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Электронный компонент: V29C51004TT70

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MOSEL VITELIC
1
V29C51004T/V29C51004B
4 MEGABIT (524,288 x 8 BIT)
5 VOLT CMOS FLASH MEMORY
PRELIMINARY
V29C51004T/V29C51004B Rev. 1.5 October 2000
Features
s
512Kx8-bit Organization
s
Address Access Time: 70, 90 ns
s
Single 5V
10% Power Supply
s
Sector Erase Mode Operation
s
16KB Boot Block (lockable)
s
1K bytes per Sector, 512 Sectors
Sector-Erase Cycle Time: 10ms (Max)
Byte-Write Cycle Time: 20
s (Max)
s
Minimum 10,000 Erase-Program Cycles
s
Low power dissipation
Active Read Current: 20mA (Typ)
Active Program Current: 30mA (Typ)
Standby Current: 50
A (Max)
s
Hardware Data Protection
s
Low V
CC
Program Inhibit Below 3.5V
s
Self-timed write/erase operations with end-of-
cycle detection
DATA Polling
Toggle Bit
s
CMOS and TTL Interface
s
Available in two versions
V29C51004T (Top Boot Block)
V29C51004B (Bottom Boot Block)
s
Packages:
32-pin TSOP-I
32-pin PLCC
Description
The V29C51004T/V29C51004B is a high speed
524,288 x 8 bit CMOS flash memory. Writing or
erasing the device is done with a single 5 Volt
power supply. The device has separate chip enable
CE, write enable WE, and output enable OE
controls to eliminate bus contention.
The V29C51004T/V29C51004B offers a combi-
nation of: Boot Block with Sector Erase/Write
Mode. The end of write/erase cycle is detected by
DATA Polling of I/O
7
or by the Toggle Bit I/O
6
.
The V29C51004T/V29C51004B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. The device also
supports full chip erase.
Boot block architecture enables the device to
boot from a protected sector located either at the
top (V29C51004T) or the bottom (V29C51004B).
A l l i n p u t s a n d o u t p u t s a r e C M O S a n d T T L
compatible.
The V29C51004T/V29C51004B is ideal for
applications that require updatable code and data
storage.
Device Usage Chart
Operating
Temperature Range
Package Outline
Access Time (ns)
Temperature
Mark
T
J
70
90
0
C to 70
C
Blank
2
V29C51004T/V29C51004B Rev. 1.5 October 2000
MOSEL VITELIC
V29C51004T/V29C51004B
OPERATING VOLTAGE
51: 5V
DEVICE
SPEED
51004-01
V
29
C
004
51
BOOT BLOCK LOCATION
T: TOP
B: BOTTOM
T
70: 70ns
90: 90ns
BLANK (0
C TO 70
C)
T = TSOP-I
J = PLCC
TEMP.
PKG.
Pin Configurations
A
6
A
5
A
4
A
3
A
2
A
1
I/O
0
5
6
7
8
9
10
11
12
13
29
51004-02
28
27
26
25
24
23
22
21
A
12
A
15
A
16
A
18
V
CC
WE
A
17
A
0
14
I/O
2
GND
I/O
3
I/O
4
I/O
5
I/O
6
A
7
A
13
A
8
A
9
A
11
OE
A
10
I/O
7
CE
A
14
I/O
1
32 Pin PLCC
Top View
15 16 17 18 19 20
4
3
2
1
32 31 30
Pin Names
A
0
A
18
Address Inputs
I/O
0
I/O
7
Data Input/Output
CE
Chip Enable
OE
Output Enable
WE
Write Enable
V
CC
5V
10% Power Supply
GND
Ground
NC No
Connect
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
8
9
10
11
12
13
14
15
16
30
31
32
29
28
27
26
25
7
24
23
22
21
20
32-Pin TSOP I
Standard Pinout
Top View
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
A3
A2
A1
A0
I/O0
19
18
17
51004-03
MOSEL VITELIC
V29C51004T/V29C51004B
3
V29C51004T/V29C51004B Rev. 1.5 October 2000
Functional Block Diagram
Capacitance
(1,2)
NOTE:
1.
Capacitance is sampled and not 100% tested.
2.
T
A
= 25
C, V
CC
= 5V
10%, f = 1 MHz.
