Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0870
Features
Cascadable 50
Gain Block
High Gain: 32.5 dB Typical Gain @ 0.1 GHz
18.5 dB Typical Gain @ 1.0 GHz
Low Noise Figure: 3.2 dB Typical @ 1.0 GHz
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
Unconditionally Stable (k>1)
Description
M-Pulse's MP4TD0870 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package. The MP4TD0870 is useful where a general
purpose 50
gain block with low (3.2 dB typical) noise
figure is required. Typical applications include narrow
and wide band IF and RF amplifiers in industrial and
military applications.
The MP4TD0870 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
5
10
15
20
25
30
35
0.1
1
10
FR EQU EN C Y (GH z)
G
A
IN (dB)
Id=36mA
Gold-Ceramic Microstrip Package Outline
1,2
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 .030
12,57 0,76
.004 .002
0,10,05
.035
0,89
.070
1,78
.020
0,51
.040
1,02
Notes: (unless otherwise specified)
1.
Dimensions are in / mm
2.
Tolerance: in .xxx =
.005; mm .xx =
.13
Pin Configuration
Pin Number
Pin Description
1 RF
Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias
Ordering Information
Model No.
Package
MP4TD0870 Ceramic
MP4TD0870T
Tape and Reel
Electrical Specifications @ T
A
= +25
C, Id = 36 mA, Z0 = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
-
32.5
-
f = 1.0 GHz
dB
17.5
18.5
19.0
f = 4.0 GHz
dB
-
7.0
-
SWR
in
Input SWR
f = 0.3 to 3.0 GHz
-
-
2.0
-
SWR
out
Output SWR
f = 0.4 to 3.0 GHz
-
-
1.5
-
P
1dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
dBm
-
12.5
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
3.2
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
27.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
125
-
V
d
Device
Voltage
-
V 7.0 7.8 8.4
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -17.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0870
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
80 mA
Power Dissipation
2,3
750
mW
RF Input Power
+20 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +150
C
Thermal Resistance:
jc
= 150
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate at 6.7 mW/
C for Tc > 69
C.
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 10 V
Vd = 7.8 V
Id =
Vcc - Vd
Rbias
MP4TD0870
Typical Performance Curves @ Id = 36 mA, TA = +25
C (unless otherwise noted)
DEVICE CURRENT vs DEVICE VOLTAGE
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
Vd, D EVIC E VO LTAGE (V)
Id
, DEVICE CURRENT (m
A)
POWER GAIN vs CURRENT
0
5
10
15
20
25
30
35
10
20
30
40
50
Id, D EVIC E C U R R EN T (mA)
G
A
IN (dB)
0.1 GH z
1.0 GH z
2.0 GH z
3.0 GH z
RETURN LOSS vs FREQUENCY
0
5
10
15
20
25
30
35
10
20
30
40
50
Id, D EVIC E C U R R EN T (mA)
G
A
IN (dB)
0.1 GH z
1.0 GH z
2.0 GH z
3.0 GH z
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
4
6
8
10
12
14
16
18
0.1
1
10
FR EQU EN C Y (GH z)
P
OU
T
- 1dB (dBm)
Id=36mA
Id=40mA
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0870
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
2
2.5
3
3.5
4
4.5
0.1
1
10
FR EQU EN C Y (GH z)
NO
IS
E FIG
URE (d
B)
Id=20mA
Id=36mA
Id=40mA
REVERSE ISOLATION vs FREQUENCY
-40
-35
-30
-25
-20
-15
-10
-5
0
0.1
1
10
FR EQU EN C Y (GH z)
REVERS
E IS
O
LATIO
N (d
B)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 36mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.656
-47.8
43.53
32.7 0.017 60.8 0.607 -52.7
0.2 0.471
-77.1
32.73
30.3 0.020 50.1 0.485 -89.4
0.4 0.311
-109.9
19.51
25.8 0.043 51.5 0.391
-129.5
0.6 0.360
-130.3
13.69
22.7 0.057 58.9 0.355
-151.2
0.8 0.242
-142.5
10.56
20.4 0.069 61.4 0.340
-165.9
1.0 0.233
-151.1
8.56
18.6 0.082 63.0 0.323
-176.4
1.5 0.239
-165.7
5.83
15.3 0.116 64.0 0.300 165.6
2.0 0.271
-178.4
4.50
13.0 0.141 61.6 0.287 151.7
2.5 0.277
168.8
3.60
11.1 0.166 61.5 0.235 140.4
3.0 0.296
160.1
2.95
9.3 0.187 61.3 0.195
137.3
3.5 0.334
152.2
2.56
8.1 0.206 59.3 0.168
140.2
4.0 0.363
140.9
2.27
7.1 0.227 60.5 0.155
145.5
4.5 0.407
131.5
2.03
6.1 0.236 57.9 0.169
153.1
5.0 0.455
120.3
1.87
5.4 0.249 60.5 0.204
155.7
6.0 0.556
99.1
1.56
3.9 0.288 62.8 0.309
151.7
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