Specification Subject to Change Without Notice
M
M-Pulse Microwave__________________________________________________________________________________
1
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
Low Current 8 Volt, Low Noise
High fT Silicon Transistor
MP4T6825 Series
Features
Low Current Operation
High fT (8 GHz)
Low Noise Figure with 1-5 mA Current
Low Phase Noise
Inexpensive
Available on Tape and Reel
Description
The MP4T6825 series of low current silicon bipolar
transistors provide low noise figure at a bias of 5-10 volts
and collector current of 1-5 mA. These inexpensive surface
mount transistors are useful for low noise amplifiers and
VCOs from VHF through 2.5 GHz.
The MP4T6825 series has high fT (8 GHz) and provides
approximately 1.5 dB noise figure with 1-3 mA current.
These transistors also have low phase noise when used in 5-
10 volt low current VCOs through 3 GHz.
The MP4T6825 series are inexpensive transistors designed
for RF systems that require low current drain. This family of
transistors is available in chip (MP4T682500), SOT-23
(MP4T682533), SOT-143 (MP4T682539), and in the Micro-
X (MP4T682535) packages. Surface mount packages are
available on tape and reel.
Absulote Maximum Ratings at 25
C
Parameter Absolute
Maximum
Collector-Base Voltage
20V
Collector-Emitter Voltage
12 V
Emitter-Base Voltage
1.5 V
Collector Current
25 mA
Junction Temperature
+200
C
2
Storage Temperature
Chips or Ceramic Packages
-65
C to +200
C
Plastic Packages
-65
C to +150
C
Power Dissipation
1
1.
See power derating curves.
2.
Die or ceramic packages -150
C for plastic pacakges.
SOT-23
SOT-143
Chip
Low Current 8 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
2
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6825 Series
Electrical Specifications at 25
C
Symbol Parameters Test
Condition
s
Units MP4T682500
Chip
MP4T682533
SOT-23
MP4T682535
Micro-X
MP4T682539
SOT-143
fT Gain
Bandwidth
Product
V
CE
= 8V
I
C
= 8 mA
GHz
8 typ.
8 typ.
8 typ.
8 typ.
|S
21E
|
2
Insertion
Power
Gain
V
CE
= 8V
I
C
= 8 mA
f = 1 GHz
f = 2 GHz
dB
15 typ.
8 typ.
14 typ.
7 typ.
15 typ.
8 min.
14 typ.
7 typ.
NF Noise
Figure
V
CE
= 8V
I
C
= 2 mA
f = 1 GHz
f = 2 GHz
dB
1.8 max.
2.1 typ.
1.9 max.
2.2 typ.
1.8 max.
2.1 typ.
1.9 max.
2.2 typ.
GTU (max) Unilateral Gain
V
CE
= 8V
I
C
= 8 mA
f = 1 GHz
f = 2 GHz
dB
17 typ.
11 typ.
16 typ.
10 typ.
17 typ.
11 typ.
16 typ.
10 typ.
MAG Maximum
Available Gain
V
CE
= 8V
I
C
= 8 mA
f = 1 GHz
f = 2 GHz
dB
18 typ.
13 typ.
17 typ.
12 typ.
18 typ.
13 typ.
17 typ.
12 typ.
P
1dB
Power Out at 1dB
Compression
V
CE
= 8V
I
C
= 15 mA
f = 1 GHz
f = 2 GHz
dBm
15 typ.
13.5 typ.
14 typ.
12.5 typ.
14 typ.
12.5 typ.
15 typ.
13.5 typ.
R
TH (J-A)
Thermal
Resistance
Junction/
Ambient
(Free Air)
C
650 typ.
500 typ.
625 typ.
R
TH (J-C)
Thermal
Resistance
Junction/
Case
C/W
70 max.
1
200 typ.
200 typ.
200 typ.
1. Junction to infinite heat sink.
Electrical Specifications at 25
C
Parameters Conditions
Symbol
Min.
Typ.
Max.
Units
Collector Cut-off Current
V
CB
= 8 V
I
E
= 0
I
CBO
100 nA
Emitter Cut-off Current
V
EB
= 1 V
I
C
= 0
I
EBO
1
A
Forward Current Gain
V
CE
= 8 V
I
C
= 5 mA
h
FE
30
110
250
Collector-Base
Junction Capacitance
V
CB
= 8 V
I
E
= 0
f = 1 MHz
C
OB
0.25 0.40 pF
Low Current 8 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
3
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6825 Series
MP4T682535
Typical Scattering Parameters in the MIcro-X Package
VCE = 8 Volts, IC = 5 mA
Frequency S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag.