Latch Up Characteristics
(1)
NOTE:
1.
Includes all pins except V
CC
. Test conditions: V
CC
= 5V, one pin at a time.
AC Test Load
Symbol
Parameter
Test Setup
Typ.
Max.
Units
C
IN
Input Capacitance
V
IN
= 0
6
8
pF
C
OUT
Output Capacitance
V
OUT
= 0
8
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
8
10
pF
Parameter Min.
Max.
Unit
Input Voltage with Respect to GND on A
9
, OE
-1
+13
V
Input Voltage with Respect to GND on I/O, address or control pins
-1
V
CC
+ 1
V
V
CC
Current
-100
+100
mA
Address buffer & latches
A
0
A
18
51004-07
I/O Buffer & Data Latches
I/O
0
I/O
7
Y-Decoder
4,194,304 Bit
Memory Cell Array
X-Decoder
Control Logic
CE
OE
WE
51004-08
IN3064 or Equivalent
IN3064
or Equivalent
2.7 k
6.2 k
+5.0 V
IN3064 or Equivalent
IN3064 or Equivalent
C
L
= 100 pF
Device Under
Test
4
V29C51004T/V29C51004B Rev. 1.5 October 2000
MOSEL VITELIC
V29C51004T/V29C51004B
Absolute Maximum Ratings
(1)
NOTE:
1.
Stress greater than those listed unders "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2.
No more than one output maybe shorted at a time and not exceeding one second long.
DC Electrical Characteristics
(over the commercial operating range)
Symbol
Parameter
Commercial
Unit
V
IN
Input Voltage (input or I/O pins)
-2 to +7
V
V
IN
Input Voltage (A
9
pin, OE)
-2 to +13
V
V
CC
Power Supply Voltage
-0.5 to +5.5
V
T
STG
Storage Temerpature (Plastic)
-65 to +125
C
T
OPR
Operating Temperature
0 to +70
C
I
OUT
Short Circuit Current
(2)
200 (Max.)
mA
Parameter
Name
Parameter
Test Conditions
Min.
Max.
Unit
V
IL
Input LOW Voltage
V
CC
= V
CC
Min.
--
0.8
V
V
IH
Input HIGH Voltage
V
CC
= V
CC
Max.
2
--
V
I
IL
Input Leakage Current
V
IN
= GND to V
CC
, V
CC
= V
CC
Max.
--
1
A
I
OL
Output Leakage Current
V
OUT
= GND to V
CC
, V
CC
= V
CC
Max.
--
10
A
V
OL
Output LOW Voltage
V
CC
= V
CC
Min., I
OL
= 2.1mA
--
0.4
V
V
OH
Output HIGH Voltage
V
CC
= V
CC
Min, I
OH
= -400
A
2.4
--
V
I
CC1
Read Current
CE = OE = V
IL
, WE = V
IH
, all I/Os open,
Address input = V
IL
/V
IH
, at f = 1/t
RC
Min.,
V
CC
= V
CC
Max.
--
40
mA
I
CC2
Write Current
CE = WE = VIL, OE = V
IH
, V
CC
= V
CC
Max.
--
50
mA
I
SB
TTL Standby Current
CE = OE = WE = V
IH
, V
CC
= V
CC
Max.
--
1
mA
I
SB1
CMOS Standby Current
CE = OE = WE = V
CC
0.3V, V
CC
= V
CC
Max.
--
100
A
V
H
Device ID Voltage for A
9
CE = OE = V
IL
, WE = V
IH
11.5
12.5
V
I
H
Device ID Current for A
9
CE = OE = V
IL
, WE = V
IH
, A9 = V
H
Max.
--
50
A
MOSEL VITELIC
V29C51004T/V29C51004B
5
V29C51004T/V29C51004B Rev. 1.5 October 2000
AC Electrical Characteristics
(over all temperature ranges)
Read Cycle
Program (Erase/Program) Cycle
Parameter
Name
Parameter
-70
-90
Unit
Min.
Max.
Min.
