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Электронный компонент: V53C8128H50

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1
MOSEL-VITELIC
V53C8128H
V53C8128H Rev. 1.1 November 1997
HIGH PERFORMANCE
35
40
45
50
Max.
RAS
Access Time, (t
RAC
)
35 ns
40 ns
45 ns
50 ns
Max. Column Address Access Time, (t
CAA
)
18 ns
20 ns
22 ns
24 ns
Min. Fast Page Mode With EDO Cycle Time, (t
PC
)
14 ns
15 ns
17 ns
19 ns
Min. Read/Write Cycle Time, (t
RC
)
70 ns
75 ns
80 ns
90 ns
PRELIMINARY
V53C8128H
ULTRA-HIGH PERFORMANCE,
128K X 8 BIT EDO PAGE MODE
CMOS DYNAMIC RAM
Device Usage Chart
Operating
Package Outline
Access Time (ns)
Power
Temperature
Temperature
Range
K
35
40
45
50
Std.
Mark
0
C to 70
C
Blank
Features
s
128K x 8-bit organization
s
RAS
access time: 35, 40, 45, 50 ns
s
EDO Page Mode supports sustained I/O data
rates up to 71.5 MHz
s
Low power dissipation
V53C8128H-50
-- Operating Current 135 mA max
-- TTL Standby Current 2.0 mA max
s
Low CMOS Standby Current
V53C8128H 1.0 mA max
s
Read-Modify-Write,
RAS
-Only Refresh,
CAS
-Before-
RAS
Refresh capability
s
Refresh Interval
V53C8128H 512 cycles/8 ms
s
Available in 26/24 pin 300 mil SOJ package
Description
The V53C8128H is a high speed 131,072 x 8 bit
CMOS dynamic random access memory. The
V53C8128H offers a combination of features: EDO
Page Mode for high data bandwidth, fast usable
speed, CMOS standby current.
All inputs and outputs are TTL compatible. Input
and output capacitances are significantly lowered to
allow increased system performance. Page Mode
with extended data out operation allows random
access of up to 256 columns (x8) bits within a row
with cycle times as short as 14 ns. Because of static
circuitry, the
CAS
clock is not in the critical timing
path. The flow-through column address latches
allow address pipelining while relaxing many critical
system timing requirements for fast usable speed.
These features make the V53C8128H ideally suited
for graphics, digital signal processing and high
performance Peripherals.
2
MOSEL-VITELIC
V53C8128H
V53C8128H Rev. 1.1 November 1997
Capacitance*
T
A
= 25
C, V
CC
= 5 V
10%, V
SS
= 0 V
Symbol
Parameter
Typ. Max.
Unit
C
IN1
Address Input
3
4
pF
C
IN2
RAS
,
CAS
,
WE
,
OE
4
5
pF
C
OUT
Data Input/Output
5
7
pF
* Note: Capacitance is sampled and not 100% tested
Absolute Maximum Ratings*
Ambient Temperature
Under Bias ............................. 10
C to +80
C
Storage Temperature (plastic) .... 55
C to +125
C
Voltage Relative to V
SS ....................
1.0 V to +7.0 V
Data Output Current .................................... 50 mA
Power Dissipation ......................................... 1.0 W
*Note: Operation above Absolute Maximum Ratings can
adversely affect device reliability.
26/24 Lead SOJ
PIN CONFIGURATION
Top View
Pin Names
A
0
A
8
Address Inputs (A
8
: Row
Address only)
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Write Enable
OE
Output Enable
I/O
1
I/O
8
Data Input, Output
V
CC
+5V Supply
V
SS
0V Supply
Description
Pkg.
Pin Count
SOJ
K
26/24
FAMILY
DEVICE
PKG
3838 01
( t
RAC
)
SPEED
PWR.
V
5
3
C
1
2
8
35 (35 ns)
40 (40 ns)
45 (45 ns)
50 (50 ns)
TEMP.
BLANK (0
C to 70
C)
BLANK (NORMAL)
(SOJ)
K
H
8
VSS
I/O1
I/O2
I/O3
I/O4
WE
RAS
A0
A1
A2
A3
VCC
1
2
3
4
5
6
8
9
10
11
12
13
26
25
24
23
22
21
19
18
17
3838 02
16
15
300 mil
VSS
I/O8
I/O7
I/O6
I/O5
CAS
OE
A8
A7
A6
A5
A4
14
3
MOSEL-VITELIC
V53C8128H
V53C8128H Rev. 1.1 November 1997
Block Diagram
A 0
A 1
A7
A8
SENSE AMPLIFIERS
REFRESH
COUNTER
VCC
VSS
9
I/O 1
ADDRESS BUFFERS
AND PREDECODERS
ROW
DECODERS
512
MEMORY
ARRAY
COLUMN DECODERS
DATA I/O BUS
Y0Y7
X0X8
256 x 8
I/O
BUFFER
I/O2
I/O3
I/O4
OE CLOCK
GENERATOR
WE CLOCK
GENERATOR
CAS CLOCK
GENERATOR
RAS CLOCK
GENERATOR
OE
3838 03
128K x 8
WE
CAS
RAS


I/O 5
I/O6
I/O7
I/O8
4
MOSEL-VITELIC
V53C8128H
V53C8128H Rev. 1.1 November 1997
DC and Operating Characteristics (1-2)
T
A
= 0
C to 70
C, V
CC
= 5 V
10%, V
SS
= 0 V, unless otherwise specified.
