ChipFind - документация

Электронный компонент: V827332N04SXTL-A1

Скачать:  PDF   ZIP
MOSEL VITELIC
1
V827332N04S
2.5 VOLT 32M x 72 HIGH PERFORMANCE
REGISTERED ECC DDR SDRAM MODULE
PRELIMINARY
V827332N04S Rev. 1.1 May 2002
Features
184 Pin Registered 33,554,432 x 72 bit
Organization DDR SDRAM Modules
Utilizes High Performance 32M x 4 DDR
SDRAM in TSOPII-66 Packages
Single +2.5V ( 0.2V) Power Supply
Programmable CAS Latency, Burst Length, and
Wrap Sequence (Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
All Inputs, Outputs are SSTL-2 Compatible
4096 Refresh Cycles every 64 ms
Serial Presence Detect (SPD)
DDR SDRAM Performance
Description
The V827332N04S memory module is organized
33,554,432 x 72 bits in a 184 pin memory module.
The 32M x 72 memory module uses 18 Mosel-
Vitelic 32M x 4 DDR SDRAM. The x72 modules are
ideal for use in high performance computer systems
where increased memory density and fast access
times are required.
Component Used
-7
-75
-8
Units
t
CK
Clock Frequency
(max.)
143
(PC266A)
133
(PC266B)
125
(PC200)
MHz
t
AC
Clock Access Time
CAS Latency = 2.5
7
7.5
8
ns
Module Speed
A1
PC1600 (100MHz @ CL2)
B0
PC2100B (133MHz @ CL2.5)
B1
PC2100A (133MHz @ CL2)
Standard Module
Low Profile Module
2
MOSEL VITELIC
V827332N04S
V827332N04S Rev. 1.1 May 2002
Part Number Information
V 8 2 73 32 N 0 4 S X T (L) - XX
DDRSDRAM
2.5V
WIDTH
DEPTH
184 PIN Registered
DIMM X4 COMPONENT
REFRESH
RATE 4K
4 BANKS
STTL
COMPONENT
REV LEVEL
COMPONENT
PACKAGE, T = TSOP
Low Profile
SPEED
A1 (100MHZ@CL2)
MOSEL VITELIC
MANUFACTURED
B0 (133MHZ@CL2.5)
B1 (133MHZ@CL2)
MOSEL VITELIC
V827332N04S
3
V827332N04S Rev. 1.1 May 2002
Block Diagram
DQ4
DQ5
DQ6
DQ7
DQ0
DQ1
DQ2
DQ3
DQS0
DQ12
DQ13
DQ14
DQ8
DQ9
DQ10
DQ11
DQS9
DQ20
DQ21
DQ22
DQ23
DQ16
DQ17
DQ18
DQ19
DQS11
DQ28
DQ29
DQ30
DQ31
DQ24
DQ25
DQ26
DQ27
DQS12
DQ36
DQ37
DQ38
DQ39
DQ32
DQ33
DQ34
DQ35
DQS13
DQ44
DQ45
DQ46
DQ47
DQ40
DQ41
DQ42
DQ43
DQS14
DQ52
DQ53
DQ54
DQ55
DQ48
DQ49
DQ50
DQ51
DQ60
DQ61
DQ62
DQ63
DQ56
DQ57
DQ58
DQ59
DQS16
RS0
DQS4
DQS1
DQS5
DQS2
DQS3
DQS15
DQS6
DQS7
DQ15
CB4
CB5
CB6
CB7
CB0
CB1
CB2
CB3
DQS8
DQS17
RAS
CAS
CKE0
BA0-BAN
A0-A13
S0
RS0B
RS0A
RBA0 - RBAn
RA0 - RA12
RRAS
RCAS
RCKE0A
RWE
RCKE0B
BA0 -BAn : SDRAMs DQ0 - D17
A0 -An : SDRAMs D0 - D17
RAS : SDRAMs D0 - D17
CAS : SDRAMs DQ0 - D17
CKE : SDRAMs D0 - D8
CKE : SDRAMs D9 - D17
WE: SDRAMs D0 - D17
R
E
G
I
S
T
E
R
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D8
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D0
