Specification Subject to Change Without Notice
M/A-COM, Inc.
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0800
Features
Cascadable 50
Gain Block
High Gain: 32.5 dB Typical Gain @ 0.1 GHz
18.5 dB Typical Gain @ 1.0 GHz
Low Noise Figure: 3.2 dB Typical @ 1.0 Ghz
Unconditionally Stable (k>1)
Description
M-Pulse's MP4TD0800 is a high performance silicon
bipolar MMIC chip. The MP4TD0800 is designed for
use where a low noise (3.2 dB typical) general purpose
50
gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial
and military applications.
The MP4TD0800 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
5
1 0
1 5
2 0
2 5
3 0
3 5
0.1
1
1 0
F R EQ U E N C Y (G H z)
GA
I
N
(
d
B
)
Id= 3 6m A
Chip Outline Drawing
1,2,3,4
RF Input
Ground
Optional RF Output & +7.8 Volt
375
(14.8 mil)
375 (14.8 mil)
Notes: (unless otherwise specified)
1.
Chip Thickness is 120
m; 4.8 mils
2.
Bond Pads are 40
m; 1.6 mils typical in diameter
3. RF Output Contact & +DC Voltage Is Normally Made On
Backside Of Chip At Die Attach
4. Tolerance:
m .xx =
.13; mil .x =
.5
Ordering Information
Model No.
Package
MP4TD0800G Gel
Pack
MP4TD0800W Waffle
Pack
Electrical Specifications @ T
A
= +25
C, Id = 36 mA, Z0 = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
-
32.5
-
f = 1.0 GHz
dB
-
18.5
-
f = 4.0 GHz
dB
-
7.0
-
SWR
in
Input SWR
f = 0.3 to 3.0 GHz
-
-
2.0
-
SWR
out
Output SWR
f = 0.4 to 3.0 GHz
-
-
1.7
-
P
1dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
dBm
-
14.0
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
3.2
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
27.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
125
-
V
d
Device
Voltage
-
V 7.0 7.8 8.4
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -17.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0800
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
80 mA
Power Dissipation
2,3
750
mW
RF Input Power
+20 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +200
C
Thermal Resistance:
jms
= 70
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (TMS) = 25
C.
3. Derate at 14.3 mW/
C for TMS > 147
C.
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 10 V
Vd = 7.8 V
Id =
Vcc - Vd
Rbias
MP4TD0800
Typical Performance Curves @ Id = 36 mA, TA = +25
C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
5
1 0
1 5
2 0
2 5
3 0
3 5
4 0
0
2
4
6
8
10
Vd, D EVIC E V O L TAG E (V)
I
d
,
DE
VI
CE
CURRE
NT
(
m
A
)
POWER GAIN vs CURRENT
0
5
1 0
1 5
2 0
2 5
3 0
3 5
1 0
20
30
4 0
50
Id, D E VIC E C U R R EN T (m A)
GA
I
N
(
d
B
)
0.1 G H z
1.0 G H z
2.0 GH z
3.0 GH z
RETURN LOSS vs FREQUENCY
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
0.1
1
1 0
F R E QU E N C Y (G H z)
RE
T
URN L
O
S
S
(
d
B
)
Inp ut
O u tp ut
P
OUT
@ -1DB GAIN COMPRESSION
vs FREQUENCY
4
6
8
1 0
1 2
1 4
1 6
1 8
0 .1
1
1 0
FR E Q U EN C Y (G H z)
P
OU
T
- 1
d
B
(dB
m
)
Id= 3 6m A
Id = 40 m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0800
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
2
2 .5
3
3 .5
4
4 .5
0.1
1
1 0
F R E QU E N C Y (G H z)
NO
I
S
E
F
I
G
URE
(
d
B
)
Id= 2 0m A
I d= 3 6m A
I d= 4 0m A
REVERSE ISOLATION vs FREQUENCY
-40
-35
-30
-25
-20
-15
-10
-5
0
0.1
1
1 0
F R E QU E N C Y (G H z)
RE
VE
RS
E
I
S
O
L
AT
I
O
N (
d
B
)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 36 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1
0.656
-47.8 43.53 32.7 0.017 60.8 0.607
-52.7
0.2
0.471
-77.1 32.73 30.3 0.020 50.1 0.485
-89.4
0.4
0.311
-109.9
19.51 25.8 0.043 51.5 0.391
-129.5
0.6
0.360
-130.3
13.69 22.7 0.057 58.9 0.355
-151.2
0.8
0.242
-142.5
10.56 20.4 0.069 61.4 0.340
-165.9
1.0
0.233
-151.1 8.56 18.6 0.082 63.0 0.323
-176.4
1.5
0.239
-165.7 5.83 15.3 0.116 64.0 0.300
165.6
2.0
0.271
-178.4 4.50 13.0 0.141 61.6 0.287
151.7
2.5
0.277
168.8 3.60 11.1 0.166 61.5 0.235
140.4
3.0
0.296
160.1 2.95 9.3 0.187 61.3 0.195
137.3
3.5
0.334
152.2 2.56 8.1 0.206 59.3 0.168
140.2
4.0
0.363
140.9 2.27 7.1 0.227 60.5 0.155
145.5
4.5
0.407
131.5 2.03 6.1 0.236 57.9 0.169
153.1
5.0
0.455
120.3 1.87 5.4 0.249 60.5 0.204
155.7
6.0 0.556 99.1 1.56 3.9 0.288 62.8 0.309
151.7
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