V53C8128H
Time
Min.
Typ. Max.
Unit
Test Conditions
Notes
I
LI
Input Leakage Current
10
10
A
V
SS
V
IN
V
CC
(any input pin)
I
LO
Output Leakage Current
10
10
A
V
SS
V
OUT
V
CC
(for High-Z State)
RAS
,
CAS
at V
IH
35
160
40
150
mA
t
RC
= t
RC
(min.)
1, 2
45
145
50
135
I
CC2
V
CC
Supply Current,
RAS
,
CAS
at V
IH
TTL Standby
4
mA
other inputs
V
SS
35
160
I
CC3
40
150
mA
t
RC
= t
RC
(min.)
2
45
145
50
135
I
CC4
35
95
40
90
mA
Minimum cycle
1, 2
45
85
50
80
I
CC5
V
CC
Supply Current,
2
mA
RAS
=V
IH
,
CAS
=V
IL
1
Standby, Output Enabled
other inputs
V
SS
I
CC6
V
CC
Supply Current,
RAS
V
CC
0.2 V,
CMOS Standby
1
mA
CAS
V
CC
0.2 V,
All other inputs
V
SS
V
IL
Input Low Voltage
1
0.8
V
3
V
IH
Input High Voltage
2.4
V
CC
+1
V
3
V
OL
Output Low Voltage
0.4
V
I
OL
= 4.2 mA
V
OH
Output High Voltage
2.4
V
I
OH
= 5 mA
Access
I
CC1
V
CC
Supply Current,
Operating
V
CC
Supply Current,
EDO Page Mode
Operation
V
CC
Supply Current,
RAS
-Only Refresh
Symbol
Parameter
5
MOSEL-VITELIC
V53C8128H
V53C8128H Rev. 1.1 November 1997
AC Characteristics
T
A
= 0
C to 70
C, V
CC
= 5 V
10%, V
SS
= 0V unless otherwise noted
AC Test conditions, input pulse levels 0 to 3V
35
40
45
50
#
Symbol
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Min. Max.
Unit
Notes
1
t
RL1RH1
t
RAS
RAS
Pulse Width
35
75K
40
75K
45
75K
50
75K
ns
2
t
RL2RL2
t
RC
Read or Write Cycle Time
70
75
80
90
ns
3
t
RH2RL2
t
RP
RAS
Precharge Time
25
25
25
30
ns
4
t
RL1CH1
t
CSH
CAS
Hold Time
35
40
45
50
ns
5
t
CL1CH1
t
CAS
CAS
Pulse Width
7
8
9
9
ns
6
t
RL1CL1
t
RCD
RAS
to
CAS
Delay
16
23
17
28
18
32
19
36
ns
7
t
WH2CL2
t
RCS
Read Command Setup Time
0
0
0
0
ns
4
8
t
AVRL2
t
ASR
Row Address Setup Time
0
0
0
0
ns
9
t
RL1AX
t
RAH
Row Address Hold Time
6
7
8
9
ns
10
t
AVCL2
t
ASC
Column Address Setup Time
0
0
0
0
ns
11
t
CL1AX
t
CAH
Column Address Hold Time
4
5
6
7
ns
12
t
CL1RH1(R)
t
RSH (R)
RAS
Hold Time (Read Cycle)
14
14
15
15
ns
13
t
CH2RL2
t
CRP
CAS
to
RAS
Precharge Time
5
5
5
5
ns
14
t
CH2WX
t
RCH
Read Command Hold Time
0
0
0
0
ns
5
Referenced to
CAS
15
t
RH2WX
t
RRH
Read Command Hold Time
0
0
0
0
ns
5
Referenced to
RAS
16
t
OEL1RH2
t
ROH
RAS
Hold Time
8
8
9
10
ns
Referenced to
OE
17
t
GL1QV
t
OAC
Access Time from
OE
12
12
13
14
ns
18
t
CL1QV
t
CAC
Access Time from
CAS
(EDO)
12
12
13
14
ns
6, 7
19
t
RL1QV
t
RAC
Access Time from
RAS
35
40
45
50
ns
6, 8, 9
20
t
AVQV
t
CAA
Access Time from Column
18
20
22
24
ns
6, 7, 10
Address
21
t
CL1QX
t
LZ
CAS
to Low-Z Output
0
0
0
0
ns
16
22
t
CH2QZ
t
HZ
Output buffer turn-off delay time
0
6
0
6
0
7
0
8
ns
16
23
t
RL1AX
t
AR
Column Address Hold Time
28
30
35
40
ns
from
RAS
24
t
RL1AV
t
RAD
RAS
to Column Address
11
17
12
20
13
23
14
26
ns
11
Delay Time
25
t
CL1RH1(W)
t
RSH (W)
RAS
or
CAS
Hold Time
12
12
13
14
ns
in Write Cycle
26
t
WL1CH1
t
CWL
Write Command to
CAS
12
12
13
14
ns
Lead Time
JEDEC