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D1
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D2
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D3
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D4
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D5
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D6
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D7
CS
DM
VSS
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D17
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D9
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D10
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D11
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D12
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D13
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D14
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D15
CS
DM
DQS
I/O 3
I/O 2
I/O 1
I/O 0
D16
CS
DM
DQS10
RESET
PCK
PCK
WE
A0
Serial PD
A1
A2
SA0
SA1
SA2
SCL
SDA
WP
V
SS
D0 - D17
D0 - D17
V
DD
/V
DDQ
D0 - D17
D0 - D17
VREF
V
DDSPD
SPD
(DM0)
(DM1)
(DM2)
(DM3)
(DM4)
(DM5)
(DM6)
(DM7)
(DM8)
4
MOSEL VITELIC
V827332N04S
V827332N04S Rev. 1.1 May 2002
Pin Configurations (Front Side/Back Side)
Pin
Front
Pin
Front
Pin
Front
Pin
Back
Pin
Back
Pin
Back
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
VREF
DQ0
VSS
DQ1
DQS0
DQ2
VDD
DQ3
NC
NC
VSS
DQ8
DQ9
DQS1
VDDQ
CK1
CK1
VSS
DQ10
DQ11
CKE0
VDDQ
DQ16
DQ17
DQS2
VSS
A9
DQ18
A7
VDDQ
DQ19
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
A5
DQ24
VSS
DQ25
DQS3
A4
VDD
DQ26
DQ27
A2
Vss
A1
CB0*
CB1*
VDD
DQS8*
A0
CB2*
VSS
CB3*
BA1
Key
DQ32
VDDQ
DQ33
DQS4
DQ34
VSS
BA0
DQ35
DQ40
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
VDDQ
WE
DQ41
CAS
VSS
DQS5
DQ42
DQ43
VDD
NC
DQ48
DQ49
VSS
CK2
CK2
VDDQ
DQS6
DQ50
DQ51
VSS
VDDID
DQ56
DQ57
VDD
DQS7
DQ58
DQ59
VSS
NC
SDA
SCL
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
VSS
DQ4
DQ5
VDDQ
DM0
DQ6
DQ7
VSS
NC
NC
A13*
VDDQ
DQ12
DQ13
DM1
VDD
DQ14
DQ15
CKE1
VDDQ
BA2*
DQ20
A12*
VSS
DQ21
A11
DM2
VDD
DQ22
A8
DQ23
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
VSS
A6
DQ28
DQ29
VDDQ
DM3
A3
DQ30
VSS
DQ31
CB4*
CB5*
VDDQ
CK0*
CK0*
VSS
DM8*
A10
CB6*
VDDQ
CB7*
key
VSS
DQ36
DQ37
VDD
DM4
DQ38
DQ39
VSS
DQ44
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
RAS
DQ45
VDDQ
CS0
CS1
DM5
VSS
DQ46
DQ47
NC
VDDQ
DQ52
DQ53
NC
VDD
DM6
DQ54
DQ55
VDDQ
NC
DQ60
DQ61
VSS
DM7
DQ62
DQ63
VDDQ
SA0
SA1
SA2
VDDSPD
Notes:
* These pins are not used in this module.
