Feb.1999
(DZ)
A
1
K
2
CR
1
K
1
K
1
G
1
CR
2
A
2
K
2
G
2
(CZ)
A
1
CR
1
K
1
K
2
K
1
G
1
CR
2
A
2
K
2
G
2
93.5
80
16.5
23
23
3M5
2
6.5
26
13
K1 G1
K2 G2
Tab # 110,
t=0.5
30
21
6.5
9
LABEL
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
TM55DZ/CZ-24,-2H
I
T (AV)
Average on-state current ............ 55A
V
RRM
Repetitive peak reverse voltage
........ 1200/1600V
V
DRM
Repetitive peak off-state voltage
........ 1200/1600V
DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
24
1200
1350
960
1200
1350
960
2H
1600
1700
1280
1600
1700
1280
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
V
Nm
kgcm
Nm
kgcm
g
Conditions
Single-phase, half-wave 180
conduction, T
C
=81
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=125
C
Charged part to case
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
86
55
1100
5.0
10
3
100
5.0
0.5
10
5.0
2.0
40~+125
40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
--
--
Parameter
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I
2t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
s
V
V
mA
C/ W
C/ W
M
Limits
Symbol
I
RRM
I
DRM
V
TM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
--
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied
T
j
=125
C, I
TM
=165A, instantaneous meas.
T
j
=125
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
--
--
--
500
--
0.25
15
--
--
10
Typ.
--
--
--
--
--
--
--
--
--
--
Max.
10
10
1.5
--
2.0
--
100
0.5
0.2
--
Feb.1999
0
10
1
10
0
10
1
10
2
10
3
10
1
10
1
10
0
10
1
10
2
10
3
10
4
10
3
10
2
10
1
10
0
10
70
50
30
20
7
5
3
2
200
400
1200
600
800
1000
10
1
100
0.6
7
5
3
2
7
5
3
2
7
5
3
2
0.8
1.2
2.0 2.2
1.6
1.0
1.4
1.8
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=2.0V
I
GT
=
100mA
I
FGM
=2.0A
P
GM
=5.0W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
0.50W
T
j
=25C
7
5
3
2
7
5
3
2
7
5
3
2
0.8
0
7
5
3
2
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0
80
30
10
50
70
80
10
20
30
40
50
60
70
20
40
60
=30
120
90
180
360
60
130
50
0
60
80
10
20
50
60
70
80
90
100
110
120
30
40
70
=30 60
360
120
180
90
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
ON-ST
A
TE CURRENT (A)
SURGE (NON-REPETITIVE)
ON-ST
A
TE CURRENT (A)
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
GA
TE VOL
T
AGE (V)
A
VERAGE ON-ST
A
TE POWER
DISSIP
A
TION (W)
TRANSIENT THERMAL IMPEDANCE
(
C/
W)
CASE TEMPERA
TURE (
C)
TIME (s)
GATE CURRENT (mA)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
Feb.1999
0
0
100
20
100
80
20
40
60
40
60
80
360
=30
60
270
DC
180
120
90
130
50
60
70
80
90
100
110
120
0
100
20
80
40
60
=30 60
DC
270
360
180
90
120
0
0
160
40
20
160
60
140
120
100
80
60
40
20
80 100 120 140
=180
60
90
30
360
120
50
0
160
40
20
130
60
80 100 120 140
60
70
80
90
100
110
120
360
=30
60
90
120
180
0
0
160
60
20
160
100
140
120
100
80
60
40
20
120
40
80
140
=30
60
120
90
180
360
130
50
0
160
40
20
100 120
60
60
80
140
70
80
90
100
110
120
360
=30 60
180
120
90
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
MODULE
RESISTIVE,
INDUCTIVE
LOAD
PER SINGLE
MODULE
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(RECTANGULAR WAVE)
A
VERAGE ON-ST
A
TE POWER
DISSIP
A
TION (W)
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE FULLWAVE AC)
LIMITING VALUE OF THE RMS
ON-STATE CURRENT
(SINGLE PHASE FULLWAVE AC)
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
MAXIMUM ON-STATE POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
ON-ST
A
TE POWER DISSIP
A
TION (W)
(PER SINGLE MODULE)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
A
VERAGE ON-ST
A
T
E
POWER DISSIP
A
TION (W)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
(PER SINGLE MODULE)
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
Feb.1999
0
0
160
80
40
160
120
140
120
100
80
60
40
20
20
140
60
100
=30
60
120
90
360
50
0
160
80
40
130
120
60
20
140
60
100
70
80
90
100
110
120
90
=30
60
120
360
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
CASE TEMPERA
TURE (
C)
(PER SINGLE MODULE)
ON-ST
A
TE POWER DISSIP
A
TION (W)
(PER SINGLE MODULE)
MAXIMUM ON-STATE POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
MITSUBISHI THYRISTOR MODULES
TM55DZ/CZ-24,-2H
HIGH VOLTAGE HIGH POWER GENERAL USE
INSULATED TYPE
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