Max.
t
RC
Read Cycle Time
70
--
90
--
ns
t
AA
Address Access Time
--
70
--
90
ns
t
ACS
Chip Enable Access Time
--
70
--
90
ns
t
OE
Output Enable Access Time
--
35
--
45
ns
t
CLZ
CE Low to Output Active
0
--
0
--
ns
t
OLZ
OE Low to Output Active
0
--
0
--
ns
t
DF
OE or CE High to Output in High Z
0
30
0
40
ns
t
OH
Output Hold from Address Change
0
--
0
--
ns
Parameter
Name
Parameter
-70
-90
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
t
WC
Write Cycle Time
70
--
--
90
--
--
ns
t
AS
Address Setup Time
0
--
--
0
--
--
ns
t
AH
Address Hold Time
45
--
--
45
--
--
ns
t
CS
CE Setup Time
0
--
--
0
--
--
ns
t
CH
CE Hold Time
0
--
--
0
--
--
ns
t
OES
OE Setup Time
0
--
--
0
--
--
ns
t
OEH
OE High Hold Time
0
--
--
0
--
--
ns
t
WP
WE Pulse Width
35
--
--
45
--
--
ns
t
WPH
WE Pulse Width High
20
--
--
30
--
--
ns
t
DS
Data Setup Time
30
--
--
30
--
--
ns
t
DH
Data Hold Time
0
--
--
0
--
--
ns
t
WHWH1
Programming Cycle
--
--
20
--
--
20
s
t
WHWH2
Sector Erase Cycle
--
--
10
--
--
10
ms
t
WHWH3
Chip Erase Cycle
--
2
--
--
2
--
sec
6
V29C51004T/V29C51004B Rev. 1.5 October 2000
MOSEL VITELIC
V29C51004T/V29C51004B
Waveforms of Read Cycle
Waveforms of WE Controlled-Program Cycle
NOTES:
1.
I/O
7
: The output is the complement of the data written to the device.
2.
PA: The address of the memory location to be programmed.
3.
PD: The data at the byte address to be programmed.
t
RC
t
AA
t
CE
t
OE
t
CLZ
t
OH
t
AA
t
OLZ
t
DF
ADDRESS
CE
OE
WE
I/O
VALID DATA OUT
VALID DATA OUT
HIGH-Z
51004-09
HIGH-Z
t
WC
t
AS
PA
5555H
t
WHWH1
t
WPH
t
CS
t
RC
t
AH
t
DS
t
DH
t
WP
t
OES
t
DF
t
OH
t
OE
D
OUT
I/O
7
(1)
PD
(3)
A0H
51004-10
ADDRESS
CE
OE
WE
I/O
3rd bus cycle
PA
(2)
t
CH
MOSEL VITELIC
V29C51004T/V29C51004B
7
V29C51004T/V29C51004B Rev. 1.5 October 2000
Waveforms of CE Controlled-Program Cycle
Waveforms of Erase Cycle
(1)
NOTES:
1.
PA: The address of the memory location to be programmed.
2.
PD: The data at the byte address to be programmed.
3.
SA: The sector address for Sector Erase.
t
WC
t
AS
t
WHWH1
t
WPH
t
OES
t
RC
t
AH
t
DS
t
DH
t
WP
t
DF
t
OH
t
OE
D
OUT
I/O7
PD
(2)
A0H
51004-11
ADDRESS
5555H
PA
PA
(1)
WE
OE
CE
I/O
t
WC
t
AS
t
WPH
t
WHWH
2
3
ADDRESS
CE
OE
WE
I/O
5555H
5555H
5555H
2AAAH
2AAAH
SA
(5555H for Chip Erase)
AAH
55H
80H
AAH
55H
30H
(10H for
Chip Erase)
51004-12
t
AH
t
WP
t
DS
t
DH
t
CS
8
V29C51004T/V29C51004B Rev. 1.5 October 2000
MOSEL VITELIC
V29C51004T/V29C51004B
Waveforms of DATA Polling Cycle
Waveforms of Toggle Bit Cycle
t
OEH
t
CE
t
WHWH1 (2 or 3)
t
OH
t
DF
t
CH
CE
OE
WE
I/O
7
I/O
7
I/O
7
VALID DATA OUT
HIGH-Z
t
OE
51004-13
I/O
0
-I/O
6
I/O
0
-I/O
6
INVALID
VALID DATA OUT
HIGH-Z
51004-14
CE
WE
OE
t
OEH
stop toggling
I/O
6
t
WHWH1 (2 or 3)
9
V29C51004T/V29C51004B Rev. 1.5 October 2000
MOSEL VITELIC
V29C51004T/V29C51004B
Functional Description
The V29C51004T/V29C51004B consists of 512
equally-sized sectors of 1K bytes each. The 16 KB
lockable Boot Block is intended for storage of the
system BIOS boot code. The boot code is the first
piece of code executed each time the system is
powered on or rebooted.