Pin Names
Pin Pin
Description
CK1, CK1, CK2, CK2 Differential
Clock
Inputs
CS0
Chip Select Input
CKE0
Clock Enable Input
RAS, CAS, WE Commend
Sets
Inputs
A0 ~ A11
Address
BA0, BA1
Bank Address
DQ0~DQ63 Data
Inputs/Outputs
DQS0~DQS7 Data
Strobe
Inputs/Outputs
DM0~DM7 Data-in
Mask
Key
Key
VDD Power
Supply
VDDQ DQs
Power
Supply
VSS Ground
VREF Reference
Power
Supply
VDDSPD
Power Supply for SPD
SA0~SA2 E
2
PROM Address Inputs
SCL E
2
PROM Clock
SDA E
2
PROM Data I/O
VDDID VDD
Identification
Flag
DU
Do not Use
NC No
Connection
Pin Pin
Description
MOSEL VITELIC
V827332N04S
5
V827332N04S Rev. 1.1 May 2002
Serial Presence Detect Information
Bin Sort:
A1 (PC1600 @ CL2)
B0 (PC2100B @ CL2.5)
B1 (PC2100A @ CL2)
Byte #
Function described
Function Supported
Hex value
A1 B0
B1
A1
B0
B1
0
Defines # of Bytes written into serial memory at module manufacturer
128bytes
80h
1
Total # of Bytes of SPD memory device
256bytes
08h
2
Fundamental memory type
SDRAM DDR
07h
3
# of row address on this assembly
12
0Ch
4
# of column address on this assembly
11
0Bh
5
# of module Rows on this assembly
1 Bank
01h
6
Data width of this assembly
72 bits
48h
7
.........Data width of this assembly
-
00h
8
VDDQ and interface standard of this assembly
SSTL 2.5V
04h
9
DDR SDRAM cycle time at CAS Latency =2.5
8ns
7.5ns
7ns
80h
75h
70h
10
DDR SDRAM Access time from clock at CL=2.5
0.8ns 0.75n 0.75n
80h
75h
75h
11
DIMM configuration type(Non-parity, Parity, ECC)
Non-parity, ECC
02h
12
Refresh rate & type
15.6us & Self refresh
80h
13
Primary DDR SDRAM width
x4
04h
14
Error checking DDR SDRAM data width
x4
04h
15
Minimum clock delay for back-to-back random column
address
t
CCD
=1CLK 01h
16
DDR SDRAM device attributes : Burst lengths supported
2,4,8
0Eh
17
DDR SDRAM device attributes : # of banks on each DDR SDRAM
4 banks
04h
18
DDR SDRAM device attributes : CAS Latency supported
2,2.5
0Ch
19
DDR SDRAM device attributes : CS Latency
0CLK
01h
20
DDR SDRAM device attributes : WE Latency
1CLK
02h
21
DDR SDRAM module attributes
Registered address&
control inputs and On-card
DLL
26h
22
DDR SDRAM device attributes : General
+/-0.2V voltage tolerance
00h
23
DDR SDRAM cycle time at CL =2
10ns
10ns
7.5ns
A0h
A0h
75h
24
DDR SDRAM Access time from clock at CL =2
0.8ns
08n
0.75
80h
80h
75h
25
DDR SDRAM cycle time at CL =1.5
-
-
-
00h
26
DDR SDRAM Access time from clock at CL =1.5
-
-
-
00h
27
Minimum row precharge time (=t
RP
)
20ns 20ns 18ns 50h 50h 48h
28
Minimum row activate to row active delay(=t
RRD
) 15ns
15ns
14ns
3Ch
3Ch
38h
6
MOSEL VITELIC
V827332N04S
V827332N04S Rev. 1.1 May 2002
29
Minimum RAS to CAS delay(=t
RCD
) 20ns
20ns
18ns
50h
50h
48h
30
Minimum active to precharge time(=t
RAS
) 50ns
45ns
45ns
32h
2Dh
2Dh
31
Module Row density
256MB
40h
32
Command and address signal input setup time
1.1ns
0.9ns
0.9ns
B0h
90h
90h
33
Command and address signal input hold time
1.1ns
0.9ns
0.9ns
B0h
90h
90h
34
Data signal input setup time
0.6ns
0.5ns
0.5ns
60h
50h
50h
35
Data signal input hold time
0.6ns
0.5ns
0.5ns
60h
50h
50h
36-40
Superset information (may be used in future)
-
00h
41
SDRAM device minimum active to active/auto-refresh time
(=t
RC
)
70ns 65ns 60ns
46h 41h 3Ch
42
SDRAM device minimum active to autorefresh to active/auto-refresh
time (=t
RFC
)
80ns 75ns 67ns
50h 4Bh 43h
43
SDRAM device maximum device cycle time (=t
CK MAX
)
12ns 12ns 12ns
30h 30h 30h
44
SDRAM device maximum skew between DQS and DQ signals
(=t
DQSQ
)
0.6ns 0.5ns 0.5ns
3Ch 32h 32h
45
SDRAM device maximum read datahold skew factor (=t
QHS
)
1ns 0.75ns
0.75ns
A0h
75h
75h
62
SPD data revision code
Initial release
00h
63
Checksum for Bytes 0 ~ 62
-
F5
3B
DA
64
Manufacturer JEDEC ID code
Mosel Vitelic
40h
65 -71
....... Manufacturer JEDEC ID code
00h
72
Manufacturing location
02=Taiwan 05=China
0A=S-CH
73-90
Module part number (ASCII)
V827332N04S
91
Manufacturer revison code (For PCB)
0
00
92
Manufacturer revison code (For component)
0
00
93
Manufacturing date (Week)
-
-
94
Manufacturing date (Year)
-
-
95~98
Assembly serial #
-
-
99~127 Manufacturer specific data (may be used in future)
Undefined
00h
128~255 Open for customer use
Undefined
00h
Byte #
Function described
Function Supported
Hex value
A1 B0
B1
A1
B0
B1
Serial Presence Detect Information (cont.)
