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Электронный компонент: TM25CZ-H

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Feb.1999
93.5
80
17.5
20
20
3M5
2
6.5
26
12.5
K1 G1
K2 G2
Tab # 110,
t=0.5
30
21
6.5
9
(DZ)
A
1
K
2
CR
1
K
1
K
1
G
1
CR
2
A
2
K
2
G
2
(CZ)
A
1
CR
1
K
1
K
2
K
1
G
1
CR
2
A
2
K
2
G
2
LABEL
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
TM25DZ/CZ-M,-H
I
T (AV)
Average on-state current ............ 25A
V
RRM
Repetitive peak reverse voltage
........ 400/800V
V
DRM
Repetitive peak off-state voltage
........ 400/800V
DOUBLE ARMS
 Insulated Type
 UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
V
Nm
kgcm
Nm
kgcm
g
Conditions
Single-phase, half-wave 180
conduction, T
C
=93
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=0.5A, T
j
=125
C
Charged part to case
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
39
25
500
1.0
10
3
100
5.0
0.5
10
5.0
2.0
40~+125
40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
--
--
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
s
V
V
mA
C/ W
C/ W
M
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
--
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied
T
j
=125
C, I
TM
=75A, instantaneous value
T
j
=125
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
--
--
--
500
--
0.25
10
--
--
10
Typ.
--
--
--
--
--
--
--
--
--
--
Max.
4.0
4.0
1.5
--
3.0
--
50
0.8
0.2
--
Feb.1999
0
10
1
10
0
10
1
10
2
10
3
10
1
10
0
10
4
10
3
10
2
10
1
10
1
10
3
10
2
10
1
10
0
10
70
50
30
20
7
5
3
2
0
100
500
200
300
400
10
1
100
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
50mA
I
FGM
=2.0A
P
GM
=5.0W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
0.50W
T
j
=
25C
0.5
7
5
3
2
7
5
3
2
7
5
3
2
1.0
1.5
2.0
2.5
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.4
0.6
0.8
1.0
0
7
5
3
2
0.3
0.5
0.7
0.9
0.1
0
0
25
10
5
15
20
40
5
10
15
20
25
30
35
=30
60
120
90
180
360
130
80
0
20
25
5
10
15
90
100
110
120
=30
60
90 120 180
360
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
ON-ST
A
TE CURRENT (A)
SURGE (NON-REPETITIVE)
ON-ST
A
TE CURRENT (A)
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
GA
TE VOL
T
AGE (V)
A
VERAGE ON-ST
A
TE POWER
DISSIP
A
TION (W)
TRANSIENT THERMAL IMPEDANCE
(
C/
W)
CASE TEMPERA
TURE (
C)
TIME (s)
GATE CURRENT (mA)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
Feb.1999
360
0
0
40
20
10
50
30
10
5
35
15
25
20
30
40
=30
60
270
DC
180
120
90
130
50
60
70
80
90
100
110
120
0
40
20
10
30
35
15
5
25
=30 60 90
DC
270
360
180
120
0
0
80
20
10
80
30
70
60
50
40
30
20
10
40
50
60
70
=180
60
90
30
360
120
80
0
80
20
10
130
30
85
40
90
95
100
105
110
115
120
125
50
60
70
360
=30 60,90
120 180
0
0
50
20
10
80
30
70
60
50
40
30
20
10
40
=30
60
120
90
180
360
130
80
0
50
20
10
30
40
85
90
95
100
105
110
115
120
125
360
=30
60
90
180
120
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
MODULE
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
MODULE
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
A
VERAGE ON-ST
A
TE POWER
DISSIP
A
TION (W)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE FULLWAVE AC)
LIMITING VALUE OF THE RMS
ON-STATE CURRENT
(SINGLE PHASE FULLWAVE AC)
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
MAXIMUM ON-STATE POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
ON-ST
A
TE POWER DISSIP
A
TION (W)
(PER SINGLE MODULE)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
A
VERAGE ON-ST
A
T
E
POWER DISSIP
A
TION (W)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
(PER SINGLE MODULE)
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
Feb.1999
0
0
80
40
20
80
60
70
60
50
40
30
20
10
10
70
30
50
=30
60
120
90
360
80
0
80
40
20
130
60
85
10
70
30
50
90
95
100
105
110
115
120
125
90
=30
60
120
360
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
CASE TEMPERA
TURE (
C)
(PER SINGLE MODULE)
ON-ST
A
TE POWER DISSIP
A
TION (W)
(PER SINGLE MODULE)
MAXIMUM ON-STATE POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
MITSUBISHI THYRISTOR MODULES
TM25DZ/CZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE