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Электронный компонент: P2N2907A

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1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
60
Vdc
Collector Base Voltage
VCBO
60
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
60
--
Vdc
Collector Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
V(BR)CBO
60
--
Vdc
Emitter Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
--
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB(off) = 0.5 Vdc)
ICEX
--
50
nAdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 150
C)
ICBO
--
--
0.01
10
Adc
Emitter Cutoff Current
(VEB = 3.0 Vdc)
IEBO
--
10
nAdc
Collector Cutoff Current
(VCE = 10 V)
ICEO
--
10
nAdc
Base Cutoff Current
(VCE = 30 Vdc, VEB(off) = 0.5 Vdc)
IBEX
--
50
nAdc
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Order this document
by P2N2907A/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
P2N2907A
CASE 2904, STYLE 17
TO92 (TO226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
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P2N2907A
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
hFE
75
100
100
100
50
--
--
--
300
--
--
Collector Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
--
--
0.4
1.6
Vdc
Base Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
--
--
1.3
2.6
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product(1), (2)
(IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
200
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
--
8.0
pF
Input Capacitance
(VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
--
30
pF
SWITCHING CHARACTERISTICS
TurnOn Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc) (Figures 1 and 5)
ton
--
50
ns
Delay Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = 15 mAdc) (Figures 1 and 5)
td
--
10
ns
Rise Time
IB1 = 15 mAdc) (Figures 1 and 5)
tr
--
40
ns
TurnOff Time
(VCC = 6.0 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
toff
--
110
ns
Storage Time
(VCC = 6.0 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
ts
--
80
ns
Fall Time
IB1 = IB2 = 15 mAdc) (Figure 2)
tf
--
30
ns
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
0
0
16 V
200 ns
50
1.0 k
200
30 V
TO OSCILLOSCOPE
RISE TIME
5.0 ns
+15 V
6.0 V
1.0 k
37
50
1N916
1.0 k
200 ns
30 V
TO OSCILLOSCOPE
RISE TIME
5.0 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME
2.0 ns
P.W. < 200 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME
2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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P2N2907A
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
3.0
0.2
0.1
TJ = 125
C
25
C
55
C
VCE = 1.0 V
VCE = 10 V
h
FE
, NORMALIZED CURRENT
GAIN
2.0
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50 70
100
200
300
500
Figure 4. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V , COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
0
CE
IC = 1.0 mA
0.005
10 mA
0.01
100 mA
500 mA
0.02 0.03 0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
20
30
50
Figure 5. TurnOn Time
IC, COLLECTOR CURRENT
300
5.0
Figure 6. TurnOff Time
IC, COLLECTOR CURRENT (mA)
5.0
t,
TIME (ns)
t,
TIME (ns)
200
100
70
50
30
20
10
7.0
5.0
3.0
7.0 10
20 30
50 70 100
200 300
500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = 30 V
IC/IB = 10
TJ = 25
C
500
300
100
70
50
30
20
10
7.0
5.0
7.0 10
20 30
50 70 100
200 300 500
200
tf
t
s = ts 1/8 tf
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
C
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P2N2907A
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
TYPICAL SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25
C
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 8. Source Resistance Effects
Rs, SOURCE RESISTANCE (OHMS)
NF
, NOISE FIGURE (dB)
NF
, NOISE FIGURE (dB)
f = 1.0 kHz
IC = 50
A
100
A
500
A
1.0 mA
Rs = OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
100
10
8.0
6.0
4.0
2.0
0
50
100
200
500 1.0 k
2.0 k
5.0 k 10 k
20 k
50 k
IC = 1.0 mA, Rs = 430
500
A, Rs = 560
50
A, Rs = 2.7 k
100
A, Rs = 1.6 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
30
Figure 10. CurrentGain -- Bandwidth Product
IC, COLLECTOR CURRENT (mA)
C, CAP
ACIT
ANCE (pF)
0.1
2.0
Figure 11. "On" Voltage
IC, COLLECTOR CURRENT (mA)
1.0
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V
, VOL
T
AGE (VOL
TS)
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
R
q
VC for VCE(sat)
f T
, CURRENTGAIN -- BANDWIDTH PRODUCT
(MHz)
COEFFICIENT
(mV/
C)
20
10
7.0
5.0
3.0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
400
300
200
100
80
60
40
30
20
1.0 2.0
5.0
10
20
50
100 200
500 1000
0.8
0.6
0.4
0.2
0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
500
+0.5
0
0.5
1.0
1.5
2.0
2.5
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200 500
Ceb
Ccb
VCE = 20 V
TJ = 25
C
R
q
VB for VBE
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P2N2907A
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 02904
(TO226AA)
ISSUE AD
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P2N2907A
6
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals"
must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
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P2N2907A/D
*P2N2907A/D*