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Электронный компонент: V437464Q24VXTG-75

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MOSEL VITELIC
1
V437464Q24V
3.3 VOLT 64M x 72 HIGH PERFORMANCE
UNBUFFERED ECC SDRAM MODULE
PRELIMINARY
V437464Q24V Rev. 1.0 January 2002
Features
s
168 Pin Unbuffered ECC 67,108,864 x 72 bit
Oganization SDRAM Modules
s
Utilizes High Performance 64M x 4 SDRAM in
TSOPII-54 Packages
s
Fully PC Board Layout Compatible to INTEL'S
Rev 1.2 Module Specification
s
Single +3.3V ( 0.3V) Power Supply
s
Programmable CAS Latency, Burst Length, and
Wrap Sequence (Sequential & Interleave)
s
Auto Refresh (CBR) and Self Refresh
s
All Inputs, Outputs are LVTTL Compatible
s
8192 Refresh Cycles every 64 ms
s
Serial Present Detect (SPD)
Description
The V437464Q24V memory module is organized
67,108,864 x 72 bits in a 168 pin dual in line
memory module (DIMM). The 64M x 72 unbuffered
DIMM uses 18 Mosel-Vitelic 64M x 4 ECC SDRAM.
The x72 unbuffered modules are ideal for use in
high
performance
computer
systems
where
increased memory density and fast access times
are required.
Part Number
Speed
Grade
Configuration
V437464Q24VXTG-75PC
-75PC, CL=3,2
(133 MHz)
64M x 72
V437464Q24VXTG-75
-75, CL=3
(133 MHz)
64M x 72
V437464Q24VXTG-10PC
-10PC, CL=3,2
(100 MHz)
64M x 72
2
V437464Q24V Rev. 1.0 January 2002
MOSEL VITELIC
V437464Q24V
Pin Configurations (Front Side/Back Side)
Notes:
*
.
Pin
Front
Pin
Front
Pin
Front
Pin
Back
Pin
Back
Pin
Back
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
VSS
I/O1
I/O2
I/O3
I/O4
VCC
I/O5
I/O6
I/O7
I/O8
I/O9
VSS
I/O10
I/O11
I/O12
I/O13
I/O14
VCC
I/O15
I/O16
CBO
CB1
VSS
NC
NC
VCC
WE
DQM0
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
DQM1
CS0
DU
VSS
A0
A2
A4
A6
A8
A10(AP)
BA1
VCC
VCC
CLK0
VSS
DU
CS2
DQM2
DQM3
DU
VCC
NC
NC
CB2
CB3
VSS
I/O17
I/O18
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
I/O19
I/O20
VCC
I/O21
NC
DU
CKE1*
VSS
I/O22
I/O23
I/O24
VSS
I/O25
I/O26
I/O27
I/O28
VCC
I/O29
I/O30
I/O31
I/O32
VSS
CLK2*
NC
WP
SDA
SCL
VCC
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
VSS
I/O33
I/O34
I/O35
I/O36
VCC
I/O37
I/O38
I/O39
I/O40
I/O41
VSS
I/O42
I/O43
I/O44
I/O45
I/O46
VCC
I/O47
I/O48
CB4
CB5
VSS
NC
NC
VCC
CAS
DQM4
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
DQM5
CS1
RAS
VSS
A1
A3
A5
A7
A9
BA0
A11
VCC
CLK1*
A12
VSS
CKE0
CS3
DQM6
DQM7
DU
VCC
NC
NC
CB6
CB7
VSS
I/O49
I/O50
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
I/O51
I/O52
VCC
I/O53
NC
DU
REGE
VSS
I/O54
I/O55
I/O56
VSS
I/O57
I/O58
I/O59
I/O60
VCC
I/O61
I/O62
I/O63
I/O64
VSS
CLK3*
NC
SA0
SA1
SA2
VCC
Pin Names
A0A11
Address Inputs
I/O1I/O64
