Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Silicon Bipolar
Low Noise
Microwave Transistors
MP42001
Features
Low Noise Figure (.8dB Typical @ 60 MHz)
Large Dynamic Range (+25dBm @ 1Db Compression
Point)
Gold Metalization
Hermetic and Surface Mount Packages Available
Can be Screened to JANTX, JANTXV Equivalent Levels
Low 1/f Noise (1.0dB Typical @ 10 KHz)
Description
This series of NPN silicon transistors is designed to
provide the low noise figure at frequencies from 10 to
1000 MHz. These transistors exhibit excellent noise
figure vs. current characteristics which results in
extremely low noise and wide dynamic range
performance. These transistors find wide application in
sophisticated radar and communications equipment at
VHF/UHF.
Applications
The MP42001 family of bipolar NPN transistors can be
used for low noise, high associated gain. large dynamic
range amplifiers up to approximately 1.0 GHz. These
transistors can also be used as preamplifier or driver
stages in the same frequency range.
Case Styles
Micro-X
Silicon Bipolar High fT Low Noise Microwave Transistors MP42001 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Absolute Maximum Ratings
MP42001 Series
Collector-Base Voltage
V
CBO
20
V
Collector-Emitter Voltage
V
CEO
15
V
Emitter-Base Voltage
V
EBO
1.5
V
Collector Current
I
C
125
mA
Junction Operating Temperature
T
j
200
C
Storage Temperature
Chip or Ceramic Packages
-65
C to +200
C
Plastic Packages
-65
C to +125
C
Total Power Dissipation at 25
C
509 Case Style
450 mW
510 Case Style
1.2 W
35 Case Style
750 mW
Electrical Specifications @ 25
C
MP42001 Series
Parameter of Test
Condition
Symbol
Units
MP4200100
Chip
MP4200135
Micro-X
MP42001-509
TO-72
Gain Bandwidth Product
V
CE
= 10 volts
f
T
GHz
2.3 typ
1.5 typ
1.5 typ
I
C
= 35 mA
Insertion Power Gain
V
CE
= 10 volts
|S
21E
|
2
dB
I
C
= 28 mA
f = 100 MHz
30 typ
29 typ
26 typ
f = 450 MHz
16 typ
14 min
12 min
Noise Figure
V
CE
= 10 volts
NF
dB
I
C
= 5 mA
f = 60 MHz
1.2 typ
1.4 typ
1.5 typ
f = 450 GHz
1.7 typ
1.9 typ
2.3 typ
Unilateral Gain
V
CE
= 10 volts
GTU (max)
dB
I
C
= 5 mA
f = 60 MHz
30 typ
28 typ
28 typ
Power Out at 1 dB
V
CE
= 10 volts
P
1dB
dBm
Compression I
C
= 10 mA
Z=50 Ohms
f = 60 MHz
N/A
+5 typ
+7 typ
f = 450 MHz
N/A
+2 typ
+4 typ
Silicon Bipolar High fT Low Noise Microwave Transistors MP42001 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Electrical Specifications @ 25
C
MP42001 Series
Parameter Condition
Symbol
Min
Typical
Max
Units
Collector Cut-off Current
V
CB
= 10 volts
I
CBO
10 nA
I
E
= 0
A
Emitter Cut-off Current
V
EB
= 1 volt
I
EBO
1
A
I
C
= 0
A
Forward Current Gain
V
CE
= 8 volts
h
FE
30 125 250
I
C
= 7 mA
Collector-Base
Junction Capacitance
V
CB
= 15 volts
f = 1 MHz
C
CB
---- 1.7
1.3
1.2
pF (509)
pF (510)
pF (511)
Typical Scattering Parameters in the TO-72 Can Package
MP42001-509, V
CE
= 10 Volts, I
C
= 5 mA
Frequency
S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag. Angle Mag
Angle
110 0.667
-83 8.74
122.6
0.040
48.9 0.765
-21.7
200 0.551
-116
6.02
104.7
0.054 45.7 0.649
-25.8
300 0.496
-138
4.32
92.4
0.064 48.1 0.597
-28.4
400 0.475
-155
3.45
83.1
0.070 50.9 0.578
-30.7
500 0.466
-167
2.79
75.0
0.080 55.8 0.570
-32.4
600 0.467
-178
2.38
69.1
0.088 59.9 0.551
-35.6
700 0.470
174
2.13
62.1
0.098 63.3 0.528
-38.6
800 0.474
167
1.87
57.3
0.114 65.4 0.511
-44.3
900 0.469
161
1.72
52.4
0.127 67.1 0.506
-50.4
1000 0.464
153 1.58 46.3
0.145 70.0 0.503
-56.4
MP42001-510, V
CE
= 10 Volts, I
C
= 60 mA
Frequency
S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag. Angle Mag
Angle
100 0.76
-143
30.01
111
0.01
45 0.49
-30
200
0.80 -164 14.54 96 0.01
43
0.34 -22
300
0.81 -174 8.81 86 0.02
46
0.32 -20
400
0.82 -178 6.38 80 0.02
50
0.31 -21
500 0.84
178
4.92 75
0.02 56 0.31
-23
600 0.82
174
4.11 68
0.03 59 0.32
-26
700 0.82
172
3.38 63
0.03 63 0.32
-29
800 0.85
168
2.82 58
0.03 61 0.33
-33
900 0.92
172
2.32 59
0.03 64 0.34
-37
1000 0.83
162
2.28 49 0.04 64 0.35
-40
Silicon Bipolar High fT Low Noise Microwave Transistors MP42001 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Performance Curves
Silicon Bipolar High fT Low Noise Microwave Transistors MP42001 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Case Styles
MP4200135
Micro-X
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