1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
2907
2907A
Unit
Collector Emitter Voltage
VCEO
40
60
Vdc
Collector Base Voltage
VCBO
60
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
600
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR 5 Board(1)
TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
556
C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25
C
Derate above 25
C
PD
300
2.4
mW
mW/
C
Thermal Resistance, Junction to Ambient
R
q
JA
417
C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
C
DEVICE MARKING
MMBT2907LT1 = M2B; MMBT2907ALT1 = 2F
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3)
(IC = 10 mAdc, IB = 0)
MMBT2907
MMBT2907A
V(BR)CEO
40
60
--
--
Vdc
Collector Base Breakdown Voltage (IC = 10
m
Adc, IE = 0)
V(BR)CBO
60
--
Vdc
Emitter Base Breakdown Voltage (IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
--
Vdc
Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0.5 Vdc)
ICEX
--
50
nAdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
MMBT2907
MMBT2907A
(VCB = 50 Vdc, IE = 0, TA = 125
C)
MMBT2907
MMBT2907A
ICBO
--
--
--
--
0.020
0.010
20
10
Adc
Base Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc)
IB
--
50
nAdc
1. FR 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBT2907LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBT2907LT1
MMBT2907ALT1
1
2
3
CASE 318 08, STYLE 6
SOT 23 (TO 236AB)
*Motorola Preferred Device
*
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
MMBT2907LT1 MMBT2907ALT1
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
MMBT2907
MMBT2907A
(IC = 1.0 mAdc, VCE = 10 Vdc)
MMBT2907
MMBT2907A
(IC = 10 mAdc, VCE = 10 Vdc)
MMBT2907
MMBT2907A
(IC = 150 mAdc, VCE = 10 Vdc) (3)
MMBT2907
MMBT2907A
(IC = 500 mAdc, VCE = 10 Vdc) (3)
MMBT2907
MMBT2907A
hFE
35
75
50
100
75
100
--
100
30
50
--
--
--
--
--
--
--
300
--
--
--
Collector Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
--
--
0.4
1.6
Vdc
Base Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
--
--
1.3
2.6
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product (3),(4)
(IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
200
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
--
8.0
pF
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
--
30
pF
SWITCHING CHARACTERISTICS
TurnOn Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc)
ton
--
45
ns
Delay Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc)
td
--
10
ns
Rise Time
IB1 = 15 mAdc)
tr
--
40
TurnOff Time
(VCC = 6.0 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
toff
--
100
ns
Storage Time
(VCC = 6.0 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
--
80
ns
Fall Time
IB1 = IB2 = 15 mAdc)
tf
--
30
3. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
0
0
16 V
200 ns
50
1.0 k
200
30 V
TO OSCILLOSCOPE
RISE TIME
5.0 ns
+15 V
6.0 V
1.0 k
37
50
1N916
1.0 k
200 ns
30 V
TO OSCILLOSCOPE
RISE TIME
5.0 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME
2.0 ns
P.W. < 200 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME
2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
MMBT2907LT1 MMBT2907ALT1
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
3.0
0.2
0.1
TJ = 125
C
25
C
55
C
VCE = 1.0 V
VCE = 10 V
h
FE
, NORMALIZED CURRENT
GAIN
2.0
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50 70
100
200
300
500
Figure 4. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V , COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
0
CE
IC = 1.0 mA
0.005
10 mA
0.01
100 mA
500 mA
0.02 0.03 0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT
300
5.0
Figure 6. TurnOff Time
IC, COLLECTOR CURRENT (mA)
5.0
t,
TIME (ns)
t,
TIME (ns)
200
100
70
50
30
20
10
7.0
5.0
3.0
7.0 10
20 30
50 70 100
200 300
500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = 30 V
IC/IB = 10
TJ = 25
C
500
300
100
70
50
30
20
10
7.0
5.0
7.0 10
20 30
50 70 100
200 300 500
200
tf
t
s = ts 1/8 tf
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
MMBT2907LT1 MMBT2907ALT1
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25
C
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 8. Source Resistance Effects
Rs, SOURCE RESISTANCE (OHMS)
NF
, NOISE FIGURE (dB)
NF
, NOISE FIGURE (dB)
f = 1.0 kHz
IC = 50
A
100
A
500
A
1.0 mA
Rs = OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
100
10
8.0
6.0
4.0
2.0
0
50
100
200
500 1.0 k
2.0 k
5.0 k 10 k
20 k
50 k
IC = 1.0 mA, Rs = 430
500
A, Rs = 560
50
A, Rs = 2.7 k
100
A, Rs = 1.6 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
30
Figure 10. CurrentGain -- Bandwidth Product
IC, COLLECTOR CURRENT (mA)
C, CAP
ACIT
ANCE (pF)
0.1
2.0
Figure 11. "On" Voltage
IC, COLLECTOR CURRENT (mA)
1.0
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V
, VOL
T
AGE (VOL
TS)
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
R
q
VC for VCE(sat)
f T
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
COEFFICIENT
(mV/
C)
20
10
7.0
5.0
3.0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
400
300
200
100
80
60
40
30
20
1.0 2.0
5.0
10
20
50
100 200
500 1000
0.8
0.6
0.4
0.2
0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
500
+0.5
0
0.5
1.0
1.5
2.0
2.5
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200 500
Ceb
Ccb
VCE = 20 V
TJ = 25
C
R
q
VB for VBE
MMBT2907LT1 MMBT2907ALT1
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT23 POWER DISSIPATION
The power dissipation of the SOT23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, R
JA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT23 package,
PD can be calculated as follows:
PD =
TJ(max) TA
R
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25
C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150
C 25
C
556
C/W
= 225 milliwatts
The 556
C/W for the SOT23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad
TM
. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10
C.
The soldering temperature and time shall not exceed
260
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
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