The V29C51004 is available in two versions: the
V29C51004T with the Boot Block address starting
from 7C000H to 7FFFFH, and the V29C51004B
with the Boot Block address starting from 00000H
to 3FFFFH.
Read Cycle
A read cycle is performed by holding both CE
and OE signals LOW. Data Out becomes valid only
when these conditions are met. During a read cycle
WE must be HIGH prior to CE and OE going LOW.
WE must remain HIGH during the read operation
for the read to complete (see Table 1).
Output Disable
Returning OE or CE HIGH, whichever occurs first
will terminate the read operation and place the l/O
pins in the HIGH-Z state.
Standby
The device will enter standby mode when the CE
signal is HIGH. The l/O pins are placed in the
HIGH-Z, independent of the OE input state.
Command Sequence
T h e V 2 9 C 5 1 0 0 4 T / V 2 9 C 5 1 0 0 4 B d o e s n o t
provide the "reset" feature to return the chip to its
normal state when an incomplete command
sequence or an interruption has happened. In this
case, normal operation (Read Mode) can be
restored by issuing a "non-existent" command
sequence, for example Address: 5555H, Data FFH.
Byte Write Cycle
The V29C51004T/V29C51004B is programmed
on a byte-by-byte basis. The byte write operation is
initiated by using a specific four-bus-cycle
sequence: two unlock program cycles, a program
setup command and program data program cycles
(see Table 2).
During the byte write cycle, addresses are
latched on the falling edge of either CE or WE,
whichever is last. Data is latched on the rising edge
of CE or WE, whichever is first. The byte write cycle
can be CE controlled or WE controlled.
Sector Erase Cycle
The V29C51004T/V29C51004B features a
sector erase operation which allows each sector to
be erased and reprogrammed without affecting
data stored in other sectors. Sector erase operation
is initiated by using a specific six-bus-cycle
sequence: Two unlock program cycles, a setup
command, two additional unlock program cycles,
and the sector erase command (see Table 2). A
sector must be first erased before it can be re-
16KB Boot Block
1 KB
1 KB
1 KB
1 KB
1 KB
1 KB
16KB Boot Block
V29C51004T
V29C51004B
7FFFFH
7C000H
00000H
03FFFH
51004-15
00000H
16KB Boot Block = 32 Sectors
Table 1. Operation Modes Decoding
NOTES:
1.
X = Don't Care, V
IH
= HIGH, V
IL
= LOW, V
H
= 12.5V Max.
2.
PD: The data at the byte address to be programmed.
Decoding Mode
CE
OE
WE
A
0
A
1
A
9
I/O
Read
V
IL
V
IL
V
IH
A
0
A
1
A
9
READ
Byte Write
V
IL
V
IH
V
IL
A
0
A
1
A
9
PD
Standby
V
IH
X
X
X
X
X
HIGH-Z
Autoselect Device ID
V
IL
V
IL
V
IH
V
IH
V
IL
V
H
CODE
Autoselect Manufacture ID
V
IL
V
IL
V
IH
V
IL
V
IL
V
H
CODE
Enabling Boot Block Protection Lock
V
IL
V
H
V
IL
X
X
V
H
X
Disabling Boot Block Protection Lock
V
H
V
H
V
IL
X
X
V
H
X
Output Disable
V
IL
V
IH
V
IH
X
X
X
HIGH-Z
10
V29C51004T/V29C51004B Rev. 1.5 October 2000
MOSEL VITELIC
V29C51004T/V29C51004B
written. While in the internal erase mode, the
device ignores any program attempt into the
device. The internal erase completion can be
determined via DATA polling or toggle bit status.
The V29C51004T/V29C51004B is shipped fully
erased (all bits = 1).
