
CW
35
mW
Pulse(Note 2)
50
VRL
Reverse voltage (laser diode)
-
2
V
VRD
Reverse voltage (Photodiode)
-
30
V
Tc
Case temperature
-
-10
~
+60
Tstg
Storage temperature
-
-40
~
+100
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1s
Note 1)
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,
and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi
Semiconductor Quality Assurance Department.
C
C
mA
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
Ith
Threshold current
CW
-
40
mA
Iop
Operating current
CW,Po=30mW
-
80
mA
Slope efficiency
CW,Po=30mW
-
0.7
-
mW/mA
Peak wavelength
CW,Po=30mW
658
nm
Beam divergence angle
(parallel)
CW,Po=30mW
8.5
Beam divergence angle
(perpendicular)
CW,Po=30mW
22
Im
Monitoring output current
(Photodiode) (only for ML1016R)
CW,Po=30mW,VRD=1V
RL=10
(Note 3) 0.35
ID
Dark current (Photodiode)
VRD=10V
-
-
0.5
m
A
Ct
Capacitance (Photodiode)
f=1MHz,VRD=5V
-
7
-
pF
Vop
Operating voltage
CW,Po=30mW
2.7
3.0
V
666
-
70
120
655
11
7
26
17
2.5
0.05
p
//
ML1XX6 is a high power AlGaInP semiconductor laser
which provides a stable, single transverse mode
oscillation with emission wavelength of 658-nm and
standard CW light output of 30mW.
ML1XX6 has a window-mirror-facet which improves
the maximum output power. That leads to highly
reliable and high-power operation.
High Power: 30mW (CW), 50mW (pulse)
Visible Light: 658nm (typ)
DVD(Digital Versatile Disc)-RAM/RW Drive
as of December '99
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ML1XX6 SERIES
MITSUBISHI LASER DIODES
FOR OPTICAL INFORMATION SYSTEMS
MITSUBISHI
ELECTRIC
OUTLINE DRAWINGS
ML1016R
LD
PD
CASE
ML120G6
ML1016R
ML120G6
LD
CASE
200
150
100
50
0
0
10
20
30
40
50
200
150
100
50
0
0
10
20
30
40
50
Operating Current , Iop(mA)
Operating Current , Iop(mA)
Tc=25
C
60
C
70
C
60
50
Tc=25 40
Pulse
Duty: 50%
Width: 1ms
CW
Light Output
Power,
Po
(mW)
Light Output
Power,
Po
(mW)
Light Output Power vs. Current (CW)
Light Output Power vs. Current (Pulse)
Reference data
Typical Characteristics
as of December '99
( 3 / 4 )
ML1XX6 SERIES
MITSUBISHI LASER DIODES
FOR OPTICAL INFORMATION SYSTEMS
MITSUBISHI
ELECTRIC
70
60
50
40
30
20
10
0
10
100
Case Temperature, Tc (
C)
Threshold Current, Ith
(mA)
50
40
30
20
10
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Light Output Power, Po (mW)
Monitor Current,
Im
(mA)
50
Tc=25C
CW
CW
60
40
20
0
-20
-40
-60
0
50
100
Angle (deg.)
Relative Intensity
(%)
Tc=25
C
Po=30mW
50
40
30
20
10
0
0
5
10
Astigmatic Distance,
AS
(mm)
Light Output Power, Po (mW)
Tc=25
C, CW
NA=0.7
PMMA Lens
Far-Field-Patterns
Astigmatic Distance
Threshold Current vs. Temperature
Monitor Photodiode Current
Typical Characteristics
//=9
=22
as of December '99
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ML1XX6 SERIES
MITSUBISHI LASER DIODES
FOR OPTICAL INFORMATION SYSTEMS
MITSUBISHI
ELECTRIC
50
40
30
20
10
0
656
657
658
659
660
661
~0.05nm/mW
70
60
50
40
30
20
10
0
654
656
658
660
662
664
666
668
~0.17nm/
C
Peak Wavelength,
p (nm)
Case Temperature, Tc (
C)
Tc=25
C
CW
Po=30mW
CW
Peak Wavelength,
p (nm)
Light Output Power, Po (mW)
50
40
30
20
10
0
0
200
400
600
800
1000
1200
1400
1600
Polarization Ratio,
P
/P
//
Light Output Power, Po (mW)
25
C
NA=0.5
TE Mode
Polarization Ratio
Peak Wavelength vs. Temperature
Peak Wavelength vs. Light Output Power
Typical Characteristics
as of December '99
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