Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Low OperatingVoltage, High f
T
Bipolar Microwave Transistors
MP4T6365
V2.00
Features
Designed for Battery Operation
f
T
to 10 GHz
Low Voltage Oscillator and Amplifier
Low Phase Noise and Noise Figure
Hermetic and Surface Mount Packages and
Chips Available
Can be Screened to JANTX, JANTXV Equivalent Levels
Description
The MP4T6365 family of low voltage, high gain band-
width silicon NPN bipolar transistors provides low noise
figure and high gain at low bias voltages. These transis-
tors are especially attractive for low operating voltage
low noise amplifiers or driver amplifiers at frequencies
to 4 GHz. They are also useful for low phase noise local
oscillators and VCOs in battery operated equipment to
10 GHz.
The MP4T6365 family was designed to have low noise
figure at operating voltages as low as 3 volts. These
transistors also exhibit low phase noise in VCOs
operating at 5 volts or less.
Because this transistor family was specifically designed
to perate from low bias voltage, it has superior phase
noise in comparison to similar current bipolar transistors
with higher collector breakdown voltage when operating
under the same low voltage conditions.
The MP4T6365 series transistors are available in
hermetic Micro-X packages, the SOT-23, the SOT-143,
and in chip form (MP4T636500). Other stripline and
hermetic packages are available. The chip and
hermetic packages can be screened to JANTX, JANTXV
equivalent levels. The plastic parts can be supplied on
tape and reel.
All of M-Pulse's silicon bipolar transistor families use
silicon dioxide and silicon nitride passivation to assure
low 1/F noise for amplifier and oscillator applications.
Case Styles
SOT-23
SOT-143
Chip
Micro-X
Low Operating Voltage, High f
T
Bipolar Microwave Transistors MP4T6365 Series
V2.00
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Maximum Ratings (TA = 25
C)
MP4T6365 Series
Collector-Base Voltage
V
CBO
10 V
Collector-Emitter Voltage
V
CE
6 V
Emitter-Base Voltage
V
EB
1.5 V
Collector Current
I
C
65 mA
Junction Operating Temperature
T
j
200
C
Storage Temperature
Chip or Ceramic Packages
T
S
-65
C to +200
C
Plastic Packages
-65
C to +125
C
Power Dissipation
Package Type
Maximum Dissipation
Maximum Operating
@ 25
C
Temperature
Chip (MP4T636500)
400 mW
175
C
SOT-23 (MP4T636533)
200 mW
125
C
Micro-X Package (MP4T636535)
300 mW
150
C
SOT-143 (MP4T636539)
225 mW
125
C
Electrical Specifications @ 25
C
MP4T6365 Series
Parameter of Test
Condition
Symbol
Units
MP4T636500
Chip
MP4T636535
Micro-X
MP4T636539
SOT-143
MP4T636533
SOT-23
Gain Bandwidth Product
V
CE
= 3 V
f
T
GHz
10 typ
10 typ
10 typ
10 typ
I
C
= 20 mA
Insertion Power Gain
V
CE
= 3 V
|S
21E
|
2
dB
I
C
= 10 mA
f = 1 GHz
14 typ
13 typ
13 typ
13 typ
f = 2 GHz
7.0 min
7.0 min
7.0 min
7.0 min
Noise Figure
V
CE
= 3 V
NF
dB
I
C
= 5 mA
f = 1 GHz