Data Inputs/Outputs
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read/Write Input
BA0, BA1
Bank Selects
CKE0
Clock Enable
CS0, CS2
Chip Select
CLK0CLK3
Clock Input
DQM0DQM7
Data Mask
VCC
Power (+3.3 Volts)
VSS
Ground
SCL
Clock for Presence Detect
SDA
Serial Data OUT for Presence
Detect
SA0A2
Serial Data IN for Presence
Detect
CB0CB4
Check Bits (x72 Organization)
NC
No Connection
REGE
Register Enable
DU
Don't Use
MOSEL VITELIC
V437464Q24V
3
V437464Q24V Rev. 1.0 January 2002
Module Part Number Information
V
4
3
74
64
Q
2
4
V
X
T
G - XX
SDRAM
3.3V
WIDTH
DEPTH
168 PIN Unbuffered
DIMM X4 COMPONENT
REFRESH
RATE 8K
4 BANKS
LVTTL
COMPONENT A=0.17u B=0.14u
REV LEVEL
COMPONENT
PACKAGE, T = TSOP
LEAD FINISH
G = GOLD
SPEED
75PC = PC133 CL3,2
MOSEL VITELIC
MANUFACTURED
75
= PC133 CL3
10PC = PC100 CL3,2
4
V437464Q24V Rev. 1.0 January 2002
MOSEL VITELIC
V437464Q24V
Block Diagram
DQM0
I/O1I/O4
10
CS0
CS
D0D17
RAS
D0D17
CAS
D0D17
WE
CKE0
DQM0DQM7
CS0, CS
D0D17
A0A12
D0D17
BA0, BA1
CLK1CLK3
D0D17
12pF
10K
DQM
I/O1I/O4
D0
I/O5I/O8
10
CS
DQM
I/O1I/O4
D1
DQM4
I/O33I/O36
10
CS
DQM
I/O1I/O4
D9
I/O37I/O40
10
CS
DQM
I/O1I/O4
D10
DQM1
I/O9I/O12
10
CS
DQM
I/O1I/O4
D2
I/O13I/O16
10
CS
DQM
I/O1I/O4
D3
DQM5
I/O41I/O44
10
CS
DQM2
I/O17I/O20
10
CS
DQM
I/O1I/O4
D5
I/O21I/O24
10
CS
DQM
I/O1I/O4
D6
DQM6
I/O49I/O52
10
CS
DQM
I/O1I/O4
D14
I/O53I/O56
10
CS
DQM
I/O1I/O4
D15
DQM3
I/O25I/O28
10
CS
DQM
I/O1I/O4
D7
I/O29I/O32
10
CS
DQM
I/O1I/O4
D8
DQM7
I/O57I/O60
10
CS
DQM
I/O1I/O4
D16
I/O61I/O64
10
CS
DQM
I/O1I/O4
D17
DQM
I/O1I/O4
D11
I/O45I/O48
10
CS
DQM
I/O1I/O4
D12
CB1CB3
10
CS
DQM
I/O1I/O4
D4
CB4CB7
10
CS
DQM
I/O1I/O4
D13
CS2
CLK0
D0D17
D0D17
D0D17
MOSEL VITELIC
V437464Q24V
5
V437464Q24V Rev. 1.0 January 2002
Serial Presence Detect Information
A serial presence detect storage device
E
2
PROM is assembled onto the module. Informa-
tion about the module configuration, speed, etc. is
written into the E
2
PROM device during module pro-
duction using a serial presence detect protocol (I
2
C
synchronous 2-wire bus)
SPD-Table for modules:
Byte Num-
ber
Function Described
SPD Entry Value
Hex Value
-75PC
-75
-10PC
0
Number of SPD bytes
128
80
80
80
1
Total bytes in Serial PD
256
08
08
08
2
Memory Type
SDRAM
04
04
04
3
Number of Row Addresses (without BS bits)
13
0D
0D
0D
4
Number of Column Addresses (for x4
SDRAM)
11
0B
0B
0B
5
Number of DIMM Banks
1
01
01
01
6
Module Data Width
72
48
48
48
7
Module Data Width (continued)
0
00
00
00
8
Module Interface Levels
LVTTL
01
01
01
9
SDRAM Cycle Time at CL=3
7.5ns/10.0 ns
75
75
A0
10
SDRAM Access Time from Clock at CL=3
5.4/6.0 ns
54
54
60
11
Dimm Config (Error Det/Corr.)