Angle
Mag
Angle
100
0.66 -15.7
12.95 164.7 0.01 86.0 0.97 -6.7
300
0.54 -42.2
10.74 139.8 0.02 71.9 0.88 -16.8
500
0.41 -61.2 8.54 122.7 0.03 66.4 0.79 -22.4
700
0.32 -75.3 6.91 110.8 0.04 64.7 0.73 -25.9
900
0.25 -86.9 5.74 101.8 0.05 63.8 0.69 -28.5
1500 0.14
-115.2
3.75
83.3
0.08
62.0 0.63
-35.5
1900 0.11
-142.6
3.10
73.1
0.10
59.1 0.61
-42.1
2500 0.09
143.9
2.46
60.6
0.12
55.6 0.58
-50.5
2900 0.10
128.4
2.15
52.1
0.14
53.0 0.56
-55.7
3300 0.10
108.0
1.95
47.2
0.15
51.1 0.56
-61.2
3900 0.15
92.4
1.72
35.9
0.17
46.7 0.53
-69.6
4500 0.17
79.4
1.56
26.4
0.20
45.0 0.53
-79.6
4900 0.20
69.5
1.50
19.4
0.21
42.2 0.52
-85.3
5500 0.23
58.8
1.35
9.9
0.23
37.9 0.50
-92.9
VCE = 8 Volts, IC = 10 mA
Frequency S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag.
Angle Mag
Angle
100 0.49
-22.0
17.06
160.4
0.01
87.0
0.96
-7.9
300 0.36
-55.9
12.71
131.5
0.02
71.9
0.83
-17.6
500 0.26
-78.4
9.37
114.5
0.03
68.8
0.74
-21.5
700 0.20
-96.0
7.28
103.5
0.04
68.8
0.70
-24.0
900 0.13
-125.3
4.93
88.8
0.06
67.8
0.65
-28.6
1500 0.10
-152.7
3.76
78.7
0.07
65.9 0.63
-33.4
1900 0.11
160.2
3.07
69.0
0.09
63.6 0.61
-40.0
2500 0.13
134.4
2.43
57.3
0.12
59.2 0.58
-48.9
2900 0.14
115.4
2.12
49.2
0.13
56.7 0.57
-54.4
3300 0.15
102.3
1.92
44.2
0.15
54.4 0.57
-60.7
3900 0.20
90.5
1.70
33.3
0.17
50.2 0.54
-69.3
4500 0.27
79.2
1.53
23.4
0.19
47.8 0.54
-80.0
4900 0.25
70.0
1.48
16.4
0.21
45.0 0.53
-86.0
5500 0.29
59.3
1.32
6.8
0.23
40.5 0.51
-94.2
VCE = 8 Volts, IC = 20 mA
Frequency S11E
S21E
S12E
S22E
(MHz) Mag.
Angle
Mag.
Angle
Mag.
Angle Mag
Angle
100 0.26
-48.6
17.16
154.3
0.01
84.7
0.93
-0.8
300 0.22
-105.7
10.98
122.3
0.02
72.6
0.80
-14.8
500 0.20
-136.0
7.55
106.7
0.02
71.5
0.75
-17.3
700 0.20
-155.8
5.70
97.0
0.03
72.3
0.72
-19.8
900 0.20
-169.8
4.56
89.8
0.04
72.5
0.70
-22.4
1500 0.22
161.3
2.88
74.1
0.06
70.7 0.68
-31.3
1900 0.24
146.4
2.34
64.4
0.08
68.6 0.67
-38.4
2500 0.27
126.6
1.86
53.1
0.10
65.6 0.64
-48.2
2900 0.29
115.1
1.63
45.1
0.12
64.1 0.63
-54.5
3300 0.31
104.4
1.49
39.5
0.14
61.9 0.63
-61.5
3900 0.36
92.3
1.33
29.7
0.16
58.3 0.61
-70.7
Low Current 8 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
4
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6825 Series
4500 0.39
79.7
1.20
18.5
0.19
55.5 0.59
-81.0
4900 0.42
70.1
1.15
11.5
0.20
52.7 0.58
-88.0
5500 0.46
57.6
1.02
2.9
0.23
48.2 0.56
-96.7
Low Current 8 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
5
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6825 Series
Typical Performance Curves (MP4T682535)
POWER DERATING CURVES
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
3 0 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
1 8 0
2 0 0
A M B I E N T T E M P E R A T U R E (C )
P
O
W
E
R DI
S
S
I
P
A
T
I
O
N
(m
W
)
M P 4 T 6 8 2 5 0 0 (C H I P ) O N I N F I N I T E H E A T S I N K
M P 4 T 6 8 2 5 3 5
(M I C R O -X )
M P 4 T 6 8 2 5 3 3 , 3 9
( S O T -2 3 , 1 4 3 ) F R E E A I R
GAIN vs FREQUENCY at VCE=8 V and IC =
5 mA
0
5
1 0
1 5
2 0
2 5
1
10
F R EQ U EN C Y (G H z)
GA
I
N
(
d
B
)
GT U (M A X )
|S
21 E
|
2
GAIN BANDWIDTH PRODUCT (fT) vs
COLLECTOR CURRENT at VCE=8 V
0
1
2
3
4
5
6
7
8
9
1 0
1
10
10 0
C O LL EC TO R C U R R E N T (m A)
G
A
I
N
B
ANDW
I
D
T
H
(
G
H
z
)
NOISE FIGURE and ASSOCIATED GAIN at
VCE = 8 V, 1 GHz vs COLLECTOR CURRENT
0
2
4
6
8
1 0
1 2
1 4
1 6
1 8
2 0
1
1 0
1 00
C O L L EC TO R C U R R EN T (m A )
NO
I
S
E
F
I
G
URE
(d
B
)
AS
S
O
CI
AT
E
D
G
A
I
N
(d
B
)
N O IS E F IG U R E
A SS O C IAT E D G A IN
COLLECTOR-BASE CAPACITANCE (C
OB
)
vs COLLECTOR-BASE VOLTAGE
0
0 .0 5
0.1
0 .1 5
0.2
0 .2 5
0.3
0 .3 5
1
1 0
1 00
C O L L EC T O R -B AS E V O L TA G E (V o lts)
CO
L
L
.