MOSEL VITELIC
V827332N04S
7
V827332N04S Rev. 1.1 May 2002
DC Operating Conditions
(T
A
= 0 to 70C, Voltage referenced to V
SS
= 0V)
Notes: 1. V
DDQ
must not exceed the level of V
DD
.
2. V
IL
(min) is acceptable -1.5V AC pulse width with 5ns of duration.
3. The value of V
REF
is approximately equal to 0.5V
DDQ
.
AC Operating Conditions
(T
A
= 0 to 70 C, Voltage referenced to V
SS
= 0V)
Notes: 1. VID is the magnitude of the difference between the input level on CK and the input on CK.
2. The value of VIX is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the
same.
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
V
DD
2.3
2.5
2.7
V
Power Supply Voltage
V
DDQ
2.3
2.5
2.7
V
1
Input High Voltage
V
IH
V
REF
+ 0.15
-
V
DDQ
+ 0.3
V
Input Low Voltage
V
IL
-0.3
-
V
REF
- 0.15
V
2
I/O Termination Voltage
V
TT
V
REF
- 0.04
V
REF
V
REF
+ 0.04
V
Reference Voltage
V
REF
1.15
1.25
1.35
V
3
Input Leakage Current
I
I
-2
-
2
A
Output Leakage Current
IO
z
-5
-
5
A
Output High Current (V
OUT
= 1.95V)
IO
H
-16.8
-
-
mA
Output Low Current (V
OUT
= 0.35V)
IO
L
16.8
-
-
mA
Parameter Symbol
Min
Max
Unit
Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals
V
IH(AC)
V
REF
+ 0.31
V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals
V
IL(AC)
V
REF
- 0.31
V
Input Differential Voltage, CK and CK inputs
V
ID(AC)
0.7
V
DDQ
+ 0.6
V
1
Input Crossing Point Voltage, CK and CK inputs
V
IX(AC)
0.5*V
DDQ-0.2
0.5*V
DDQ+0.2
V
2
8
MOSEL VITELIC
V827332N04S
V827332N04S Rev. 1.1 May 2002
AC Operating Test Conditions
(T
A
= 0 to 70C, Voltage referenced to V
SS
= 0V)
Input/Output Capacitance
(V
DD
= 2.5V, V
DDQ
= 2.5V, T
A
= 25C, f = 1MHz)
Parameter Value
Unit
Reference Voltage
V
DDQ
x 0.5
V
Termination Voltage
V
DDQ
x 0.5
V
AC Input High Level Voltage (V
IH
, min)
V
REF
+ 0.31
V
AC Input Low Level Voltage (V
IL
, max)
V
REF
- 0.31
V
Input Timing Measurement Reference Level Voltage
V
REF
V
Output Timing Measurement Reference Level Voltage
V
TT
V
Input Signal maximum peak swing
1.5
V
Input minimum Signal Slew Rate
1
V/ns
Termination Resistor (R
T
) 50
Ohm
Series Resistor (R
S
)
25 Ohm
Output Load Capacitance for Access Time Measurement (C
L
) 30
pF
Parameter
Symbol Min
Max
Unit
Input capacitance (A
0
~ A
11
, BA
0
~ BA
1
, RAS, CAS, WE) CIN
1
60 75
pF
Input capacitance (CKE
0
) CIN
2
40
48
pF
Input capacitance (CS
0
) CIN
3
40
48
pF
Input capacitance (CLK
1
, CLK
2
) CIN
4
30
32
pF
Data & DQS input/output capacitance (DQ
0
~DQ
63
) C
OUT
10
12
pF
Input capacitance (DM0~DM8)
CIN
5
10
12
pF
Output Load Circuit (SSTL_2)
Output
Z0=50
C
LOAD
=30pF
V
REF
=0.5*V
DDQ
R
T
=50
V
tt
=0.5*V
DDQ
MOSEL VITELIC
V827332N04S
9
V827332N04S Rev. 1.1 May 2002
DDR SDRAM I
DD
SPEC TABLE
* Module I
DD
was calculated on the basis of component I
DD
and can be differently measured according to DQ loading cap.