ECC
02
02
02
12
Refresh Rate/Type
Self-Refresh, 15.8
s
80
80
80
13
SDRAM width, Primary
x4
04
04
04
14
Error Checking SDRAM Data Width
x4
04
04
04
15
Minimum Clock Delay from Back to Back
Random Column Address
t
ccd
= 1 CLK
01
01
01
16
Burst Length Supported
1, 2, 4, 8
0F
0F
0F
17
Number of SDRAM Banks
4
04
04
04
18
Supported CAS Latencies
CL = 2, 3
06
06
06
19
CS Latencies
CS Latency = 0
01
01
01
20
WE Latencies
WL = 0
01
01
01
21
SDRAM DIMM Module Attributes
Non Buffered/Non Reg
00
00
00
22
SDRAM Device Attributes: General
Vcc tol 10%
0E
0E
0E
23
Minimum Clock Cycle Time at CAS Latency
= 2
7.5 ns/10.0 ns
75
A0
A0
24
Maximum Data Access Time from Clock for
CL = 2
5.4 ns/6.0 ns
54
60
60
25
Minimum Clock Cycle Time at CL = 1
Not Supported
00
00
00
26
Maximum Data Access Time from Clock at
CL = 1
Not Supported
00
00
00
27
Minimum Row Precharge Time
15 ns/20 ns
0F
14
14
6
V437464Q24V Rev. 1.0 January 2002
MOSEL VITELIC
V437464Q24V
28
Minimum Row Active to Row Active Delay
t
RRD
14 ns/15 ns/16 ns
0E
0F
10
29
Minimum RAS to CAS Delay t
RCD
15 ns/20 ns
14
14
14
30
Minimum RAS Pulse Width t
RAS
42 ns/45 ns
2D
2D
2D
31
Module Bank Density (Per Bank)
512 MByte
80
80
80
32
SDRAM Input Setup Time
1.5 ns/2 ns
15
15
20
33
SDRAM Input Hold Time
0.8 ns/1 ns
08
08
10
34
SDRAM Data Input Setup Time
1.5 ns/2 ns
15
15
20
35
SDRAM Data Input Hold Time
0.8 ns/1 ns
08
08
10
36-61
Superset Information (May be used in Fu-
ture)
00
00
00
62
SPD Revision
Revision 2/1.2
02
02
12
63
Checksum for Bytes 0 - 62
46
8B
F9
64
Manufacturer's JEDEC ID Code
Mosel Vitelic
40
40
40
65-71
Manufacturer's JEDEC ID Code (cont.)
00
00
00
72
Manufacturing Location
73-90
Module Part Number (ASCII)
V437464Q24V
91-92
PCB Identification Code
93
Assembly Manufacturing Date (Year)
94
Assembly Manufacturing Date (Week)
95-98
Assembly Serial Number
99-125
Reserved
00
00
00
126
Intel Specification for Frequency
100 MHz
64
64
64
127
Detailed Information
128+
Unused Storage Location
00
08
08
SPD-Table for modules: (Continued)
Byte Num-
ber
Function Described
SPD Entry Value
Hex Value
-75PC
-75
-10PC
MOSEL VITELIC
V437464Q24V
7
V437464Q24V Rev. 1.0 January 2002
DC Characteristics
T
A
= 0
C to 70
C; V
SS
= 0 V; V
DD
, V
DDQ
= 3.3V
0.3V
Capacitance
T
A
= 0
C to 70
C; V
DD
= 3.3V
0.3V, f = 1 MHz
Symbol
Parameter
Limit Values
Unit
Min.
Max.
V
IH
Input High Voltage
2.0
V
CC
+0.3
V
V
IL
Input Low Voltage
0.3
0.8
V
V
OH
Output High Voltage (I
OUT
= 4.0 mA)
2.4
--
V
V
OL
Output Low Voltage (I
OUT
= 4.0 mA)
--
0.4
V
I
I(L)
Input Leakage Current, any input
(0 V < V
IN
< 3.6 V, all other inputs = 0V)
10
10
A
I
O(L)
Output leakage current
(DQ is disabled, 0V < V
OUT
< V
CC
)
10
10
A
Symbol
Parameter
Limit Values
Unit
Min.
Max.
