1
Motorola Bipolar Power Transistor Device Data
Designer's
TM
Data Sheet
SWITCHMODE
TM
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18002 have an applications specific stateoftheart die designed
for use in 220 V line operated Switchmode Power supplies and electronic light
ballasts. These high voltage/high speed transistors offer the following:
Improved Efficiency Due to Low Base Drive Requirements:
-- High and Flat DC Current Gain hFE
-- Fast Switching
-- No Coil Required in Base Circuit for TurnOff (No Current Tail)
Tight Parametric Distributions are Consistent LottoLot
Two Package Choices: Standard TO220 or Isolated TO220
MJF18002, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Symbol
MJE18002
MJF18002
Unit
CollectorEmitter Sustaining Voltage
VCEO
450
Vdc
CollectorEmitter Breakdown Voltage
VCES
1000
Vdc
EmitterBase Voltage
VEBO
9.0
Vdc
Collector Current -- Continuous
-- Peak(1)
IC
ICM
2.0
5.0
Adc
Base Current -- Continuous
-- Peak(1)
IB
IBM
1.0
2.0
Adc
RMS Isolated Voltage(2)
Test No. 1 Per Fig. 1
(for 1 sec, R.H. < 30%,
Test No. 2 Per Fig. 2
TC = 25
C)
Test No. 3 Per Fig. 3
VISOL
--
--
--
4500
3500
1500
V
Total Device Dissipation
(TC = 25
C)
Derate above 25
C
PD
50
0.4
25
0.2
Watts
W/
C
Operating and Storage Temperature
TJ, Tstg
65 to 150
C
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18002
MJF18002
Unit
Thermal Resistance -- Junction to Case
-- Junction to Ambient
R
JC
R
JA
2.5
62.5
5.0
62.5
C/W
Maximum Lead Temperature for Soldering
Purposes:
1/8
from Case for 5 Seconds
TL
260
C
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
450
--
--
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
--
--
100
Adc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
TC = 125
C
Collector Cutoff Current
(VCE = 800 V, VEB = 0)
TC = 125
C
ICES
--
--
--
--
--
--
100
500
100
Adc
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
IEBO
--
--
100
Adc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
10%.
(continued)
(2) Proper strike and creepage distance must be provided.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18002/D
Motorola, Inc. 1995
MJE18002
MJF18002
POWER TRANSISTOR
2.0 AMPERES
1000 VOLTS
25 and 50 WATTS
CASE 221A06
TO220AB
MJE18002
CASE 221D02
ISOLATED TO220 TYPE
UL RECOGNIZED
MJF18002
*
*
*Motorola Preferred Device
REV 1
MJE18002 MJF18002
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS -- continued
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
BaseEmitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
BaseEmitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.2 Adc)
VBE(sat)
--
--
0.825
0.92
1.1
1.25
Vdc
CollectorEmitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 125
C
(IC = 1.0 Adc, IB = 0.2 Adc)
@ TC = 125
C
VCE(sat)
--
--
--
--
0.2
0.2
0.25
0.3
0.5
0.5
0.5
0.6
Vdc
DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc)
@ TC = 125
C
DC Current Gain
(IC = 0.4 Adc, VCE = 1.0 Vdc)
@ TC = 125
C
DC Current Gain
(IC = 1.0 Adc, VCE = 1.0 Vdc)
@ TC = 125
C
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
hFE
14
--
11
11
6.0
5.0
10
--
27
17
20
8.0
8.0
20
34
--
--
--
--
--
--
--
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
--
13
--
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
35
60
pF
Input Capacitance (VEB = 8.0 V)
Cib
--
400
600
pF
Dynamic Saturation:
determined 1.0
s and
3.0