Detailed test conditions for DDR SDRAM IDD1 & IDD
IDD1 : Operating current: One bank operation
1. Typical Case : Vdd = 2.5V, T=25' C
2. Worst Case : Vdd = 2.7V, T= 10' C
3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once
per clock cycle. lout = 0mA
4. Timing patterns
- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRCD = 2*tCK, tRAS = 5*tCK
Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
Symbol
A1(PC1600@CL=2) B0(PC2100B@CL=2.5)
B1(PC2100A@CL=2)
Unit
Typical
Worst
Typical
Worst
Typical
Worst
IDD0
1450
1440
1350
1440
1080
1170
mA
IDD1
1650
1710
1575
1710
1280
1395
mA
IDD2P
750
720
675
720
540
585
mA
IDD2F
895
945
655
945
720
765
mA
IDD2Q
830
810
765
810
630
675
mA
IDD3P
980
765
720
765
585
630
mA
IDD3N
900
990
900
990
720
810
mA
IDD4R
1980
2250
1980
2250
1620
1845
mA
IDD4W
2115
2385
2115
2385
1710
1890
mA
IDD5
2115
2385
2115
2385
1710
1890
mA
IDD6
Normal
36
36
36
36
36
36
mA
Low power
18
18
18
18
18
18
mA
IDD7
3375
3825
3375
3825
2745
3150
mA
10
MOSEL VITELIC
V827332N04S
V827332N04S Rev. 1.1 May 2002
AC Characteristics
(AC operating conditions unless otherwise noted)
Parameter Symbol
(PC2100A) (PC2100B) (PC1600)
Unit Note
Min Max Min Max Min Max
Row Cycle Time
t
RC
60
- 65 - 70 - ns
Auto Refresh Row Cycle Time
t
RFC
67
- 75 - 80 - ns
Row Active Time
t
RAS
45 120K 48 120K 50 120K
ns
Row Address to Column Address Delay
t
RCD
18 - 20 - 20 - ns
Row Active to Row Active Delay
t
RRD
14
-
15
-
15
-
ns
Column Address to Column Address Delay
t
CCD
1 - 1 - 1 -
CLK
Row Precharge Time
t
RP
18
- 20 - 20 - ns
Write Recovery Time
t
WR
15 - 15 - 15 - ns
Last Data-In to Read Command
t
DRL
1 - 1 - 1 -
CLK
Auto Precharge Write Recovery + Precharge Time
t
DAL
35 - 35 - 35 - ns
System Clock Cycle Time
CAS Latency = 2.5
t
CK
7 12
7.5 12 8 12
ns
CAS Latency = 2
7.5
12
10
12
10
12
ns
Clock High Level Width
t
CH
0.45 0.55 0.45 0.55 0.45 0.55
CLK
Clock Low Level Width
t
CL
0.45 0.55 0.45 0.55 0.45 0.55
CLK
Data-Out edge to Clock edge Skew
t
AC
-0.75 0.75 -0.75 0.75 -0.8 0.8 ns
DQS-Out edge to Clock edge Skew
t
DQSCK
-0.75 0.75 -0.75 0.75 -0.8 0.8 ns
DQS-Out edge to Data-Out edge Skew
t
DQSQ
- 0.5 -
0.5
- 0.6
ns
Data-Out hold time from DQS
t
QH
t
HPmin
-0.75ns
- t
HPmin
-0.75ns
- t
HPmin
-0.75ns
- ns 1
Clock Half Period
t
HP
t
CH/L
min
- t
CH/L
min
- t
CH/L
min
- ns 1
Input Setup Time (fast slew rate)
t
IS
0.9 - 0.9 - 1.1 - ns
2,3,5,6
Input Hold Time (fast slew rate)
t
IH
0.9 - 0.9 - 1.1 - ns
2,3,5,6
Input Setup Time (slow slew rate)
t
IS
1.0 - 1.0 - 1.1 - ns
2,4,5,6
Input Hold Time (slow slew rate)
t
IH
1.0 - 1.0 - 1.1 - ns
2,4,5,6
Input Pulse Width
t
IPW
2.2 - 2.2 - - -
ns
6
Write DQS High Level Width
t
DQSH
0.4 0.6 0.4 0.6 0.4 0.6
CLK
Write DQS Low Level Width
t
DQSL
0.4 0.6 0.4 0.6 0.4 0.6
CLK
CLK to First Rising edge of DQS-In
t
DQSS
0.75 1.25 0.75 1.25 0.75 1.25
CLK
Data-In Setup Time to DQS-In (DQ & DM)
t
DS
0.5 - 0.5 - 0.6 - ns 7
Data-in Hold Time to DQS-In (DQ & DM)
t
DH
0.5 - 0.5 - 0.6 - ns 7
DQ & DM Input Pulse Width
t
DIPW
1.75 -
1.75
- 2 -
ns
Read DQS Preamble Time
t
RPRE
0.9 1.1 0.9 1.1 0.9 1.1
CLK
Read DQS Postamble Time
t
RPST
0.4 0.6 0.4 0.6 0.4 0.6
CLK
MOSEL VITELIC
V827332N04S
11
V827332N04S Rev. 1.1 May 2002
AC Characteristics (cont.)
