Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
3 Volt, Low Noise
High fT Silicon Transistor
MP4T6310 Series
Features
High Performance at VCE = 3V
Low Noise Figure at Small Currents (0.3-2 mA)
High Gain (14 dB) at 1mA Collector Current
High fT (14 GHz)
Available on Tape and Reel
Description
The MP4T6310 series of low current, high fT silicon NPN
bipolar transistors provides low noise figure at a bias of 3
volts and small collector current. These inexpensive surface
mount NPN transistors are well suited for usage in protable
battery operated wireless systems from 500 MHz through 2.5
GHz where low noise figure at small current is important.
The MP4T6310 transistors series has high fT and low noise
when operated with 0.3 to 2.0 milliamperes current, and 3
volt bias. The associated gain is approximately 14 dB at 1
GHz with 1 mA collector current. The MP4T6310 also has
low phase noise while operating in a low power 3-5 volt
battery operated VCO in the frequency range of 0.5 to 3
GHz.
The MP4T6310 transistor is designed for wireless
communication systems from VHF through L-band where
good noise figure and high gain at 3 volt bias and low DC
current are key system requirements. Suggested uses
include, 900 MHz portable phones, pagers, PCN subscriber
phones and 2.4 GHz cordless and cellular hand held
receivers.
The MP4T6310 family of transistors is available in chip
(MP4T631000), SOT-23 (MP4T631033), SOT-143
(MP4T631039), and in Micro-X (MP4T631035) packages.
Surface mount packages are available on tape and reel.
SOT-23
SOT-143
Chip
3 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6310 Series
Electrical Specifications at 25
C
Symbol Parameters
Test
Conditions
Units MP4T631000
Chip
MP4T631033
SOT-23
MP4T631035
Micro-X
MP4T631039
SOT-143
fT Gain
Bandwidth
Product
V
CE
= 3V
I
C
= 6 mA
GHz
14 typ.
12 typ.
14 typ.
12 typ.
|S
21E
|
2
Insertion
Power
Gain
V
CE
= 3V
I
C
= 4 mA
f = 1 GHz
f = 2 GHz
dB
12 typ.
8 typ.
11 typ.
7 typ.
12 typ.
8 typ.
11 typ.
7 typ.
NF Noise
Figure
V
CE
= 3V
I
C
= 0.5 mA
I
C
= 1 mA
f = 1 GHz
dB
1.5 typ.
1.5 typ.
1.5 typ.
1.5 typ.
GTU (max)
Unilateral Gain
V
CE
= 3V
I
C
= 4 mA
f = 1 GHz
f = 2 GHz
dB
14.5 typ.
9 typ.
13 typ.
8 typ.
14.5 typ.
9 typ.
13 typ.
8 typ.
MAG Maximum
Available Gain
V
CE
= 3V
I
C
= 4 mA
f = 2 GHz
dB
10 typ.
10 typ.
10 typ.
10 typ.
P
1dB
Power Out at 1dB
Compression
V
CE
= 3V
I
C
= 8 mA
f = 1 GHz
dBm
1.5 typ.
1.5 typ.
1.5 typ.
1.5 typ.
R
TH (J-A)
Thermal
Resistance
Junction/
Ambient
C/W
75 max
1
700
typ.
2
600
typ.
2
700
typ.
2
1. Junction/Heat Sink R
TH
(J-C)
2. Free
Air
Maximum Ratings at 25
C
Parameter Symbol
Maximum
Rating
Collector Base Voltage
V
CBO
8
V
Collector-Emitter Voltage
V
CEO
6
V
Emitter-Base Voltage
V
EBO
1.5
V
Collector Current
I
C
10
mA
Junction Temperature
T
j
200
C
Storage Temperature
Chips or Ceramic Packages
T
STG
-65
C to +200
C
Plastic Packages
-65
C to +125
C
Power Dissiapation
P
D
-60mW
1
1. See Typical Performance Curves for power derating.
Electrical Specifications at 25
C
Parameters Conditions
Symbol
Min.
Typ.
Max.
Units
Collector Cut-off Current
V
CB
= 3 V
I
E
= 0
I
CBO
100 nA
Emitter Cut-off Current
V
EB
= 1 V
I
C
= 0
I
EBO
1
A
Forward Current Gain
V
CE
= 3 V
I
C
= 3 mA
h
FE
20 100
200
Collector Base
Junction Capacitance
V
CB
= 3 V
I
E
= 0
f = 1 MHz
C
OB
0.42 0.55
pF
3 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6310 Series
MP4T631035
Typical Scattering Parameters in the MIcro-X Package
VCE = 3 Volts, IC = 2 mA
Frequency S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
500 0.744
-37.9
4.174
137.0
0.088
63.8
0.841
-31.2
1000 0.524
-69.7
3.435
109.7
0.136
51.4
0.645
-48.2
1500 0.357
-94.3
2.771
89.9
0.169
45.5
0.531
-57.9
2000 0.255
-118.6
2.308
75.0
0.201
41.2
0.463
-67.5
2500 0.188
-142.6
1.977
62.3
0.228
37.3
0.415
-75.2
3000 0.139
-171.1
1.709
51.5
0.254
33.8
0.393
-81.9
3500 0.130
168.9
1.587
41.9
0.281
29.1
0.360
91.2
4000 0.133
140.6
1.448
33.1
0.299
25.8
0.342
-97.9
4500 0.156
122.4
1.369
23.1
0.323
21.8
0.324
-107.8
5000 0.180
105.0
1.296
15.5
0.342
17.9
0.308
-115.4
5500 0.204
89.7
1.239
7.9
0.362
14.3
0.299
-123.5
6000 0.228
78.9
1.194
0.7
0.379
10.7
0.292
-132.8
VCE = 3 Volts, IC = 4 mA
Frequency S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag.