Chip Erase Cycle
The V29C51004T/V29C51004B features a chip-
erase operation. The chip erase operation is
i n i t i a t e d b y u s i n g a s p e c i f i c s i x - b u s - c y c l e
sequence: two unlock program cycles, a setup
command, two additional unlock program cycles,
and the chip erase command (see Table 2).
The automatic erase begins on the rising edge of
the last WE or CE pulse in the command sequence
and terminates when the data on DQ7 is "1".
Program Cycle Status Detection
There are two methods for determining the state
o f t h e V 2 9 C 5 1 0 0 4 T / V 2 9 C 5 1 0 0 4 B d u r i n g a
program (erase/write) cycle: DATA Polling (I/O
7
)
and Toggle Bit (I/O
6
).
DATA Polling (I/O
7
)
The V29C51004T/V29C51004B features DATA
polling to indicate the end of a program cycle.
When the device is in the program cycle, any
attempt to read the device will received the
complement of the loaded data on I/O
7
. Once the
program cycle is completed, I/O
7
will show true
data, and the device is then ready for the next
cycle.
Toggle Bit (I/O
6
)
The V29C51004T/V29C51004B also features
another method for determining the end of a
program cycle. When the device is in the program
cycle, any attempt to read the device will result in
l/O
6
toggling between 1 and 0. Once the program is
completed, the toggling will stop. The device is then
ready for the next operation. Examining the toggle
bit may begin at any time during a program cycle.
Boot Block Protection Enabling/Disabling
T h e V 2 9 C 5 1 0 0 4 T / V 2 9 C 5 1 0 0 4 B f e a t u r e s
hardware Boot Block Protection. The boot block
sector protection is enabled when high voltage
(12.5V) is applied to OE and A9 pins with CE pin
LOW and WE pin LOW. The sector protection is
disabled when high voltage is applied to OE, CE
and A9 pins with WE pin LOW. Other pins can be
HIGH or LOW. This is shown in table 1.
Autoselect Mode
The V29C51004T/V29C51004B features an
Autoselect mode to identify boot block locking
status, device ID and manufacturer ID.
Entering Autoselect mode is accomplished by
applying a high voltage (VH) to the A9 Pin, or
through a sequence of commands (as shown in
table 2). Device will exit this mode once high
voltage on A9 is removed or another command is
loaded into the device.
Table 2. Command Codes
NOTES:
1.
RA: Read Address
2.
RD: Read Data
3.
PA: The address of the memory location to be programmed.
4.
PD: The data at the byte address to be programmed.
5.
SA(5): Sector Address
Command
Sequence
First Bus
Program Cycle
Second Bus
Program Cycle
Third Bus
Program Cycle
Fourth Bus
Program Cycle
Fifth Bus
Program Cycle
Six Bus
Program Cycle
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
Address
Data
Read
XXXXH
F0H
Read
5555H
AAH
2AAAH
55H
5555H
F0H
RA(1)
RD(2)
Autoselect
Mode
5555H
AAH
2AAAH
55H
5555H
90H
See table 3 for detail.
Byte
Program
5555H
AAH
2AAAH
55H
5555H
A0H
PA
PD(4)
Chip Erase
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
5555H
10H
Sector Erase
5555H
AAH
2AAAH
55H
5555H
80H
5555H
AAH
2AAAH
55H
SA(5)
30H
11
V29C51004T/V29C51004B Rev. 1.5 October 2000
MOSEL VITELIC
V29C51004T/V29C51004B
Boot Block Protection Status
In Autoselect mode, performing a read at
address location 3CXX2H (V29C51004T) or
0CXX2H (V29C51004B) will indicate boot block
protection status. If the data is 01H, the boot block
is protected. If the data is 00H, the boot block is
unprotected. This is also shown is table 3.
Device ID
In Autoselect mode, performing a read at
address XXX1H will determine whether the device
is a Top Boot Block device or a Bottom Boot Block
device. If the data is 03H, the device is a Top Boot
Block. If the data is A3H, the device is a Bottom
Boot Block device (see Table 3).
Manufacturer ID
In Autoselect mode, performing a read at
address XXXX0H will determine the manufacturer
ID. 40H is the manufacturer code for Mosel Vitelic
Flash.
Hardware Data Protection
V
CC
Detection: the program operation is inhibited
when VCC is less than 3.5V.