Notes: 1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter.
2. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, CS, RAS, CAS, WE.
3. For command/address input slew rate >=1.0V/ns
4. For command/address input slew rate >=0.5V/ns and <1.0V/ns
5. CK, CK slew rates are >=1.0V/ns
6. These parameters guarantee device timing, but they are not necessarily tested on each device, and they may be guaranteed
by design or tester correlation.
7. Data latched at both rising and falling edges of Data Strobes(DQS) : DQ, DM
8. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete
Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM.
Absolute Maximum Ratings
Note: Operation at above absolute maximum rating can adversely affect device reliability
Write DQS Preamble Setup Time
t
WPRES
0 - 0 - 0 -
CLK
Write DQS Preamble Hold Time
t
WPREH
0.25 - 0.25 - 0.25 -
CLK
Write DQS Postamble Time
t
WPST
0.4 0.6 0.4 0.6 0.4 0.6
CLK
Mode Register Set Delay
t
MRD
2 - 2 - 2 -
CLK
Power Down Exit Time
t
PDEX
10 - 10 - 10 - ns
Exit Self Refresh to Non-Read Command
t
XSNR
75 - 75 - 80 - ns
Exit Self Refresh to Read Command
t
XSRD
200 - 200 - 200 -
CLK
8
Average Periodic Refresh Interval
t
REFI
- 15.6 - 15.6 - 15.6
us
Parameter Symbol
Rating
Unit
Ambient Temperature
T
A
0
~
70
C
Storage Temperature
T
STG
-55 ~ 125
C
Voltage on Any Pin relative to V
SS
V
IN
, V
OUT
-0.5 ~ 3.6
V
Voltage on V
DD
relative to V
SS
V
DD
-0.5 ~ 3.6
V
Voltage on V
DDQ
relative to V
SS
V
DDQ
-0.5 ~ 3.6
V
Output Short Circuit Current
I
OS
50 mA
Power Dissipation
P
D
8 W
Soldering Temperature Time
T
SOLDER
260 10
C Sec
Parameter Symbol
(PC2100A) (PC2100B) (PC1600)
Unit Note
Min Max Min Max Min Max
12
MOSEL VITELIC
V827332N04S
V827332N04S Rev. 1.1 May 2002
Module Dimensions (Standard)
NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted.
MIN
1.705 (43.31)
1.695 (43.05)
PIN 1
.700 (17.78)
TYP.
.098 (2.50) D
(2X)
.091 (2.30) TYP.
.250 (6.35) TYP.
4.750 (120.65)
.050 (1.27)
TYP.
.091 (2.30)
TYP.
.040 (1.02)
TYP.
.079 (2.00) R
(4X)
.035 (0.90) R
PIN 92
FRONT VIEW
.054 (1.37)
.046 (1.17)
5.256 (133.50)
5.244 (133.20)
2.55 (64.77)
1.95 (49.53)
.394 (10.00)
TYP.
