Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Silicon Bipolar
Low Noise
Microwave Transistors
MP42141
Features
Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz)
High Power Gain At 1.0 GHz 18.0 dB Typical
Gold Metalization
Hermetic and Surface Mount Packages Available
Can be Screened to JANTX, JANTXV Equivalent Levels
ION Implanted arsenic Emitter for Consistent Performance
Description
This NPN Silicon transistor finds applications in low
noise and medium power microwave amplifier circuitry.
The MP42141 exhibits an excellent noise figure
characteristic over the frequency range of .5 to 2 GHz.
This transistor also features good high frequency current
gain at medium current levels.
Applications
RF amplifiers and low level oscillators.
Case Styles
Micro-X
Silicon Bipolar High fT Low Noise Microwave Transistors MP42141 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Absolute Maximum Ratings
MP42141 Series
Collector-Base Voltage
V
CBO
27
V
Collector-Emitter Voltage
V
CEO
20
V
Emitter-Base Voltage
V
EBO
1.5
V
Collector Current
I
C
50
mA
Junction Operating Temperature
T
j
200
C
Storage Temperature
Chip or Ceramic Packages
-65
C to +200
C
Plastic Packages
-65
C to +125
C
Total Power Dissipation at 25
C
509 Case Style
400 mW
510 Case Style
700 mW
35 Case Style
700 mW
Electrical Specifications @ 25
C
MP42141 Series
Parameter of Test
Condition
Symbol
Units
MP4214100
Chip
MP4214135
Micro-X
MP42141-509
TO-72
Gain Bandwidth Product
V
CE
= 10 volts
f
T
GHz
4.1
typ -----
-----
Fm =1.0 GHz
Ic = 15 mA
Insertion Power Gain
V
CE
= 15 volts
|S
21E
|
2
dB
I
C
= 15 mA
f = 1 GHz
13 typ
13 typ
11 typ
f = 2 GHz
7 typ
7 min
5 typ
Noise Figure
V
CE
= 10 volts
NF
dB
I
C
= 5 mA
f = 1 GHz
2.0 typ
2.0 typ
2.3 typ
f = 2 GHz
3.4 typ
3.4 typ
3.6 typ
Unilateral Gain
V
CE
= 10 volts
GTU (max)
dB
I
C
= 15 mA
f = 1 GHz
17 typ
17 typ
14 typ
Power Out at 1 dB
V
CE
= 10 volts
P
1dB
dBm
Compression I
C
= 10 mA
Z=OPT
f = 1 GHz
N/A
+7 typ
+4 typ
Silicon Bipolar High fT Low Noise Microwave Transistors MP42141 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Electrical Specifications @ 25
C
MP42141 Series
Parameter Condition
Symbol
Min
Typical
Max
Units
Collector Cut-off Current
V
CB
= 10 volts
I
CBO
100 nA
I
E
= 0
A
Emitter Cut-off Current
V
EB
= 1 volt
I
EBO
1
A
I
C
= 0
A
Forward Current Gain
V
CE
= 10 volts
h
FE
20 125 250
I
C
= 5 mA
Collector-Base
Junction Capacitance
V
CB
= 15 volts
f = 1 MHz
C
CB
---- 1.0
pF (35)
Typical Scattering Parameters
MP42141-511, V
CE
= 10 Volts, I
C
= 5 mA
Frequency
S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag. Angle Mag
Angle
400 .626
-112.9
7.563
110.3
.044
43.0 .726
-34.3
500
.618 -125.0 6.425 102.1 .046
38.9
.660 -32.9
800
.577 -150.8 4.363 84.7 .054
34.3
.616 -38.6
1200
.566 -170.1 3.073 67.7 .062
32.9
.577 -43.1
1600
.661 -175.9 2.344 54.1 .069
32.6
.578 -50.4
2000 .561
166.2
1.894
43.2
.078 32.6 .571
-63.6
2400 .597
156.6
1.608
30.6
.084 30.3 .572
-70.8
2800 .506
147.8
1.408
17.9
.093 27.0 .565
-81.4
3200 .630
141.1
1.200
6.8
.099 24.6 .583
-90.7
3600 .651
133.7
1.072
-4.6
.106 21.7 .597
-102.6
4000 .643
132.9
.933
-6.5
.109 24.7 .599
-109.2
4400 .643 127.7 .796 -18.4 .112
21.4
.637
-121.6
4800 .656 122.7 .702 -28.8 .123
17.0
.686
-135.2
5000 .652 120.1 .657 -34.1 .123
14.0
.693
-142.1
MP42141-511, V
CE
= 15 Volts, I
C
= 15 mA
Frequency
S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag. Angle Mag
Angle
400 .537
-143.2
10.294
100.9
.026
45.4 .608
-31.2
500
.547 -152.2 8.564 93.7 .028
46.0
.569 -29.3
800
.548 -170.2 5.694 79.2 .036
47.2
.562 -33.5
1200
.550 -176.9 3.867 65.9 .046
48.7
.532 -37.3
1600 .562
166.4
2.946
53.6
.056 48.0 .539
-43.9
2000 .579
158.8
2.383
43.8
.067 47.2 .539
-56.9
2400 .601
150.8
2.010
32.1
.074 43.4 .537
-63.4
2800 .608
143.3
1.755
20.0
.083 39.7 .530
-73.5
3200 .643
137.0
1.505
10.4
.091 36.6 .553
-82.5
3600 .657
130.1
1.338
-.0 .098 33.5 .560
-94.1
4000 .654
129.7
1.188
-1.4
.104 36.2 .565
-99.8
4400 .648
124.6
1.017
-13.3
.107 32.5 .600
-112.7
4800 .665 120.1 .905 -23.4 .120
27.5
.648
-125.9
5000 .650 117.2 .849 -28.9 .121
24.4
.657
-133.0
Silicon Bipolar High fT Low Noise Microwave Transistors MP42141 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Silicon Bipolar High fT Low Noise Microwave Transistors MP42141 Series
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4214135
Micro-X
Collector
Emitter
B
E
F
4 PLCS.
C
G
Base
H
Emitter
D
A
MP42141-509
TO-72
MP4214135
INCHES
MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.092
0.108
2.34 2.74
B 0.079
0.087
2.01 2.21
C
0.070
1.78
D 0.019
0.025
0.48 0.64
E 0.018
0.022
0.46 0.56
F 0.150
3.81
G 0.003
0.006
0.08 0.15
H
45
45
MP42141-509
INCHES
MILLIMETERS
DIM MIN. MAX.
MIN. MAX.
A 0.350
0.370
8,89 9,40
B 0.240
0.260
6,11 6,60
C 0.315
0.335
8,00 8,51
D
0.040
1,02
E 0.500
12,70
F 0.016
0.021
0,41 0,53
G 0.190
0.210
4,83 5,33
H
89 DEG 91 DEG 89 DEG 91 DEG
J 0.029
0.043
0,74 1,09
K
43 DEG 47 DEG 43 DEG 47 DEG
L 0.028
0.034
0,71 0,86
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