www.docs.chipfind.ru
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
TM90RZ/EZ-M,-H
I
T (AV)
Average on-state current ............ 90A
I
F (AV)
Average forward current ............ 90A
V
RRM
Repetitive peak reverse voltage
........ 400/800V
V
DRM
Repetitive peak off-state voltage
........ 400/800V
MIX DOUBLE ARMS
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
93.5
80
17.5
20
20
3M5
2
6.5
26
12.5
K1
G1
Tab#110, t=0.5
30
21
6.5
9
(RZ)
A
1
K
2
CR
K
1
K
1
G
1
A
2
(EZ)
A
1
CR
K
1
K
2
K
1
G
1
SR
A
2
SR
LABEL
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Unit
V
V
V
V
V
V
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
M
400
480
320
400
480
320
H
800
960
640
800
960
640
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
DSM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Unit
A
A
A
A
2
s
A/
s
W
W
V
V
A
C
C
V
Nm
kgcm
Nm
kgcm
g
Conditions
Single-phase, half-wave 180
conduction, T
C
=86
C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
V
D
=1/2V
DRM
, I
G
=1.0A, T
j
=125
C
Charged part to case
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
140
90
1800
1.4
10
4
100
5.0
0.5
10
5.0
2.0
40~125
40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Symbol
I
T (RMS)
, I
F (RMS)
I
T (AV)
, I
F (AV)
I
TSM
, I
FSM
I
2t
di/dt
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
V
iso
--
--
Parameter
RMS current
Average current
Surge (non-repetitive) current
I
2t
for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Voltage class
ELECTRICAL CHARACTERISTICS
Unit
mA
mA
V
V/
s
V
V
mA
C/ W
C/ W
M
Limits
Symbol
I
RRM
I
DRM
V
TM
, V
FM
dv/dt
V
GT
V
GD
I
GT
R
th (j-c)
R
th (c-f)
--
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
Insulation resistance
Test conditions
T
j
=125
C, V
RRM
applied
T
j
=125
C, V
DRM
applied
T
j
=125
C, I
TM
=I
FM
=270A, instantaneous meas.
T
j
=125
C, V
D
=2/3V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
T
j
=125
C, V
D
=1/2V
DRM
T
j
=25
C, V
D
=6V, R
L
=2
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
--
--
--
500
--
0.25
15
--
--
10
Typ.
--
--
--
--
--
--
--
--
--
--
Max.
15
15
1.3
--
3.0
--
100
0.3
0.2
--
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM RATINGS
Item
Thyristor
Diode
V
RRM
V
RSM
V
R (DC)
V
DRM
--
V
DSM
--
V
D (DC)
--
I
T (RMS)
I
F (RMS)
I
T (AV)
I
F (AV)
I
TSM
I
FSM
I
2t
di/dt
--
Item
Thyristor
Diode
P
GM
--
PG
(AV)
--
V
FGM
--
I
FGM
--
T
j
T
stg
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
I
RRM
I
DRM
--
dv/dt
--
V
GT
--
V
GD
--
V
TM
V
FM
I
GT
--
R
th (j-c)
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
RATED SURGE (NON-REPETITIVE)
CURRENT
GATE CHARACTERISTICS
MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
CURRENT (A)
GA
TE VOL
T
AGE (V)
SURGE (NON-REPETITIVE)
CURRENT (A)
TRANSIENT THERMAL IMPEDANCE
(
C/
W)
CONDUCTION TIME (CYCLE AT 60Hz)
FORWARD VOLTAGE (V)
GATE CURRENT (mA)
TIME (s)
R
th (c-f)
3
10
2
10
1
10
0
10
0
10
1
10
1
10
0
10
4
10
3
10
2
10
1
10
1
10
3
10
2
10
1
10
0
10
70
50
30
20
7
5
3
2
0
400
2000
800
1200
1600
10
1
100
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
7
5
3
2
4
7
5
4
V
GT
=3.0V
I
GT
=
100mA
I
FGM
=2.0A
P
GM
=5.0W
V
FGM
=10V
V
GD
=0.25V
P
G(AV)
=
0.50W
T
j
=25C
0.4
7
5
3
2
7
5
3
2
7
5
3
2
0.8
1.2
2.0
2.4
1.6
T
j
=125C
7
5
3
2
7
5
3
2
7
5
3
2
0.40
0
7
5
3
2
0.05
0.10
0.15
0.20
0.25
0.30
0.35
Feb.1999
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
A
VERAGE POWER DISSIP
A
TION (W)
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
MAXIMUM AVERAGE
POWER DISSIPATION
(RECTANGULAR WAVE)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
AVERAGE CURRENT (A)
AVERAGE CURRENT (A)
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
A
VERAGE POWER DISSIP
A
TION (W)
RMS CURRENT (A)
RMS CURRENT (A)
A
VERAGE POWER DISSIP
A
TION (W)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
CASE TEMPERA
TURE (
C)
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE MODULE
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
0
0
160
20
160
80
40
60
20
40
60
80
100
120
140
100 120 140
360
=30
60
270
DC
180
120
90
0
0
200
40
200
80
120
160
40
80
120
160
=180
60
90
30
360
120
80
0
200
40
130
80
120
160
90
100
110
120
360
=30
60
90
120
180
130
50
60
70
80
90
100
110
120
0
160
20
80
40
60
100 120 140
=30 60
DC
270
360
180
90
120
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE MODULE
0
0
100
80
160
20
40
60
80
100
120
140
20
40
60
=30
120
90
180
360
60
130
50
0
60
100
20
60
70
80
90
100
110
120
40
80
=30
60 90
360
120 180
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE MODULE
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE ELEMENT
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE ELEMENT
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE ELEMENT
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE MODULE
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE MODULE
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE MODULE
Feb.1999
CASE TEMPERA
TURE (
C)
(PER SINGLE MODULE)
POWER DISSIP
A
TION (W)
(PER SINGLE MODULE)
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
CASE TEMPERA
TURE (
C)
(PER SINGLE MODULE)
POWER DISSIP
A
TION (W)
(PER SINGLE MODULE)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
0
0
320
160
80
200
240
40
280
120
200
40
80
120
160
=30
60
120
90
360
50
0
320
160
80
130
240
60
40
280
120
200
70
80
90
100
110
120
90
=30
60
360
120
0
0
200
320
280
240
200
160
120
80
40
120
40
80
160
=30
60
120
90
180
360
130
80
0
200
40
120
80
160
90
100
110
120
120
360
=30
60
180
90
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
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