Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
3 Volt, General Purpose Low Noise
High fT Silicon Transistor
MP4T6325 Series
Features
Low Voltage Operation (3 - 5V)
High fT (11 GHz)
Low Noise Figure with 1-5 mA Current
Inexpensive
Available on Tape and Reel
Description
The MP4T6325 series of low voltage silicon bipolar
transistors provide low noise figure at a bias of 3-5 volts and
collector current of 1 to 5 mA. These inexpensive surface
mount transistors are useful for low noise amplifiers and
VCOs in portable battery operated RF systems from VHF
through 2.5 GHz.
The MP4T6325 series has high fT (11 GHz) and provides
1.5 dB noise figure with 1-5 mA current and 3 volts bias at 1
GHz. These transistors also have low phase noise when used
in 3-5 volt low power battery operated VCOs through 2.5
GHz.
The MP4T6325 series are inexpensive transistors useful for
portable battery operated RF systems that require low current
drain from 3-5 volts DC supplies.
The MP4T6325 family of transistors is available in chip
(MP4T632500), SOT-23 (MP4T632533), SOT-143
(MP4T632539) and in Micro-X (MP4T632535) packages.
Surface mount packages are available on tape and reel.
SOT-23
SOT-143
Chip
3 Volt, General Purpose Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6325 Series
Electrical Specifications at 25
C
Symbol Parameters Test
Conditions
Units MP4T632500
Chip
MP4T632533
SOT-23
MP4T632535
Micro-X
MP4T632539
SOT-143
fT Gain
Bandwidth
Product
V
CE
= 3V
I
C
= 10 mA
GHz
11 typ.
10 typ.
11 typ.
11 typ.
|S
21E
|
2
Insertion
Power
Gain
V
CE
= 3V
I
C
= 10 mA
f = 1 GHz
f = 2 GHz
dB
12 typ.
8 typ.
11 typ.
7 typ.
12 typ.
8 typ.
11 typ.
7 typ.
NF Noise
Figure
V
CE
= 3V
I
C
= 2 mA
f = 1 GHz
dB
1.5 typ.
1.6 typ.
1.5 typ.
1.6 typ.
GTU (max) Unilateral Gain
V
CE
= 3V
I
C
= 10 mA
f = 1 GHz
f = 2 GHz
dB
14.5 typ.
9 typ.
13 typ.
8 typ.
14.5 typ.
9 typ.
13 typ.
8 typ.
MAG Maximum
Available Gain
V
CE
= 3V
I
C
= 10 mA
f = 2 GHz
dB
10 typ.
9 typ.
10 typ.
9 typ.
P
1dB
Power Out at 1dB
Compression
V
CE
= 3V
I
C
= 15 mA
f = 900MHz
dBm
8 typ.
8 typ.
8 typ.
8 typ.
R
TH (J-A)
Thermal
Resistance
Junction/
Ambient
C/W
650 typ.
500 typ.
625 typ.
R
TH (J-C)
Thermal
Resistance
Junction/
Case
C/W
70 max.
1
200 typ.
200 typ.
200 typ.
1.
Junction/Heat Sink R
TH
(J-C)
Maximum Ratings at 25
C
Parameter Symbol
Maximum
Rating
Collector Base Voltage
V
CBO
8
V
Collector-Emitter Voltage
V
CEO
6
V
Emitter-Base Voltage
V
EBO
1.5
V
Collector Current
I
C
25
mA
Junction Temperature
T
j
200
C
Storage Temperature
Chips or Ceramic Packages
T
STG
-65
C to +200
C
Plastic Packages
-65
C to +125
C
Power Dissiapation
P
D
150mW
1
1. See Typical Performance Curves for power derating.
Electrical Specifications at 25
C
Parameters Conditions
Symbol
Min.
Typ.
Max.
Units
Collector Cut-off Current
V
CB
= 5 V
I
E
= 0
I
CBO
100 nA
Emitter Cut-off Current
V
EB
= 1 V
I
C
= 0
I
EBO
1
A
Forward Current Gain
V
CE
= 3 V
I
C
= 3 mA
h
FE
20
90
200
Collector Base
Junction Capacitance
V
CB
= 3 V
I
E
= 0
f = 1 MHz
C
OB
0.52 0.70 pF
3 Volt, General Purpose Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6325 Series
MP4T632535
Typical Scattering Parameters in the MIcro-X Package
VCE = 3 Volts, IC = 5 mA
Frequency S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
500 0.486
-80.5
7.164
119.8
0.077
56.6
0.628
-45.8
1000 0.338
-128.0
4.508
93.4
0.112
51.9
0.424
-58.8
1500 0.294
-156.3
3.219
78.1
0.144
50.2
0.345
-65.9
2000 0.284
169.8
2.533
66.1
0.179
47.8
0.305
-74.9
2500 0.283
160.9
2.123
55.5
0.210
44.7
0.280
-83.1
3000 0.281
144.6
1.835
46.3
0.240
41.8
0.266
-90.8
3500 0.290
132.5
1.678
36.8
0.272
36.7
0.256
-103.7
4000 0.320
119.4
1.546
28.3
0.301
33.2
0.254
-113.8
4500 0.333
106.6
1.434
18.9
0.323
29.0
0.245
-125.4
5000 0.358
94.9
1.354
11.5
0.349
25.1
0.241
-135.9
5500 0.382
82.7
1.290
4.0
0.375
21.4
0.246
-146.1
6000 0.405
72.7
1.238
-4.0
0.397
17.7
0.255
-158.0
VCE = 3 Volts, IC = 10 mA
Frequency S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag.
