1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use as highfrequency drivers in audio amplifiers.
DC Current Gain Specified to 5.0 Amperes
hFE = 50 (Min) @ IC = 0.5 Adc
hFE
= 10 (Min) @ IC = 2.0 Adc
CollectorEmitter Sustaining Voltage --
VCEO(sus)
= 250 Vdc (Min) -- MJE15032, MJE15033
High Current Gain -- Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
TO220AB Compact Package
MAXIMUM RATINGS
Rating
Symbol
MJE15032
MJE15033
Unit
CollectorEmitter Voltage
VCEO
250
Vdc
CollectorBase Voltage
VCB
250
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
-- Peak
IC
8.0
16
Adc
Base Current
IB
2.0
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
50
0.40
Watts
W/
_
C
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
PD
2.0
0.016
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
2.5
_
C/W
Thermal Resistance, Junction to Ambient
R
JA
62.5
_
C/W
0
Figure 1. Power Derating
T, TEMPERATURE (
C)
0
40
60
100
120
160
40
TC
20
60
P
D
, POWER DISSIP
A
TION (W
A
TTS)
0
2.0
TA
1.0
3.0
80
140
TC
TA
20
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE15032/D
Motorola, Inc. 1997
MJE15032
MJE15033
*Motorola Preferred Device
8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY
SILICON
250 VOLTS
50 WATTS
*
NPN
PNP
*
CASE 221A06
TO220AB
MJE15032 MJE15033
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
MJE15032, MJE15033
VCEO(sus)
250
--
Vdc
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
MJE15032, MJE15033
ICBO
--
10
Adc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
10
Adc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.5 Adc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
50
50
10
--
--
--
--
CollectorEmitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
--
0.5
Vdc
BaseEmitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
VBE(on)
--
1.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain -- Bandwidth Product (2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
30
--
MHz
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
(2) fT =
hfe
ftest.
t, TIME (ms)
0.01
0.01
0.05
1.0
2.0
5.0
10
20
50
500
1.0 k
0.1
0.5
0.2
1.0
0.2
0.1
0.05
r(t)
, TRANSIENT
THERMAL
Z
JC(t) = r(t) R
JC
R
JC = 1.56
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) Z
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
SINGLE PULSE
RESIST
ANCE (NORMALIZED)
Figure 2. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.02
100
200
0.1
0.02
0.01
MJE15032 MJE15033
3
Motorola Bipolar Power Transistor Device Data
250 ms
100
s
50 ms
10 ms
100
1.0
Figure 3. MJE15032 & MJE15033
Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
0.01
I C
, COLLECT
OR
CURRENT
(AMPS)
10
1000
1.0
100
0.1
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
The data of Figures 3 and 4 is based on TJ(pk) = 150
_
C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_
C. TJ(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
25
C
150
C
55
C
1000
0.1
Figure 4. NPN -- MJE15032
VCE = 5 V DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
1.0
h
FE
, DC CURRENT
GAIN
10
100
10
1.0
Figure 5. PNP -- MJE15033
VCE = 5 V DC Current Gain
Figure 6. NPN -- MJE15032
VCE = 5 V VBE(on) Curve
IC, COLLECTOR CURRENT (AMPS)
1.0
10
1.0
10
V
,
VOL
T
AGE
(VOL
TS)
0.1
0.1
Figure 7. PNP -- MJE15033
VCE = 5 V VBE(on) Curve
IC, COLLECTOR CURRENT (AMPS)
10
V
,
VOL
T
AGE
(VOL
TS)
1.0
10
0.1
0.1
1.0
NPN -- MJE15032
PNP -- MJE15033
25
C
150
C
55
C
25
C
150
C
55
C
1000
0.1
IC, COLLECTOR CURRENT (AMPS)
1.0
h
FE
, DC CURRENT
GAIN
10
100
10
1.0
25
C
150
C
55
C
MJE15032 MJE15033
4
Motorola Bipolar Power Transistor Device Data
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
V
,
VOL
T
AGE
(VOL
TS)
Figure 8. NPN -- MJE15032
VCE(sat) IC/IB = 10
Figure 9. PNP -- MJE15033
VCE(sat) IC/IB = 10
1.0
10
10
0.1
0.1
0.01
1.0
0.1
IC, COLLECTOR CURRENT (AMPS)
100
10
1.0
0.1
0.01
V
,
VOL
T
AGE
(VOL
TS)
NPN -- MJE15032
PNP -- MJE15033
100
1.0
0.1
0.01
V
,
VOL
T
AGE
(VOL
TS)
V
,
VOL
T
AGE
(VOL
TS)
Figure 10. NPN -- MJE15032
VCE(sat) IC/IB = 20
Figure 11. PNP -- MJE15033
VCE(sat) IC/IB = 20
10
0.1
1.0
10
1.0
0.1
IC, COLLECTOR CURRENT (AMPS)
10
1.0
0.1
V
Figure 12. NPN -- MJE15032
VBE(sat) IC/IB = 10
Figure 13. PNP -- MJE15033
VBE(sat) IC/IB = 10
10
1.0
10
25
C
150
C
55
C
25
C
150
C
55
C
25
C
150
C
55
C
IC, COLLECTOR CURRENT (AMPS)
100
1.0
0.1
0.01
10
0.1
1.0
10
25
C
150
C
55
C
, BASE EMITTER VOL
T
AGE
(VOL
TS)
BE
0.1
IC, COLLECTOR CURRENT (AMPS)
10
1.0
0.1
V
10
1.0
, BASE EMITTER VOL
T
AGE
(VOL
TS)
BE
25
C
150
C
55
C
25
C
150
C
55
C
MJE15032 MJE15033
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
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