Noise Protection: a CE or WE pulse of less than
5ns will not initiate a program cycle.
Program Inhibit: holding any one of OE LOW, CE
HIGH or WE HIGH inhibits a program cycle.
Table 3. Autoselect Decoding
NOTE:
1.
X = Don't Care, V
IH
= HIGH, V
IL
= LOW.
Decoding Mode
Boot Block
Address
Data I/O
0
I/O
7
A
0
A
1
A
2
A
13
A
14
A
17
Boot Block Protection
Top
V
IL
V
IH
X
V
IH
01H: protected
Bottom
V
IL
V
IH
X
V
IL
00H: unprotected
Device ID
Top
V
IH
V
IL
X
X
03H
Bottom
A3H
Manufacture ID
V
IL
V
IL
X
X
40H
12
V29C51004T/V29C51004B Rev. 1.5 October 2000
MOSEL VITELIC
V29C51004T/V29C51004B
Byte Program Algorithm
Chip/Sector Erase Algorithm
Write Byte-Write
Command Sequence
Add/Data
5555H/AAH
2AAAH/55H
5555H/A0H
Four Bus
Cycle
Sequence
PA/PD
Data Polling or Toggle bit
successfully completed
or t
WTWH (2 or 3)
timeout
Data Polling or Toggle bit
successfully completed
or t
WTWH (2 or 3)
timeout
Writing
Completed
Write Erase
Command Sequence
Add/Data
5555H/AAH
2AAAH/55H
5555H/80H
Six Bus
Cycle
Sequence
5555H/AAH
2AAAH/55H
5555H/10H (Chip Erase)
SA/30H (Sector Erase)
Erase Completed
51004-16
MOSEL VITELIC
V29C51004T/V29C51004B
13
V29C51004T/V29C51004B Rev. 1.5 October 2000
DATA Polling Algorithm
Toggle Bit Algorithm
NOTE:
1.
PBA: The byte address to be programmed.
Read I/O
7
Address = PBA
(1)
Program
Done
Program
Done
I/O
7
= Data
No
Yes
Read I/O
6
No
Yes
I/O
6
Toggle
Read I/O
6
51004-17
14
V29C51004T/V29C51004B Rev. 1.5 October 2000
MOSEL VITELIC
V29C51004T/V29C51004B
Package Diagrams
32-pin PLCC
32-pin TSOP-I
.420
.003
3
- 6
3
- 6
3
- 6
.017
30
.136
.003
.110
.046
.003
.025
.050 TYP
.450
.003
.490
.005
.045X45
.590
.005
.550
.003
20
19 18
17 16 15
14
21
22
23
24
25
26
27
28
29
30
31 32
1
2
3
4
13
12
11
10
9
8
7
6
5
0.032 TYP.
0.020 SBC
0.003 MAX
0.020 MAX.
0.024
0.004
SEATING
PLANE
0.010
See Detail "A"
Detail "A"
0.724 TYP. (0.728 MAX.)
0.787
0.008
0.009
0.002
0.315 TYP.
(0.319 MAX.)
0.035
0.002
0.047 MAX.
0.005 MIN.
0.007 MAX.
Units in inches
MOSEL VITELIC
WORLDWIDE OFFICES
V29C51004T/V29C51004B
Copyright 2000, MOSEL VITELIC Inc.
10/00
Printed in U.S.A.
MOSEL VITELIC
3910 N. First Street, San Jose, CA 95134-1501 Ph: (408) 433-6000 Fax: (408) 433-0952 Tlx: 371-9461
The information in this document is subject to change without
notice.
MOSEL VITELIC makes no commitment to update or keep cur-
rent the information contained in this document. No part of this
document may be copied or reproduced in any form or by any
means without the prior written consent of MOSEL-VITELIC.
MOSEL VITELIC subjects its products to normal quality control
sampling techniques which are intended to provide an assurance
of high quality products suitable for usual commercial applica-
tions. MOSEL VITELIC does not do testing appropriate to provide
100% product quality assurance and does not assume any liabil-
ity for consequential or incidental arising from any use of its prod-
ucts. If such products are to be used in applications in which
personal injury might occur from failure, purchaser must do its
own quality assurance testing appropriate to such applications.
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