-B
AS
E
CAP
ACIT
ANCE
(p
F
)
GAIN vs COLLECTOR CURRENT at 1
GHz, VCE=8 V
6
8
1 0
1 2
1 4
1 6
1 8
2 0
2 2
1
10
10 0
C O LL EC T O R C U R R EN T (m A)
GA
I
N
(
d
B
)
M A G
G TU (M AX )
|S
2 1 E
|
2
Low Current 8 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
6
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6825 Series
Typical Performance Curves
(MP4T682535) Cont.
DC CURRENT GAIN (hFE) vs
COLLECTOR CURRENT at VCE = 8 V
50
60
70
80
90
1 00
1 10
1 20
1
10
10 0
C O L LEC T O R C U R R EN T (m A)
DC CURRE
NT
G
A
I
N
OUTPUT POWER at 1 dB COMPRESSION POINT vs
COLLECTOR CURRENT VCE=8V
0
2
4
6
8
10
12
14
16
0
5
1 0
15
2 0
25
C O LL EC T O R C U R R EN T (m A)
P
OU
T
- 1
d
B
(dB
m
)
f = 1 G H z
f = 2 GH z
Low Current 8 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse Microwave____________________________________________________________________________________
7
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6825 Series
Case Styles
Chip - MP4T682500
BASE
EMITTER
D THICKNESS
A
C 2 PLCS.
B
SOT-23 - MP4T682533
F
D
H
J
A
G
L
C
E
B
K
N
M
C ollector
E m itter
B ase
MP4T682500
DIM. INCHES
(Nominal) MM
(Nominal)
A 0.013
0.35
B 0.013
0.35
C 0.0016
0.040
D 0.0045
0.11
MP4T682533
INCHES
MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A
0.044
1.12
B
0.004
0.10
C
0.040
1.00
D 0.013
0.020
0.35 0.50
E 0.003
0.006
0.08 0.15
F 0.110
0.119
2.80 3.00
G 0.047
0.056
1.20 1.40
H
0.037 typical
0.95 typical
J
0.075 typical
1.90 typical
K
0.103
2.60
L
0.024
0.60
DIM. GRADIENT
M
10
max.
1
N
2
. . . 30
NOTE:
1. Applicable on all sides
Low Current 8 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse
Microwave_____________________________________________________________________________
_______ 8
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6825 Series
Case Styles (Con't)
Micro-X - MP4T682535
Collector
Emitter
B
E
F
4 PLCS.
C
G
Base
H
Emitter
D
A
SOT-143 - MP4T682539
G
J
E
K
A
H
M
C
F
B
L
P
N
C ollector E m itter
E m itter
B ase
D
Low Current 8 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse
Microwave_____________________________________________________________________________
_______ 9
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6825 Series
MP4T682535
INCHES
MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.092
0.108
2.34 2.74
B 0.079
0.087
2.01 2.21
C
0.070
1.78
D 0.019
0.025
0.48 0.64
E 0.018
0.022
0.046
0.56
F 0.150
3.81
G 0.003
0.006
0.08 0.15
H
45
45
MP4T682539
INCHES
MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A
0.044
1.10
B
0.044
1.10
C
0.040
1.00
D 0.030
0.035
0.75 0.90
E 0.013
0.020
0.35 0.50
F 0.003
0.006
0.08 0.15
G 0.110
0.119
2.80 3.00
H 0.047
0.056
1.20 1.40
J
0.075 typical
1.90 typical
K
0.075 typical
1.90 typical
L
0.103
2.6
M
0.024
0.6
DIM. GRADIENT
N
10
max.
1
P
2
. . . 30
Low Current 8 Volt, Low Noise High fT Silicon Transistor
Specification Subject to Change Without Notice
M-Pulse
Microwave_____________________________________________________________________________
_______ 10
576 Charcot Avemue, San Jose, California 95131
Tel (408) 432-1480 Fax (408)) 432-3440
MP4T6825 Series
NOTE:
1. Applicable on all sides
PDF 
ZIP