Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0670
V4.00
Features
Cascadable 50
Gain Block
3dB Bandwidth: DC to 0.8 GHz
18.5 dB Typical Gain @ 0.5 GHz
Unconditionally Stable (k>1)
Low Voltage Operation
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0670 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package for surface mount usage. The MP4TD0670 is
useful where a general purpose 50
gain block with
lower (3.0 dB) noise figure is required. Typical
applications include narrow and wide band IF and RF
amplifiers in industrial and military applications.
The MP4TD0670 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
2
4
6
8
1 0
1 2
1 4
1 6
1 8
2 0
2 2
0.1
1
1 0
FR E Q U E N C Y (G H z)
GAI
N (
d
B)
Id= 1 6 m A
Gold-Ceramic Microstrip Package Outline
1,2
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 .030
12,57 0,76
.004 .002
0,10,05
.035
0,89
.070
1,78
.020
0,51
.040
1,02
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
.005; mm .xx =
.13
Pin Configuration
Pin Number
Pin Description
1 RF
Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias
Ordering Information
Model No.
Package
MP4TD0670 Ceramic
MP4TD0670T
Tape and Reel
Electrical Specifications @ T
A
= +25
C, Id = 16 mA, Z0 = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
18.5
19.5
22
Gp
Gain Flatness
f = 0.1 to 0.6 GHz
dB
-
0.7
1.0
f
3 dB
3 dB Bandwidth
-
GHz
-
0.8
-
SWR
in
Input SWR
f = 0.1 to 1.5 GHz
-
-
1.8
-
SWR
out
Output SWR
f = 0.1 to 1.5 GHz
-
-
1.8
-
P
1 dB
Output Power @ 1 dB Gain Compression
f = 0.5 GHz
dBm
-
4.5
-
NF
50
Noise Figure
f = 0.5 GHz
dB
-
3.0
3.5
IP
3
Third Order Intercept Point
f = 0.5 GHz
dBm
-
14.5
-
t
D
Group Delay
f = 0.5 GHz
ps
-
200
-
V
d
Device
Voltage
-
V 3.1 3.5
3.9
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -8.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0670
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
50 mA
Power Dissipation
2,3
200
mW
RF Input Power
+20 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jc
= 150
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate at 6.7 mW/
C for Tc > 170
C.
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 5.5 V
Vd =3.5 V
Id =
Vcc - Vd
Rbias
MP4TD0670
Typical Performance Curves @ Id = 16 mA, TA = +25
C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
5
10
15
20
25
0
1
2
3
4
Vd, DEVICE VOLTAGE (V)
Id
, DEVICE CURRENT (m
A)
POWER GAIN vs CURRENT
0
5
1 0
1 5
2 0
2 5
1 0
15
2 0
2 5
3 0
3 5
40
Id, D E VIC E C U R R E N T (m A)
GAI
N
(
d
B)
0.1 G H z
0.5 G H z
1 .0 G H z
2.0 G H z
RETURN LOSS vs FREQUENCY
-3 0
-2 5
-2 0
-1 5
-1 0
-5
0
0 .1
1
1 0
FR E Q U E N C Y (G H z)
RETURN LOSS (
d
B)
Input
O utput
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
0
2
4
6
8
1 0
1 2
0.1
1
1 0
FR E Q U E N C Y (G H z)
P
OU
T
- 1dB
(dB
m
)
Id= 1 6 m A
Id= 2 0 m A
Id= 30 m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0670
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
2
2 .5
3
3 .5
4
4 .5
5
0 .1
1
1 0
F R E Q U E N C Y (G H z)
NOI
S
E FI
GURE (
d
B)
Id= 16 m A
Id= 12 m A
Id= 20 m A
REVERSE ISOLATION vs FREQUENCY
-2 3
-2 1
-1 9
-1 7
-1 5
-1 3
-1 1
0 .1
1
1 0
FR E Q U E N C Y (G H z)
REVERSE I
S
OLATI
O
N (
d
B)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 16 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.055
-153.1
9.47
171.0 0.076 5.8 0.053 -55.9
0.2 0.068
-148.6
9.30
162.3 0.077 8.4 0.092 -79.0
0.3 0.094
-134.8
8.90
154.3 0.080 16.3 0.131 -101.8
0.4 0.111
-135.4
8.57
146.3 0.083 20.2 0.165 -113.0
0.5 0.134
-133.4
8.29
138.8 0.089 24.9 0.194 -123.2
0.6 0.156
-138.3
7.78
131.9 0.096 27.3 0.215 -135.2
0.7 0.175
-139.3
7.41
125.1 0.103 28.2 0.237 -142.7
0.8 0.200
-140.2
6.93
119.7 0.106 30.6 0.254 -153.5
0.9 0.224
-143.2
6.54
114.0 0.109 31.2 0.266 -159.7
1.0 0.243
-147.8
6.09
109.0 0.118 33.8 0.277 -167.4
1.5 0.334
-164.4
4.55
87.9 0.143 36.5 0.292 167.5
2.0 0.408
177.9
3.48
73.0 0.163 35.7 0.278 148.9
2.5 0.474
163.1
2.79
60.9 0.183 36.2 0.236 135.8
3.0 0.513
150.8
2.34
52.9 0.191 38.3 0.218 130.1
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