.125 (3.175)
MAX
BACK VIEW
PIN 184
PIN 93
U1
U2
U3
U4
U5
U11
U12
U6
U7
U13
U8
U9
U10
U14
U15
U16
U17
U18
U19
U20
U21
U22
MOSEL VITELIC
V827332N04S
13
V827332N04S Rev. 1.1 May 2002
Module Dimensions (Low Profile)
NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted.
MIN
U1
U2
U3
U4
U11
U12
U5
U6
U7
U8
U9
U14
U15
U16
U17
U18
U13
U10
U19
U20
U21
U22
.054 (1.37)
.046 (1.17)
.125 (3.175)
MAX
1.205 (30.61)
1.195 (30.35)
PIN 1
.700 (17.78)
TYP.
.098 (2.50) D
(2X)
.091 (2.30) TYP.
.250 (6.35) TYP.
4.750 (120.65)
.050 (1.27)
TYP.
.091 (2.30)
TYP.
.040 (1.02)
TYP.
.079 (2.00) R
(4X)
.035 (0.90) R
PIN 92
FRONT VIEW
5.256 (133.50)
5.244 (133.20)
2.55 (64.77)
1.95 (49.53)
.394 (10.00)
TYP.
BACK VIEW
PIN 184
PIN 93
14
MOSEL VITELIC
V827332N04S
V827332N04S Rev. 1.1 May 2002
Label Information
C
L
= 2.5 (CLK)
t
RCD
= 3 (CLK)
t
RP
= 3 (CLK)
2533
R
REGISTERED DIMM
PC2100
08
SPD Revision 0
0
V827332N04SXXX-XX 256MB
PC2100R-2533-080-A
XXXX-XXXXXXX
Assembly in Taiwan
A
Gerber file JEDEC
-
-
-
MOSEL VITELIC
Part Number
Module Density
DIMM manufacture date code
Criteria of PC2100 or PC1600
(refer to MVI datasheet)
MOSEL VITELIC
V827332N04S
15
V827332N04S Rev. 1.1 May 2002
WORLDWIDE OFFICES
Copyright , MOSEL VITELIC Corp.
Printed in U.S.A.
The information in this document is subject to change without
notice.
MOSEL VITELIC makes no commitment to update or keep cur-
rent the information contained in this document. No part of this
document may be copied or reproduced in any form or by any
means without the prior written consent of MOSEL-VITELIC.
MOSEL VITELIC subjects its products to normal quality control
sampling techniques which are intended to provide an assurance
of high quality products suitable for usual commercial applica-
tions. MOSEL VITELIC does not do testing appropriate to provide
100% product quality assurance and does not assume any liabil-
ity for consequential or incidental arising from any use of its prod-
ucts. If such products are to be used in applications in which
personal injury might occur from failure, purchaser must do its
own quality assurance testing appropriate to such applications.
U.S. SALES OFFICES
U.S.A.
3910 NORTH FIRST STREET
SAN JOSE, CA 95134
PHONE: 408-433-6000
FAX: 408-433-0952
TAIWAN
7F, NO. 102
MIN-CHUAN E. ROAD, SEC. 3
TAIPEI
PHONE: 886-2-2545-1213
FAX: 886-2-2545-1209
NO 19 LI HSIN ROAD
SCIENCE BASED IND. PARK
HSIN CHU, TAIWAN, R.O.C.
PHONE: 886-3-579-5888
FAX: 886-3-566-5888
SINGAPORE
10 ANSON ROAD #23-13
INTERNATIONAL PLAZA
SINGAPORE 079903
PHONE: 65-6323-1801
FAX: 65-6323-7013
JAPAN
ONZE 1852 BUILDING 6F
2-14-6 SHINTOMI, CHUO-KU
TOKYO 104-0041
PHONE: 03-3537-1400
FAX: 03-3537-1402
UK & IRELAND
SUITE 50, GROVEWOOD
BUSINESS CENTRE
STRATHCLYDE BUSINESS
PARK
BELLSHILL, LANARKSHIRE,
SCOTLAND, ML4 3NQ
PHONE: 44-1698-748515
FAX: 44-1698-748516
WEST
3910 NORTH FIRST STREET
SAN JOSE, CA 95134
PHONE: 408-433-6000
FAX: 408-433-0952
CENTRAL / EAST
604 FIELDWOOD CIRCLE
RICHARDSON, TX 75081
PHONE: 214-352-3775
FAX: 214-904-9029