C
I1
Input Capacitance (A0 to A11, RAS, CAS, WE)
8
15
pF
C
I2
Input Capacitance (CS0-CS3)
8
15
pF
C
ICL
Input Capacitance (CLK0)
--
20
pF
C
I3
Input Capacitance (CKE0)
8
15
pF
C
I4
Input Capacitance (DQM0-DQM7)
8
15
pF
C
IO
Input/Output Capacitance (I/O1-I/064)
9
16
pF
C
SC
Input Capacitance (SCL, SA0-2)
--
8
pF
8
V437464Q24V Rev. 1.0 January 2002
MOSEL VITELIC
V437464Q24V
Absolute Maximum Ratings
Standby and Refresh Currents
1
T
A
= 0
C to 70
C, V
CC
= 3.3V
0.3V
Parameter
Max.
Units
Voltage on VDD Supply Relative to V
SS
-1 to 4.6
V
Voltage on Input Relative to V
SS
-1 to 4.6
V
Operating Temperature
0 to +70
C
Storage Temperature
-55 to 125
C
Power Dissipation
15
W
Sym-
bol
Parameter
Test Conditions
-10PC
Unit
Note
I
CC
1
Operating Current
Burst length = 4, CL = 3
t
RC
> = t
RC
(min),
t
CK
> = t
CK
(min), IO = 0 mA
2 Bank Interleave Operation
4140
3780
mA
1,2
I
CC
2P
Precharged Standby Current in
PowerDown Mode
CKE< = V
IL
(max), t
CK
> = t
CK
(min)
36
36
mA
I
CC
2N
Precharged Standby Current in
Non-Power Down Mode
CKE> = V
IH
(min), t
CK
> = t
CK
(min), In-
put changed once in 3 cycles
810
630
mA
CS =
High
I
CC
3P
Active Standby Current in Power
Down Mode
CKE< = V
IL
(max), t
CK
> = t
CK
(min)
180
180
mA
I
CC
3N
Active Standby Current in Non-Pow-
er Down Mode
CKE> = V
IH
(min), t
CK
> = t
CK
(min), In-
put changed one time
990
810
mA
CS =
High
I
CC
4
Burst Operating Current
t
RC
= Infinite, CL = 3,
t
CK
> = t
CK
(min), IO = 0 mA
2 Banks Activated
2700
2160
mA
1, 2
I
CC
5
Auto Refresh Current
t
RC
>= t
RC
(min)
4320
3960
mA
1,2
I
CC
6
Self Refresh Current
CKE = <0,2 V
Standard
54
54
mA
1,2
L-version
32
32
-75PC/75
MOSEL VITELIC
V437464Q24V
9
V437464Q24V Rev. 1.0 January 2002
AC Characteristics
3,4
T
A
= 0 to 70
C; V
SS
= 0V; V
CC
= 3.3V
0.3V, t
T
= 1 ns
#
Symbol Parameter
Limit Values
Unit
Note
-75PC
-75
-10PC
Min.
Max.
Min.
Max.
Min.
Max.
Clock and Clock Enable
1
t
CK
Clock Cycle Time
CAS Latency = 3
CAS Latency = 2
7.5
7.5
7.5
10
10
10
ns
ns
2
f
CK
System frequency
CAS Latency = 3
CAS Latency = 2
133
133
133
100
100
100
MHz
MHz
3
t
AC
Clock Access Time
CAS Latency = 3
CAS Latency = 2
5.4
5.4
5.4
6
6
6
ns
ns
2, 4
4
t
CH
Clock High Pulse Width
2.5
2.5
3
ns
6
5
t
CL
Clock Low Pulse Width
2.5
2.5
3
ns
6
6
t
CS
Input Setup time
1.5
1.5
2
ns
7
7
t
CH
Input Hold Time
0.8
0.8
1
ns
7
8
t
CKSP
CKE Setup Time (Power down mode)
2
2
2
ns
8
9
t
CKSR
CKE Setup Time (Self Refresh Exit)
8
8
8
ns
9
10
t
T
Transition time (rise and fall)
1
1
1
ns
Common Parameters
11
t
RCD
RAS to CAS delay
15
20
20
ns
6
12
t
RC
Cycle Time
60
120K
60
120K
70
120K
ns
6
13
t
RAS
Active Command Period
42
45
45
ns
6
14
t
RP
Precharge Time
15
20
20
ns
6
15
t
RRD
Bank to Bank Delay Time
14
15
16
ns
6
16
t
CCD
CAS to CAS delay time
(same bank)
1
1
1
CLK
Refresh Cycle
17
t
SREX
Self Refresh Exit Time
10
10
10
ns
18
t
REF
Refresh Period (8192 cycles)
64
64
64
ms
Read Cycle
19
t
OH
Data Out Hold Time
3
3
3
ns
2, 4
20
t
LZ
Data Out to Low Impedance Time
0
0
0
ns
21
t
HZ
Data Out to High Impedance Time
3
7.5
3
7.5
3
9
ns
10
22
t
DQZ
DQM Data Out Disable Latency
2
2
2
CLK
Write Cycle
23
t
DPL
Data input to Precharge (write recovery)
2
2
1
CLK
24
t
DQW
DQM Write Mask Latency
0
0
0
CLK
11
10
V437464Q24V Rev. 1.0 January 2002
MOSEL VITELIC
V437464Q24V
Notes:
1.