1.3 typ
1.3 typ
1.4 typ
1.4 typ
f = 2 GHz
1.6 typ
1.6 typ
1.7 typ
1.7 typ
Unilateral Gain
V
CE
= 3 V
GTU (max)
dB
I
C
= 5 mA
f = 1 GHz
15 typ
15 typ
14 typ
14 typ
f = 2 GHz
10 typ
10 typ
9 typ
9 typ
Maximum Available Gain
V
CE
= 3 V
MAG
dB
I
C
= 20 mA
f = 1 GHz
16 typ
16 typ
16 typ
16 typ
f = 2 GHz
12 typ
11 typ
10 typ
10 typ
Output Power at 1 dB
V
CE
= 3 V
P
1dB
dBm
Compression
I
C
= 20 mA
f = 2 GHz
16 typ
17 typ
16 typ
16 typ
f = 4 GHz
12 typ
13 typ
12 typ
12 typ
Low Operating Voltage, High fT Bipolar Microwave Transistors MP4T6365 Series
V2.00
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Electrical Specifications @ 25
C
Parameter
Condition
Symbol
Min
Typical
Max
Units
Collector Cut-off Current
V
CB
= 3 volts
I
CBO
100
A
I
E
= 0
A
Emitter Cut-off Current
V
EB
= 1 volt
I
EBO
1
A
I
C
= 0
A
Forward Current Gain
V
CE
= 3 volts
h
FE
30
75
200
I
C
= 5 mA
Collector-Base
V
CB
= 5 volts
C
OB
0.50
0.70
pF
Junction Capacitance
I
E
= 0
A
f = 1 MHz
Typical Common Emitter Scattering Parameters in the MIcro-X Package
MP4T636535, V
CE
= 3 Volts, I
C
= 5 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
500
0.640
-103
6.343
116.9
0.103
38.7
0.534
-75.2
1000
0.580
-153
3.984
91.5
0.123
29.0
0.346
-103.0
1500
0.571
-175
2.813
77.9
0.135
27.7
0.250
-124.9
2000
0.590
168
2.214
67.0
0.146
26.8
0.242
-140.4
2500
0.597
155
1.853
57.9
0.159
27.3
0.211
-150.2
3000
0.622
144
1.632
48.2
0.174
27.3
0.227
-164.1
3500
0.646
134
1.460
40.1
0.190
26.8
0.229
-168.0
4000
0.676
124
1.341
31.7
0.205
25.6
0.238
170.7
4500
0.712
115
1.241
23.7
0.218
24.1
0.255
167.9
5000
0.750
106
1.191
16.4
0.238
22.2
0.277
157.8
5500
0.793
96
1.130
8.4
0.257
20.2
0.310
153.0
6000
0.833
88
1.081
2.5
0.272
17.3
0.323
145.0
MP4T636535, V
CE
= 3 Volts, I
C
= 10 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
500
0.580
-142
8.562
104.6
0.066
39.1
0.389
-102.8
1000
0.589
-175
4.641
85.8
0.086
40.5
0.274
-132.0
1500
0.592
170
3.200
75.1
0.106
42.9
0.228
-158.1
2000
0.617
157
2.480
65.9
0.125
43.0
0.243
-169.4
2500
0.625
146
2.069
57.9
0.150
42.7
0.220
171.9
3000
0.652
136
1.811
48.9
0.172
40.8
0.250
166.9
3500
0.676
127
1.613
41.3
0.195
38.3
0.251
161.4
4000
0.707
118
1.479
33.3
0.218
35.1
0.270
150.2
4500
0.741
109
1.366
25.6
0.234
31.9
0.281
146.1
5000
0.776
100
1.311
18.5
0.259
28.1
0.311
135.9
5500
0.817
91
1.240
10.6
0.281
24.9
0.342
132.5
6000
0.855
82
1.118
3.0
0.298
20.5
0.351
125.1
Low Operating Voltage, High f
T
Bipolar Microwave Transistors MP4T6365 Series
V2.00
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Typical Common Emitter Scattering Parameters in the MIcro-X Package (Cont'd)
MP4T636535, V
CE
= 3 Volts, I
C
= 20 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
500
0.551
-160
9.374
99.1
0.048
46.7
0.321
-111.2
1000
0.567
177
4.916
84.2
0.071
52.5
0.238
-139.5
1500
0.577
164
3.373
74.7
0.094
54.2
0.217
-161.0
2000
0.599
153