Angle Mag
Angle
500 0.558
-54.5
6.582
127.1
0.074
61.9
0.727
-37.0
1000 0.324
-92.2
4.537
98.8
0.114
54.8 0.523
-49.9
1500 0.217
-119.0
3.299
82.1
0.149
51.4 0.437
-56.5
2000 0.169
-150.7
2.635
69.2
0.184
47.4 0.387
-65.3
2500 0.147
172.8
2.204
58.0
0.215
43.3 0.353
-72.2
3000 0.141
148.6
1.888
48.1
0.244
39.4 0.330
-78.6
3500 0.145
134.2
1.719
39.3
0.274
34.5 0.315
-88.4
4000 0.167
115.0
1.562
30.9
0.296
30.7 0.305
-95.7
4500
0.196 103.5
1.465 21.3 0.322 26.2 0.288 -106.1
5000
0.223 90.9 1.381 13.9 0.343 22.0 0.275 -114.0
5500
0.251 79.0 1.314 6.4 0.365 17.8 0.267 -122.7
6000
0.275 69.7 1.260 -1.4 0.383 14.1 0.262 -132.5
VCE = 3 Volts, IC = 6 mA
Frequency S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag.
Angle Mag
Angle
500 0.429
-67.5
7.855
120.2
0.067
62.5
0.656
-39.5
1000 0.244
-107.3
4.871
93.9
0.107
57.9 0.466
-49.4
1500 0.178
-136.4
3.445
78.8
0.144
54.7 0.397
-54.9
2000 0.160
-168.7
2.722
66.7
0.179
50.3 0.354
-63.5
2500 0.158
163.5
2.264
56.0
0.212
45.9 0.326
-70.3
3000 0.166
138.7
1.933
46.4
0.241
41.5 0.306
-76.9
3500 0.170
126.8
1.753
37.9
0.273
36.5 0.295
-87.3
4000 0.192
109.9
1.584
29.8
0.294
32.8 0.289
-94.3
4500
0.221 100.9
1.490 20.2 0.322 28.1 0.275 -106.0
5000
0.250 89.2 1.403 13.0 0.344 23.8 0.263 -114.7
5500
0.280 77.8 1.333 5.3 0.367 19.4 0.255 -124.2
6000
0.304 68.6 1.276 -2.4 0.385 15.7 0.254 -134.7
3 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6310 Series
Typical Performance Curves (MP4T631035)
POWER DERATING CURVES
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
8 0
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
A M B I E N T T E M P E R A T U R E (C )
P
O
W
E
R DI
S
S
I
P
A
T
I
O
N
(
m
W
)
M P 4 T 6 3 1 0 0 0 ( C H I P ) O N I N F I N I T E H E A T S I N K
M P 4 T 6 3 1 0 3 5 (M IC R O -X )
M P 4 T 6 3 1 0 3 3 , 3 9
(S O T -2 3 , 1 4 3 ) F R E E A I R
GAIN vs FREQUENCY at VCE=3 V and IC =
4 mA
2
4
6
8
1 0
1 2
1 4
1 6
1
10
F R EQ U EN C Y (G H z)
GA
I
N
(
d
B
)
GT U (M AX )
|S
2 1E
|
2
GAIN BANDWIDTH PRODUCT (fT) vs
COLLECTOR CURRENT at VCE=3 V
8
9
1 0
1 1
1 2
1 3
1 4
1 5
1
10
C O LL EC T O R C U R R EN T (m A)
G
A
I
N
B
ANDW
I
D
T
H
(
G
H
z
)
NOISE FIGURE and ASSOCIATED GAIN at
VCE = 3 V, 1 GHz vs COLLECTOR CURRENT
0
2
4
6
8
10
12
14
16
0.1
1
10
CO LLE CTO R CURRE NT (mA)
NO
I
S
E
F
I
G
URE
(
d
B
)
A
S
S
O
C
I
A
TED
G
A
IN
(
d
B)
NO ISE FIGURE
ASSOCIATE D GAIN
COLLECTOR-BASE CAPACITANCE (C
OB
)
vs COLLECTOR-BASE VOLTAGE
0
0.1
0.2
0.3
0.4
0.5
0.6
1
10
CO LL ECT OR-B ASE VO LTAGE (Vo lts)
CO
L
L
.
-B
AS
E
CAP
ACI
T
ANCE
(p
F
)
GAIN vs COLLECTOR CURRENT at 3 GHz,
VCE=3 V
2
3
4
5
6
7
8
1
10
CO LL ECT OR CURRENT (mA)
GA
I
N
(
d
B
)
M AG
GT U (M AX)
|S
21 E
|
2
3 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6310 Series
Typical Performance Curves
(MP4T631035) Cont.
DC CURRENT GAIN (hFE) vs COLLECTOR
CURRENT at VCE = 3 V
0
50
1 00
1 50
2 00
1
10
COL LE CTO R CURRE NT (mA)
DC CURRE
NT
G
A
I
N
OUTPUT POWER at 1 dB COMPRESSION
POINT vs COLLECTOR CURRENT VCE=3V
0
0.5
1
1.5
2
2.5
3
3.5
6 .5
7
7 .5
8
8 .5
9
9.5
1 0
COL LE CTO R CURRE NT (mA)
P
OU
T
- 1
d
B
(dB
m
)
f = 90 0 M H z
f = 2 GHz
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