Angle Mag
Angle
500 0.326
-116.9
8.628
108.6
0.060
60.9
0.505
-48.5
1000 0.288
-158.6
4.808
86.7
0.098
60.0 0.351
-56.2
1500 0.288
174.6
3.337
73.4
0.135
57.7 0.302
-61.8
2000 0.305
160.8
2.608
62.3
0.170
53.7 0.275
-71.7
2500 0.319
145.8
2.172
52.2
0.204
49.7 0.256
-80.2
3000 0.330
131.0
1.863
43.2
0.234
45.8 0.245
-88.1
3500
0.335 121.4
1.696 34.5 0.268 41.0 0.245 -101.8
4000
0.372 110.2
1.559 25.9 0.299 36.8 0.245 -112.9
4500
0.385 99.4 1.444 16.9 0.322 32.7 0.240 -125.3
5000
0.417 88.6 1.361 9.4 0.350 28.3 0.237 -136.8
5500
0.445 77.1 1.294 3.2 0.379 24.1 0.242 -148.0
6000
0.468 67.4 1.236 -6.0 0.401 20.3 0.253 -160.2
VCE = 3 Volts, IC = 15 mA
Frequency S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag.
Angle Mag
Angle
500 0.286
-136.7
9.912
104.1
0.053
65.0
0.428
-50.5
1000 0.278
-173.6
5.355
84.5
0.092
64.6 0.295
-55.5
1500 0.287
168.5
3.679
72.6
0.132
60.8 0.263
-60.3
2000 0.317
149.8
2.875
61.7
0.165
56.6 0.236
-70.3
2500 0.334
135.8
2.377
52.0
0.200
52.2 0.222
-77.5
3000 0.354
121.6
2.029
43.0
0.230
47.7 0.215
-84.3
3500 0.355
112.4
1.834
34.6
0.265
42.7 0.218
-97.2
4000
0.382 100.2
1.653 26.7 0.290 38.9 0.220 -103.8
4500
0.408 92.3 1.552 17.3 0.317 34.1 0.218 -117.6
5000
0.440 82.1 1.456 10.0 0.344 29.7 0.213 -127.1
5500
0.471 71.3 1.377 2.2 0.372 25.2 0.212 -137.0
6000
0.492 62.2 1.312 -5.5 0.392 21.3 0.218 -147.9
3 Volt, General Purpose Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6325 Series
Typical Performance Curves (MP4T632535)
POWER DERATING CURVES
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
1 7 5
A M B I E N T T E M P E R A T U R E (C )
PO
W
E
R
D
I
S
S
I
PA
T
I
O
N
(
m
W
)
M P 4 T 6 3 2 5 0 0 ( C H I P )
O N I N F IN I T E H E A T S I N K
M P 4 T 6 3 2 5 3 5 (M IC R O -X )
M P 4 T 6 3 2 5 3 3 , 3 9
(S O T -2 3 , 1 4 3 ) F R E E A I R
GAIN vs FREQUENCY at VCE=3 V and IC =
10 mA
0
2
4
6
8
1 0
1 2
1 4
1 6
1
10
F R EQ U EN C Y (G H z)
GA
I
N
(
d
B
)
G TU (M AX )
|S
2 1E
|
2
GAIN BANDWIDTH PRODUCT (fT) vs
COLLECTOR CURRENT at VCE=3 V
0
2
4
6
8
10
12
1
1 0
100
C O LLEC T O R C U R RE N T (m A)
G
A
I
N
B
ANDW
I
D
T
H
(
G
H
z
)
NOISE FIGURE and ASSOCIATED GAIN at
VCE = 3 V, 1 GHz vs COLLECTOR CURRENT
0
1
2
3
4
5
6
7
8
9
10
1
10
10 0
C O LL EC T O R C U R R EN T (m A)
NO
I
S
E
F
I
G
URE
(d
B
)
AS
S
O
CI
AT
E
D
G
A
I
N
(d
B
)
N O IS E F IG U R E (50 O hm s)
AS SO C IATE D G AIN
N F
(O P T)
COLLECTOR-BASE CAPACITANCE (C
OB
)
vs COLLECTOR-BASE VOLTAGE
0 .4
0.45
0 .5
0.55
0 .6
0.65
1
10
C O L LE C TO R -B ASE VO LT AG E (Vo lts)
CO
L
L
.
-B
AS
E
CAP
ACI
T
ANCE
(p
F
)
GAIN vs COLLECTOR CURRENT at 2 GHz,
VCE=3 V
0
2
4
6
8
1 0
1 2
1
10
10 0
C O LL EC T O R C U R R EN T (m A)
GA
I
N
(
d
B
)
M AG
G TU (M AX )
|S
2 1 E
|
2
3 Volt, General Purpose Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6325 Series
Typical Performance Curves
(MP4T632535) Cont.
DC CURRENT GAIN (hFE) vs COLLECTOR
CURRENT at VCE = 3 V
40
50
60
70
80
90
1 00
0
5
1 0
15
20
25
C O L LE C TO R C U R R E N T (m A )
DC CURRE
NT
G
A
I
N
OUTPUT POWER at 1 dB COMPRESSION
POINT vs COLLECTOR CURRENT VCE=3V
0
2
4
6
8
10
12
5
10
1 5
20
2 5
30
C O LL EC T O R C U R R EN T (m A)
P
OU
T
- 1
d
B
(dB
m
)
f = 90 0 M H z
f = 2 G H z
PDF 
ZIP