Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD1110
Features
High Dynamic Range Cascadable 50
/75
Gain Block
3dB Bandwidth: 50 MHz to 1.3 GHz
17.0 dBm Typical P
1dB
@ 1.0 GHz
12 dB Typical Gain @ 0.5 GHz
3.8 dB Typical Noise Figure @ 1.0 GHz
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD1110 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package. The MP4TD1110 is designed for use in
systems where a high dynamic range and low distortion
gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial
and military applications.
The MP4TD1110 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
2
4
6
8
10
12
14
16
0.1
1
10
FREQUENCY (GHz)
GAI
N
(dB)
Id=60mA
Gold-Ceramic Microstrip Package Outline
1,2
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 .030
12,57 0,76
.004 .002
0,10,05
.030
0,76
.100
2,54
.020
0,51
.040
1,02
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
.005; mm .xx =
.13
Pin Configuration
Pin Number
Pin Description
1 RF
Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias
Ordering Information
Model No.
Package
MA4TD1110 Hermetic
Ceramic
MA4TD1110T
Tape and Reel
Electrical Specifications @ T
A
= +25
C, Id = 60 mA, Z0 = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
11.5
12.5
13.5
Gp
Gain Flatness
f = 0.1 to 0.7 GHz
dB
-
0.8
1.0
f
3dB
3 dB Bandwidth
ref 50 MHz Gain
GHz
-
1.3
-
SWR
in
Input SWR
f = 0.1 to 2.0 GHz
-
-
1.9
-
SWR
out
Output SWR
f = 0.1 to 2.0 GHz
-
-
2.1
-
P
1dB
Output Power @ 1 dB Gain Compression f = 0.7 GHz
dBm
16.0
17.0
-
NF
50
Noise Figure
f = 0.7 GHz
dB
-
3.8
4.5
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
30.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
160
-
V
d
Device
Voltage
-
V 4.5 5.5 6.5
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -8.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD1110
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
90 mA
Power Dissipation
2,3
560
mW
RF Input Power
+20 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jc
= 135
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate at 7.4 mW/
C for Tc > 124
C.
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 7.5 V
Vd = 5.5 V
Id =
Vcc - Vd
Rbias
MP4TD1110
Typical Performance Curves @ Id = 60 mA, TA = +25
C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
20
40
60
80
1 00
0
1
2
3
4
5
6
Vd, D E VIC E VO L T AG E (V)
I
d
, DEVI
CE CURRENT (
m
A)
POWER GAIN vs CURRENT
4
5
6
7
8
9
1 0
1 1
1 2
1 3
1 4
0
2 0
4 0
6 0
8 0
1 0 0
Id, D E VIC E C U R R E N T (m A)
GAI
N
(
d
B)
f= 0.1 G H z
f= 0 .5 G H z
f= 1 .0 G H z
f= 2 .0 G H z
RETURN LOSS vs FREQUENCY
-2 0
-1 8
-1 6
-1 4
-1 2
-1 0
-8
-6
-4
-2
0
0 .1
1
1 0
FR E Q U E N C Y (G H z)
RETURN LOSS (
d
B)
IN PU T
O U T PU T
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
1 0
1 2
1 4
1 6
1 8
2 0
2 2
0 .1
1
1 0
FR E Q U E N C Y (G H z)
P
OU
T
- 1dB
(dB
m
)
Id= 6 0 m A
Id= 75 m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD1110
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
3
3 .5
4
4 .5
5
0 .1
1
1 0
FR E Q U E N C Y (G H z)
NOI
S
E FI
GURE (
d
B)
Id= 40 m A
Id= 6 0 m A
Id= 7 5m A
REVERSE ISOLATION vs FREQUENCY
-18
-16
-14
-12
-10
-8
-6
0 .1
1
1 0
FR E Q U E N C Y (G H z)
REVERSE I
S
OLATI
O
N (
d
B)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 60 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.117
-129.1
4.26
162.7 0.156 6.4 0.12 -128.3
0.2 0.131
-131.3
4.20
159.2 0.157 7.1 0.14 -130.9
0.3 0.149
-134.2
4.12
154.8 0.160 8.0 0.17 -133.8
0.4 0.171
-137.7
4.02
149.5 0.162 9.0 0.20 -137.2
0.5 0.197
-142.1
3.90
143.5 0.166 10.2 0.23 -141.2
0.6 0.225
-146.3
3.77
137.4 0.170 11.4 0.26 -144.8
0.7 0.252
-150.7
3.63
131.6 0.174 12.4 0.29 -148.6
0.8 0.279
-155.1
3.49
126.0 0.177 13.3 0.31 -152.9
0.9 0.305
-159.4
3.36
120.7 0.181 14.0 0.33 -157.4
1.0 0.330
-163.3
3.22
115.6 0.185 14.7 0.36 -162.1
1.1 0.354
-167.1
3.09
110.7 0.189 15.0 0.38 -166.7
1.2 0.377
-170.5
2.97
106.1 0.192 15.2 0.40 -171.1
1.3 0.400
-173.8
2.85
101.7 0.196 15.1 0.42 -175.2
1.4 0.421
-177.2
2.74
97.7 0.199 15.0 0.44 -178.5
1.5 0.441
179.4
2.63
93.9 0.204 15.1 0.46 178.9
1.6 0.460
176.1
2.52
90.4 0.208 15.1 0.48 177.0
1.7 0.477
172.8
2.42
87.2 0.212 15.5 0.49 175.4
1.8 0.495
169.8
2.33
84.2 0.217 16.1 0.49 173.9
1.9 0.513
167.5
2.25
81.1 0.221 16.7 0.50 172.3
2.0 0.533
165.3
2.17
77.9 0.223 17.3 0.51 170.4
2.1 0.553
163.6
2.10
74.6 0.225 17.7 0.51 168.1
2.2 0.574
162.1
2.03
71.3 0.226 17.4 0.52 165.4
2.3 0.591
160.6
1.97
67.9 0.225 16.9 0.53 162.6
2.4 0.605
159.0
1.91
64.6 0.225 15.8 0.54 160.0
2.5 0.615
157.4
1.86
61.5 0.227 14.4 0.55 157.7
2.6 0.623
155.7
1.82
58.8 0.231 12.7 0.57 155.8
2.7 0.632
154.3
1.79
56.2 0.239 10.9 0.60 154.1
2.8 0.638
153.0
1.76
54.1 0.248 9.2 0.62 153.0
2.9 0.642
152.1
1.75
52.5 0.257 7.9 0.65 152.4
3.0 0.648
151.5
1.75
51.3 0.266 6.9 0.67 151.9
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