2.613
66.4
0.117
53.2
0.223
-171.4
2500
0.611
143
2.174
58.9
0.144
52.0
0.214
168.4
3000
0.633
133
1.898
50.6
0.169
49.2
0.232
163.6
3500
0.659
125
1.690
43.4
0.194
45.9
0.242
159.3
4000
0.689
116
1.552
35.8
0.219
42.1
0.256
149.4
4500
0.724
107
1.444
28.4
0.238
38.3
0.274
144.3
5000
0.758
99
1.378
21.4
0.263
33.9
0.294
135.8
5500
0.800
90
1.309
13.5
0.287
30.0
0.319
130.4
6000
0.840
82
1.252
6.0
0.304
25.3
0.333
124.2
MP4T636535, V
CE
= 3 Volts, I
C
= 40 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
500
0.589
-173
9.150
93.6
0.044
55.7
0.275
-120.0
1000
0.604
141
5.202
80.8
0.067
59.2
0.220
-147.2
1500
0.620
159
3.505
70.8
0.094
58.6
0.210
-164.0
2000
0.642
149
2.685
62.2
0.119
56.4
0.210
174.3
2500
0.666
138
2.218
54.1
0.145
53.8
0.212
171.8
3000
0.681
128
1.935
45.9
0.172
50.0
0.220
168.3
3500
0.704
119
1.710
37.6
0.195
46.0
0.234
161.2
4000
0.738
110
1.560
29.8
0.218
41.9
0.248
153.7
4500
0.777
101
1.445
22.3
0.240
37.8
0.265
147.0
5000
0.819
92
1.365
14.5
0.262
33.7
0.283
140.6
5500
0.858
82
1.290
6.7
0.284
29.9
0.301
134.8
6000
0.896
73
1.228
-1.4
0.305
25.5
0.328
128.3
MP4T636535, V
CE
= 3 Volts, I
C
= 60 mA
Frequency
S11E
S21E
S12E
S22E
(MHz)
Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
500
0.604
-179
8.203
92.9
0.040
60.9
0.242
-112.0
1000
0.614
167
4.730
80.5
0.084
63.6
0.189
-139.1
1500
0.631
156
3.220
69.9
0.091
61.8
0.182
-155.9
2000
0.655
146
2.480
60.6
0.116
59.0
0.181
-168.3
2500
0.681
135
2.048
51.8
0.141
55.8
0.182
-172.5
3000
0.697
125
1.778
43.3
0.166
51.9
0.190
-174.3
3500
0.721
116
1.573
34.8
0.189
47.9
0.204
170.8
4000
0.758
107
1.430
26.8
0.211
43.9
0.217
164.7
4500
0.798
97
1.325
19.3
0.232
40.0
0.234
158.5
5000
0.843
88
1.255
11.4
0.254
36.2
0.253
152.9
5500
0.883
79
1.190
3.3
0.279
32.4
0.278
146.6
6000
0.922
69
1.125
-5.2
0.298
27.6
0.300
138.4
Low Operating Voltage, High fT Bipolar Microwave Transistors MP4T6365 Series
V2.00
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________ 5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6365
Typical Performance Curves
POWER DERATING CURVES
0
50
100
150
200
250
300
350
400
450
500
0
25
50
75
100
125
150
175
AMBIENT TEMP (7C)
TOTAL POWER
DISSIPATION (mW)
MP4T636500 Chip on
Infinite Heat Sink
MP4T636535 in
Micro-X Package
MP4T636533 in
SOT-23 Package
NOMINAL GAIN vs FREQUENCY at
V
CE
= 3 Volts, I
C
= 10 mA (MP4T636535)
0
4
8
12
16
20
24
1
10
FREQUENCY (GHz)
GAIN (dB)
GTU (MAX)
|S
21E
|2
2
5
NOMINAL COLLECTOR-BASE CAPACITANCE (C
OB
)
vs COLLECTOR-BASE VOLTAGE (MP4T636535)
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
5
10
15
COLLECTOR-BASE VOLTAGE
(Volts)
COLLECTOR-BASE
CAPACITANCE (pF)
NOMINAL GAIN vs COLLECTOR CURRENT at
f = 1.0 GHz, V
CE
= 3 Volts (MP4T636535)
11
12
13
14
15
16
17
18
19
20
1
10
100
COLLECTOR CURRENT (mA)
GAIN (dB)
GTU (MAX)
|S
21E
|2
MAG
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