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Электронный компонент: T2322

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1
Motorola Thyristor Device Data
Sensitive Gate Triacs
Silicon Bidirectional Triode Thyristors
. . . designed primarily for ac power switching. The gate sensitivity of these triacs
permits the use of economical transistorized or integrated circuit control circuits, and
it enhances their use in low-power phase control and load-switching applications.
Very High Gate Sensitivity
Low On-State Voltage at High Current Levels
Glass-Passivated Chip for Stability
Small, Rugged Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted.)
Rating
Suffix
Symbol
Value
Unit
Peak Repetitive Off-State Voltage(1)
(TJ = 25 to 100
C, Gate Open)
T2322, T2323
B
D
M
VDRM
200
400
600
Volts
RMS On-State Current (TC = 70
C)
(Full-Cycle Sine Wave 50 to 60 Hz)
IT(RMS)
2.5
Amps
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz)
ITSM
25
Amps
Circuit Fusing
(t = 8.3 ms)
I2t
2.6
A2s
Peak Gate Power (1
s)
PGM
10
Watts
Average Gate Power (TC = 60
C + 38.3 ms)
PG(AV)
0.15
Watt
Peak Gate Current (1
s)
IGM
0.5
Amp
Operating Junction Temperature Range
TJ
40 to +110
C
Storage Temperature Range
Tstg
40 to +150
C
Mounting Torque (6-32 Screw)(2)
--
8
in. lb.
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting Torque in excess of 6 in. lb. does not
appreciably lower case-to-sink thermal resistance. Main terminal 2 and heat-sink contact pad are common.
For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200
C, for 10 seconds.
Consult factory for lead bending options.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by T2322/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
T2322
T2323
Series
CASE 77-08
(TO-225AA)
STYLE 5
SENSITIVE GATE TRIACs
2.5 AMPERES RMS
200 thru 600 VOLTS
*Motorola preferred devices
MT1
G
MT2
MT1
G
MT2
MT2
*
T2322 T2323 Series
2
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
3.5
C/W
Thermal Resistance, Junction to Ambient
R
JA
60
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C and either polarity of MT2 to MT1 voltage unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25
C
TJ = 100
C
IDRM
--
--
--
0.2
10
0.75
A
mA
Peak On-State Voltage*
(ITM = 10 A)
T2323 Series
T2322 Series
VTM
--
--
1.7
1.7
2.6
2.2
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 30
)
All Modes
T2322 Series
MT2(+), G(+); MT2(), G()
T2323 Series
MT2(+), G(); MT2(),I G(+)
T2323 Series
IGT
--
--
--
--
--
--
10
25
40
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 Vdc, RL = 30
, TC = 25
C)
(VD = VDRM, RL = 125
, TC = 100
C)
VGT
--
0.15
1
--
2.2
--
Volts
Holding Current
(VD = 12 V, ITM = 150 mA, Gate Open)
IH
--
15
30
mA
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA)
tgt
--
1.8
2.5
s
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 100
C)
dv/dt
10
100
--
V/
s
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 3.5 A pk, Commutating
di/dt = 1.26 A/ms, Gate Unenergized, TC = 90
C)
dv/dt(c)
1
4
--
V/
s
*Pulse Test: Pulse Width
p
300
s, Duty Cycle
p
2%.
T2322 T2323 Series
3
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 77-08
(TO225AA)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 5:
PIN 1.
MT 1
2.
MT 2
3.
GATE
B
A
M
K
F
C
Q
H
V
G
S
D
J
R
U
1
3
2
2 PL
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.055
1.15
1.39
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
1.02
_
_
T2322 T2323 Series
4
Motorola Thyristor Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different
applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
T2322/D
*T2322/D*