Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
TM200RZ/EZ/GZ-M,-H,24,-2H
I
T (AV)
Average on-state current .......... 200A
I
F (AV)
Average forward current .......... 200A
V
RRM
Repetitive peak reverse voltage
.......... 400/800/1200/1600V
V
DRM
Repetitive peak off-state voltage
.......... 400/800/1200/1600V
MIX DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
3
6.5
3M8
A
1
K
1
A
2
K
2
K1
G1
18
16
18
16
32
30
68.5
30
68.5
150
Tab#110, t=0.5
40
39
32
23
7
A
1
CR
K
1
K
2
SR
A
2
K
1
G
1
(RZ)
(EZ)
(GZ)
A
1
CR
K
1
K
2
SR
A
2
K
1
G
1
A
1
CR
K
1
K
2
SR
A
2
K
1
G
1
20
6
9
LABEL
(RZ Type)
(RZ Type)
(Bold line is connective bar.)
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
V
Nm
kgcm
Nm
kgcm
g
Conditions
Single-phase, half-wave 180
conduction, T
C
=67
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=125
C
Charged part to case
Main terminal screw M8
Mounting screw M6
Typical value
Ratings
310
200
4000
6.7
10
4
100
10
3.0
10
5.0
4.0
40~125
40~125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Symbol
I
T (RMS)
, I
F (RMS)
I
T (AV)
, I
F (AV)
I
TSM
, I
FSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
--
--
Parameter
RMS current
Average current
Surge (non-repetitive) current
I
2t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
s
V
V
mA
C/ W
C/ W
M
Limits
Symbol
I
RRM
I
DRM
V
TM
, V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
--
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied
T
j
=125
C, I
TM
=I
FM
=600A, instantaneous meas.
T
j
=125
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
--
--
--
500
--
0.25
15
--
--
10
Typ.
--
--
--
--
--
--
--
--
--
--
Max.
30
30
1.35
--
3.0
--
100
0.2
0.1
--
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
H
800
960
640
800
960
640
24
1200
1350
960
1200
1350
960
H
1600
1700
1280
1600
1700
1280
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
V
RRM
V
RSM
V
R (DC)
V
DRM
--
V
DSM
--
V
D (DC)
--
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
--
Item
Thyristor
Diode
P
GM
--
PG
(AV)
--
V
FGM
--
I
FGM
--
T
j
T
stg
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
I
RRM
I
DRM
--
dv/dt
--
V
GT
--
V
GD
--
V
TM
V
FM
I
GT
--
R
th (j-c)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
CURRENT
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
CURRENT (A)
GA
TE VOL
T
AGE (V)
SURGE (NON-REPETITIVE)
CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
(
C/
W)
CONDUCTION TIME (CYCLE AT 60Hz)
FORWARD VOLTAGE (V)
GATE CURRENT (mA)
TIME (s)
R
th (c-f)
0
10
1
10
0
10
1
10
2
10
3
10
1
10
0
10
1
10
2
10
4
10
3
10
1
10
4
10
3
10
2
10
1
10
70
50
30
20
7
5
3
2
0
500
4000
10
1
100
1000
1500
2000
2500
3000
3500
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
100mA
I
FGM
=4.0A
P
GM
=10W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
3.0W
T
j
=25C
0.5
7
5
3
2
7
5
3
2
7
5
3
2
1.0
2.0
2.5
1.5
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
0.25
0
7
5
3
2
0.05
0.10
0.15
0.20
3
2
4
Feb.1999
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
A
VERAGE POWER DISSIP
A
TION (W)
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
MAXIMUM AVERAGE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
A
VERAGE POWER DISSIP
A
TION (W)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
0
0
320
40
400
160
80 120
50
100
150
200
250
300
350
200 240 280
=30
60
90
360
270
DC
120
180
30
0
320
40
130
40
280
120
200
80
160
240
50
60
70
80
90
100
110
120
180
DC
=30
360
60
270
90
120
0
0
200
320
40
80
120
160
200
240
280
40
80
120
160
=30
120
90
180
360
60
130
50
0
120
200
40
60
70
80
90
100
110
120
80
160
=30
60
90
360
180
120
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
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