s after rising IB1
reach 0.9 final IB1
(see Figure 18)
IC = 0.4 A
IB1 = 40 mA
VCC = 300 V
1.0
s
@ TC = 125
C
VCE(dsat)
--
--
3.5
8.0
--
--
Vdc
determined 1.0
s and
3.0
s after rising IB1
reach 0.9 final IB1
(see Figure 18)
IB1 = 40 mA
VCC = 300 V
3.0
s
@ TC = 125
C
--
--
1.5
3.8
--
--
reach 0.9 final IB1
(see Figure 18)
IC = 1.0 A
IB1 = 0.2 A
VCC = 300 V
1.0
s
@ TC = 125
C
--
--
8.0
14
--
--
IB1 = 0.2 A
VCC = 300 V
3.0
s
@ TC = 125
C
--
--
2.0
7.0
--
--
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
10%, Pulse Width = 20
s)
TurnOn Time
IC = 0.4 Adc
IB1 = 40 mAdc
IB2 = 0.2 Adc
VCC = 300 V
@ TC = 125
C
ton
--
--
200
130
300
--
ns
TurnOff Time
IB2 = 0.2 Adc
VCC = 300 V
@ TC = 125
C
toff
--
--
1.2
1.5
2.5
--
s
TurnOn Time
IC = 1.0 Adc
IB1 = 0.2 Adc
IB2 = 0.5 Adc
VCC = 300 V
@ TC = 125
C
ton
--
--
85
95
150
--
ns
TurnOff Time
IB2 = 0.5 Adc
VCC = 300 V
@ TC = 125
C
toff
--
--
1.7
2.1
2.5
--
s
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200
H)
Fall Time
IC = 0.4 Adc, IB1 = 40 mAdc,
IB2 = 0.2 Adc
@ TC = 125
C
tfi
--
--
125
120
200
--
ns
Storage Time
@ TC = 125
C
tsi
--
--
0.7
0.8
1.25
--
s
Crossover Time
@ TC = 125
C
tc
--
--
110
110
200
--
ns
Fall Time
IC = 1.0 Adc, IB1 = 0.2 Adc,
IB2 = 0.5 Adc
@ TC = 125
C
tfi
--
--
110
120
175
--
ns
Storage Time
@ TC = 125
C
tsi
--
--
1.7
2.25
2.75
--
s
Crossover Time
@ TC = 125
C
tc
--
--
200
250
300
--
ns
Fall Time
IC = 0.4 Adc, IB1 = 50 mAdc,
IB2 = 50 mAdc
@ TC = 125
C
tfi
--
--
140
185
200
--
ns
Storage Time
@ TC = 125
C
tsi
--
--
2.2
2.5
3.0
--
s
Crossover Time
@ TC = 125
C
tc
--
--
140
220
250
--
ns
MJE18002 MJF18002
3
Motorola Bipolar Power Transistor Device Data
C, CAP
ACIT
ANCE (pF)
0
1
2
0.001
0.010
0.100
1.000
h
FE
, DC CURRENT
GAIN
1
10
100
0.01
0.10
1.00
10.00
Figure 1. DC Current Gain @ 1 Volt
1
10
100
0.01
0.10
1.00
10.00
0.01
0.10
1.00
10.00
0.01
0.10
1.00
10.00
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.01
0.10
1.00
10.00
1
10
100
1000
1
10
100
1000
TYPICAL STATIC CHARACTERISTICS
TJ = 25
C
TJ = 125
C
IC/IB = 10
IC/IB = 5
h
FE
, DC CURRENT
GAIN
V
CE
, VOL
T
AGE (VOL
TS)
V
CE
, VOL
T
AGE (VOL
TS)
V
BE
, VOL
T
AGE (VOL
TS)
0.01
0.10
1.00
10.00
IC, COLLECTOR CURRENT (AMPS)
VCE = 1 V
TJ = 125
C
TJ = 25
C
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 5 Volts
VCE = 5 V
TJ = 125
C
TJ = 25
C
TJ = 20
C
0.01
0.10
1.00
10.00
0.001
0.010
0.100
1.000
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
TJ = 25
C
IC = 0.2 A
0.4 A
1 A
1.5 A
2 A
IC, COLLECTOR CURRENT (AMPS)
Figure 4. CollectorEmitter Saturation Voltage
IC/IB = 10
IC/IB = 5
0.01
0.10
1.00
10.00
0.01
0.10
1.00
10.00
IC, COLLECTOR CURRENT (AMPS)
Figure 5. BaseEmitter Saturation Region
TJ = 25
C
TJ = 125
C
1
10
100
1000
VCE, COLLECTOREMITTER (VOLTS)
Figure 6. Capacitance
Cib
Cob
TJ = 25
C
f = 1 MHz
MJE18002 MJF18002
4
Motorola Bipolar Power Transistor Device Data
hFE, FORCED GAIN
t si
, ST
ORAGE
TIME (ns)
IC, COLLECTOR CURRENT (AMPS)
0
500
1000
1500
2000
2500
5
7
9
11
13
15
0
500
1000
1500
2000
2500
3000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
500
1000
1500
2000
2500
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
50
100
150
200
250
300
350
400
450
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
100
200
300
400
500
600
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
t,
TIME (ns)
t,
TIME (ns)
t,
TIME (ns)
t,
TIME (ns)