The specified values are valid when addresses are changed no more than once during t
CK
(min.) and when No
Operation commands are registered on every rising clock edge during t
RC
(min). Values are shown per module
bank.
2.
The specified values are valid when data inputs (DQ's) are stable during t
RC
(min.).
3.
All AC characteristics are shown for device level.
An initial pause of 100
s is required after power-up, then a Precharge All Banks command must be given followed
by 8 Auto Refresh (CBR) cycles before the Mode Register Set Operation can begin.
4.
AC timing tests have V
IL
= 0.4V and V
IH
= 2.4V with the timing referenced to the 1.4V crossover point. The transition
time is measured between V
IH
and V
IL
. All AC measurements assume t
T
= 1 ns with the AC output load circuit
shown. Specific tac and toh parameters are measured with a 50 pF only, without any resistive termination and with
a input signal of 1V / ns edge rate between 0.8V and 2.0V.
5.
If clock rising time is longer than 1 ns, a time (t
T
/2 -0.5) ns has to be added to this parameter.
6.
Rated at 1.5V
7.
If t
T
is longer than 1 ns, a time (t
T
-1) ns has to be added to this parameter.
8.
Any time that the refresh Period has been exceeded, a minimum of two Auto (CBR) Refresh commands must be
given to "wake-up" the device.
9.
Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after CKE returns high.
Self Refresh Exit is not complete until a time period equal to t
RC
is satisfied once the Self Refresh Exit command
is registered.
10.
Referenced to the time which the output achieves the open circuit condition, not to output voltage levels.
11.
t
DAL
is equivalent to t
DPL
+ t
RP
.
1.4V
1.4V
tSETUP
tHOLD
tAC
tAC
tLZ
tOH
tHZ
CLOCK
INPUT
OUTPUT
50 pF
I/O
Z=50 Ohm
+ 1.4 V
50 Ohm
2.4V
0.4V
t
T
tCL
tCH
I/O
Measurement conditions for
tac and toh
50 pF
MOSEL VITELIC
V437464Q24V
11
V437464Q24V Rev. 1.0 January 2002
Package Diagram
L-DIM-168-30
SDRAM DIMM Module Package
127.35
133.37
42.18
D
63.68
3.0
1.27 0.100
All measurements in mm
43.15
1
10
11
40
41
84
85
94
95
124
125
168
17.80
B
A
6.35
2.26
RADIUS
1.27 + 0.10
Detail A
3.125
4.45
2.0
6.35
3.175
Detail B
3.125
2.0
1.0 0.05
1.27
Detail C
2.50
0.2 0.15
4.0
Tolerances: (0.13) unless otherwise specified.
(4.0 max)
12
V437464Q24V Rev. 1.0 January 2002
MOSEL VITELIC
V437464Q24V
Label Information
C
L
= 3 or 2 (CLK)
t
RCD
= 3 or 2 (CLK)
t
RP
= 3 or 2 (CLK)
-XXX
U
UNBUFFERED DIMM
PC133
54
JEDEC SPD Revision 2
2
V437464Q24VXXX-XX 512MB CLX
PC133U-XXX-542-A
XXXX-XXXXXXX
Assembly in Taiwan
A
Gerber file Intel PC100 x4 Based
MOSEL VITELIC
Part Number
Module Density
DIMM manufacture date code
Criteria of PC100 or PC133
(refer to MVI datasheet)
t
AC
= 5.4 ns
CAS Latency
2=CL2
3=CL3
MOSEL VITELIC
V437464Q24V
13
V437464Q24V Rev. 1.0 January 2002
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own quality assurance testing appropriate to such applications.
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