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Электронный компонент: TM130PZ-M

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Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
TM130DZ/CZ/PZ-M,-H
I
T (AV)
Average on-state current .......... 130A
V
RRM
Repetitive peak reverse voltage
........ 400/800V
V
DRM
Repetitive peak off-state voltage
........ 400/800V
DOUBLE ARMS
 Insulated Type
 UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
(DZ Type)
(DZ Type)
(Bold line is connective bar.)
3
6.5
4M8
A
1
K
1
A
2
K
2
K2
G2
K1
G1
18
16
18
16
32
30
68.5
30
68.5
150
Tab#110,
t=0.5
40
39
32
23
7
A
1
CR
1
K
1
K
2
A
2
K
2
G
2
K
1
G
1
(DZ)
(CZ)
(PZ)
A
1
CR
1
K
1
K
2
CR
2
A
2
K
2
G
2
K
1
G
1
A
1
CR
1
K
1
K
2
CR
2
A
2
K
2
G
2
K
1
G
1
20
6
9
LABEL
CR
2
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
V
Nm
kgcm
Nm
kgcm
g
Conditions
Single-phase, half-wave 180
conduction, T
C
=85
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=125
C
Charged part to case
Main terminal screw M8
Mounting screw M6
Typical value
Ratings
205
130
2600
2.8
10
4
100
10
3.0
10
5.0
4.0
40~+125
40~+125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
--
--
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
s
V
V
mA
C/ W
C/ W
M
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
--
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied
T
j
=125
C, I
TM
=390A, instantaneous meas.
T
j
=125
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
--
--
--
500
--
0.25
15
--
--
10
Typ.
--
--
--
--
--
--
--
--
--
--
Max.
30
30
1.3
--
3.0
--
100
0.22
0.1
--
Feb.1999
1
10
3
10
2
10
0
10
0
10
1
10
1
10
0
10
3
10
4
10
1
10
2
10
1
10
4
10
3
10
2
10
1
10
0.4
7
5
3
2
7
5
3
2
7
5
3
2
0.8
1.2
2.0
2.4
1.6
T
j
=125C
70
50
30
20
7
5
3
2
0
400
3200
10
1
100
800
1200
1600
2000
2400
2800
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
100mA
I
FGM
=4.0A
P
GM
=10W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
3.0W
T
j
=25C
7
5
3
2
7
5
3
2
7
5
3
2
0.25
0
7
5
3
2
0.05
0.10
0.15
0.20
0
0
160
60
20
100
140
160
20
40
60
80
100
120
140
40
80
120
=30
120
90
180
360
60
130
50
0
120
160
20
40
100
60
70
80
90
100
110
120
60
80
140
=30
60 90
360
180
120
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
ON-ST
A
TE CURRENT (A)
SURGE (NON-REPETITIVE)
ON-ST
A
TE CURRENT (A)
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
GA
TE VOL
T
AGE (V)
A
VERAGE ON-ST
A
TE POWER
DISSIP
A
TION (W)
TRANSIENT THERMAL IMPEDANCE
(
C/
W)
CASE TEMPERA
TURE (
C)
TIME (s)
GATE CURRENT (mA)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
Feb.1999
0
0
200
40
200
160
40
80
120
80
120
160
360
=30
60
270
DC
180
120
90
130
50
60
70
80
90
100
110
120
0
200
40
160
80
120
=30 60
DC
270
360
180
90
120
0
0
320
80
40
400
120
350
300
250
200
150
100
50
160 200 240 280
=180
60
90
30
360
120
50
0
320
80
40
130
120 160 200 240 280
60
70
80
90
100
110
120
360
=30
60
90
120
180
0
0
320
120
40
400
200
80
240
80
160
280
160
240
320
=30
60
120
90
180
360
130
50
0
320
80
40
200 240
60
120 160
280
70
80
90
100
110
120
360
=30
60
180
90
120
PER SINGLE
MODULE
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
MODULE
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
A
VERAGE ON-ST
A
TE POWER
DISSIP
A
TION (W)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE FULLWAVE AC)
LIMITING VALUE OF THE RMS
ON-STATE CURRENT
(SINGLE PHASE FULLWAVE AC)
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
MAXIMUM ON-STATE POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
ON-ST
A
TE POWER DISSIP
A
TION (W)
(PER SINGLE MODULE)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
A
VERAGE ON-ST
A
T
E
POWER DISSIP
A
TION (W)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
(PER SINGLE MODULE)
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
Feb.1999
0
0
400
80
400
320
320
160
240
240
160
80
=30
60
120
90
360
50
0
400
80
130
60
320
160
240
70
80
90
100
110
120
90
=30
60
120
360
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
CASE TEMPERA
TURE (
C)
(PER SINGLE MODULE)
ON-ST
A
TE POWER DISSIP
A
TION (W)
(PER SINGLE MODULE)
MAXIMUM ON-STATE POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE