1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BC
546
BC
547
BC
548
Unit
Collector Emitter Voltage
VCEO
65
45
30
Vdc
Collector Base Voltage
VCBO
80
50
30
Vdc
Emitter Base Voltage
VEBO
6.0
Vdc
Collector Current -- Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watt
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
BC546
(IC = 1.0 mA, IB = 0)
BC547
BC548
V(BR)CEO
65
45
30
--
--
--
--
--
--
V
Collector Base Breakdown Voltage
BC546
(IC = 100
Adc)
BC547
BC548
V(BR)CBO
80
50
30
--
--
--
--
--
--
V
Emitter Base Breakdown Voltage
BC546
(IE = 10
m
A, IC = 0)
BC547
BC548
V(BR)EBO
6.0
6.0
6.0
--
--
--
--
--
--
V
Collector Cutoff Current
(VCE = 70 V, VBE = 0)
BC546
(VCE = 50 V, VBE = 0)
BC547
(VCE = 35 V, VBE = 0)
BC548
(VCE = 30 V, TA = 125
C)
BC546/547/548
ICES
--
--
--
--
0.2
0.2
0.2
--
15
15
15
4.0
nA
A
Order this document
by BC546/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC546, B
BC547, A, B, C
BC548, A, B, C
CASE 2904, STYLE 17
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
REV 1
BC546, B BC547, A, B, C BC548, A, B, C
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10
A, VCE = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
(IC = 2.0 mA, VCE = 5.0 V)
BC546
BC547
BC548
BC547A/548A
BC546B/547B/548B
BC547C/BC548C
(IC = 100 mA, VCE = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
hFE
--
--
--
110
110
110
110
200
420
--
--
--
90
150
270
--
--
--
180
290
520
120
180
300
--
--
--
450
800
800
220
450
800
--
--
--
--
Collector Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
(IC = 10 mA, IB = See Note 1)
VCE(sat)
--
--
--
0.09
0.2
0.3
0.25
0.6
0.6
V
Base Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
VBE(sat)
--
0.7
--
V
BaseEmitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
0.55
--
--
--
0.7
0.77
V
SMALLSIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
BC546
BC547
BC548
fT
150
150
150
300
300
300
--
--
--
MHz
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cobo
--
1.7
4.5
pF
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Cibo
--
10
--
pF
SmallSignal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
BC546
BC547/548
BC547A/548A
BC546B/547B/548B
BC547C/548C
hfe
125
125
125
240
450
--
--
220
330
600
500
900
260
500
900
--
Noise Figure
(IC = 0.2 mA, VCE = 5.0 V, RS = 2 k
W
,
BC546
f = 1.0 kHz,
f = 200 Hz)
BC547
BC548
NF
--
--
--
2.0
2.0
2.0
10
10
10
dB
Note 1: IB is value for which IC = 11 mA at VCE = 1.0 V.
BC546, B BC547, A, B, C BC548, A, B, C
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. "Saturation" and "On" Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2
0.5
1.0
10
20
50
0.2
100
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
2.0
5.0
200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
h
FE
, NORMALIZED DC CURRENT
GAIN
V
, VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (V)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.5
1.0
10
20
50
2.0
100
70
30
7.0
5.0
3.0
0.7
0.3
0.1
0.2
1.0
10
100
TA = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25
C
55
C to +125
C
TA = 25
C
IC = 50 mA
IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
BC547/BC548
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4
0.6
1.0
10
20
1.0
2.0
6.0
40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7
1.0
10
20
2.0
50
30
7.0
5.0
3.0
0.5
VCE = 10 V
TA = 25
C
C, CAP
ACIT
ANCE (pF)
f
, CURRENTGAIN BANDWIDTH PRODUCT
(MHz)
T
0.8
4.0
8.0
TA = 25
C
Cob
Cib
BC546, B BC547, A, B, C BC548, A, B, C
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
BC547/BC548
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. "On" Voltage
IC, COLLECTOR CURRENT (mA)
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1
1.0
10
100
0.2
0.2
0.5
0.2
1.0
10
200
TA = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.0
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
0.2
2.0
10
200
1.0
TA = 25
C
200 mA
50 mA
IC =
10 mA
h
FE
, DC CURRENT
GAIN (NORMALIZED)
V
, VOL
T
AGE (VOL
TS)
VCE = 5 V
TA = 25
C
0
0.5
2.0
5.0
20
50
100
0.05
0.2
0.5
2.0
5.0
100 mA
20 mA
1.4
1.8
2.2
2.6
3.0
0.5
5.0
20
50
100
55
C to 125
C
VB for VBE
BC546
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1
0.2
1.0
50
2.0
2.0
10
100
100
200
500
50
20
20
10
6.0
4.0
1.0
10
50 100
5.0
VCE = 5 V
TA = 25
C
C, CAP
ACIT
ANCE (pF)
f
, CURRENTGAIN BANDWIDTH PRODUCT T
0.5
5.0
20
TA = 25
C
Cob
Cib
BC546, B BC547, A, B, C BC548, A, B, C
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
CASE 02904
(TO226AA)
ISSUE AD
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
BC546, B BC547, A, B, C BC548, A, B, C
6
Motorola SmallSignal Transistors, FETs and Diodes Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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BC546/D
*BC546/D*
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