t,
TIME (ns)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Resistive Switching, ton
IC/IB = 5
IC/IB = 10
TJ = 125
C
TJ = 25
C
IB(off) = IC/2
VCC = 300 V
PW = 20
s
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Resistive Switching, toff
IB(off) = IC/2
VCC = 300 V
PW = 20
s
TJ = 25
C
TJ = 125
C
IC/IB = 10
IC/IB = 5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Figure 9. Inductive Storage Time, tsi
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
H
TJ = 25
C
TJ = 125
C
IC/IB = 5
IC/IB = 10
5
7
9
11
13
15
Figure 10. Inductive Storage Time
TJ = 25
C
TJ = 125
C
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
H
IC = 1 A
IC = 0.4 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
H
TJ = 25
C
TJ = 125
C
tc
tfi
tc
tfi
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, tc & tfi, IC/IB = 5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Inductive Switching, tc & tfi, IC/IB = 10
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
H
TJ = 25
C
TJ = 125
C
tc
tfi
tc
tfi
MJE18002 MJF18002
5
Motorola Bipolar Power Transistor Device Data
0.01
0.10
1.00
10.00
10
100
1000
60
80
100
120
140
160
180
5
6
7
8
9
10
11
12
13
14
15
0
0.2
0.4
0.6
0.8
1.0
20
40
60
80
100
120
140
160
POWER DERA
TING F
ACT
OR
0
0.5
1.0
1.5
2.0
2.5
0
200
400
600
800
1000
1200
50
70
90
110
130
150
170
190
210
230
250
5
6
7
8
9
10
11
12
13
14
15
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate ICVCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 15 is based
on TC = 25
C; TJ(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when TC > 25
C. Second break-
down limitations do not derate the same as thermal limita-
tions. Allowable current at the voltages shown on Figure 15
may be found at any case temperature by using the appropri-
ate curve on Figure 17. TJ(pk) may be calculated from the
data in Figures 20 and 21. At any case temperatures, thermal
limitations will reduce the power that can be handled to val-
ues less the limitations imposed by second breakdown. For
inductive loads, high voltage and current must be sustained
simultaneously during turnoff with the base to emitter junc-
tion reverse biased. The safe level is specified as a reverse
biased safe operating area (Figure 16). This rating is verified
under clamped conditions so that the device is never sub-
jected to an avalanche mode.
t fi
, F
ALL
TIME (ns)
T
C
, CROSS-OVER
TIME (ns)
I C
, COLLECT
OR CURRENT
(AMPS)
I C
, COLLECT
OR CURRENT
(AMPS)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
5
6
7
8
9
10
11
12
13
14
15
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
TJ = 25
C
TJ = 125
C
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
H
IC = 1 A
5
6
7
8
9
10
11
12
13
14
15
hFE, FORCED GAIN
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
IC = 1 A
IC = 0.4 A
IC = 0.4 A
TJ = 25
C
TJ = 125
C
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200
H
10
100
1000
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
1
s
10
s
50
s
1 ms
5 ms
DC (MJE18002)
DC (MJF18002)
0
200
400
600
800
1000
1200
Figure 16. Reverse Bias Switching Safe
Operating Area
TC
125
C
IC/IB
4
LC = 500
H
VBE(off) = 0.5 V
0 V
1.5 V
20
40
60
80
100
120
160
140
TC, CASE TEMPERATURE (
C)
Figure 17. Forward Bias Power Derating
SECOND
BREAKDOWN
DERATING
THERMAL
DERATING
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