Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0920
Features
Cascadable 50
Gain Block
3dB Bandwidth: DC to 4.0 GHz
7.5 dB Typical Gain @ 1.0 GHz
Low SWR: <1.6:1 from 0.1 to 3.0 GHz
Hermetic Gold-BeO Microstrip Package
The 20 package allows higher power operation
Description
M-Pulse's MP4TD0920 is a high performance silicon bipolar
MMIC housed in a hermetic high reliability package. The
MP4TD0920 is designed for use where a general purpose 50
gain block is required. Typical applications include narrow and
wide band IF and RF amplifiers in industrial and military
applications. The 20 style package is a superior thermal
dissipation package. This allows larger DC Current and the
resultant improvement in ouput power and P1dB performance
than that available from the packages for this chip.
The MP4TD0920 is fabricated using a 10 GHz fT silicon bipolar
technology that features gold metalization and IC passivation
for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
2
4
6
8
1 0
1 2
0.1
1
1 0
FR E Q U E N C Y (G H z)
GAI
N (
d
B)
Id= 3 5 m A
Gold-BeO Microstrip Package Outline
1,2
0.060
1.525
0.030
0.762
0.30
7.62
TYP.
0.132
5.42
DIA
0.205
5.21
DIA
0.020
0.51
0.053
1.35
0.003
0.076
1
2
4
3
Notes: (unless otherwise specified)
1.
Dimensions are in / mm
2.
Tolerance: in .xxx =
.005; mm .xx =
.13
Pin Configuration
Pin Number
Pin Description
1 RF
Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias
Ordering Information
Model No.
Package
MP4TD0920 BeO
Ceramic
Electrical Specifications @ T
A
= +25
C, Id = 35 mA, Z0 = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
6.5
7.5
8.5
Gp
Gain Flatness
f = 0.1 to 2.0 GHz
dB
-
0.5
0.7
f
3 dB
3 dB Bandwidth
-
GHz
-
4.0
-
SWR
in
Input SWR
f = 0.1 to 3.0 GHz
-
-
1.4
-
SWR
out
Output SWR
f = 0.1 to 3.0 GHz
-
-
1.6
-
P
1 dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
dBm
-
11.5
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
6.0
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
23.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
100
-
V
d
Device
Voltage
-
V 7.0 7.8 8.6
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -16.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0920
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
80 mA
Power Dissipation
2,3
750
mW
RF Input Power
+20 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +150
C
Thermal Resistance:
jc
= 145
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate at 6.9 mW/
C for Tc > 91
C.
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 10 V
Vd = 7.8 V
Id =
Vcc - Vd
Rbias
MP4TD0920
Typical Performance Curves @ Id = 35 mA, TA = +25
C (unless otherwise noted)
DEVICE CURRENT DEVICE VOLTAGE
0
1 0
2 0
3 0
4 0
5 0
6 0
0
2
4
6
8
10
Vd, D E VIC E VO L T AG E (V)
I
d
, DEVI
CE CURRENT (
m
A)
POWER GAIN vs CURRENT
2
3
4
5
6
7
8
9
0
20
4 0
6 0
80
Id, D E VIC E C U R R E N T (m A)
GAI
N
(
d
B)
f= 0 .1 G H z
f= 1 .0 G H z
f= 2 .0 G H z
RETURN LOSS vs FREQUENCY
-3 0
-2 5
-2 0
-1 5
-1 0
-5
0
0 .1
1
1 0
FR E Q U E N C Y (G H z)
RETURN LOSS (
d
B)
Input
O utput
P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
4
6
8
1 0
1 2
1 4
1 6
0.1
1
1 0
F R E Q U E N C Y (G H z)
P
OU
T
- 1dB
(dB
m
)
Id= 3 5 m A
Id= 4 5 m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0920
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
5
6
7
8
0 .1
1
1 0
FR E Q U E N C Y (G H z)
NOI
S
E FI
GURE (
d
B)
Id= 2 5 m A
Id= 3 5m A
Id= 4 5 m A
REVERSE ISOLATION vs FREQUENCY
-13 .8
-13 .6
-13 .4
-13 .2
-1 3
-12 .8
-12 .6
-12 .4
0 .1
1
1 0
FR E Q U E N C Y (G H z)
REVERSE I
S
OLATI
O
N (
d
B)
Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 35 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.164
-148.8
2.60
164.8 0.208 4.9 0.17 -143.6
0.2 0.149
-164.2
2.53
165.5 0.208 2.9 0.15 -156.2
0.3 0.144
-170.5
2.52
162.8 0.209 2.4 0.15 -159.6
0.4 0.139
-173.4
2.50
159.2 0.208 2.7 0.15 -160.4
0.5 0.135
-174.2
2.49
155.5 0.210 3.2 0.15 -161.5
0.6 0.128
-177.0
2.48
151.6 0.209 3.1 0.16 -161.2
0.7 0.124
-178.1
2.47
147.4 0.211 3.2 0.16 -161.5
0.8 0.120
-178.9
2.46
143.4 0.211 2.8 0.17 -161.8
0.9 0.113
-178.8
2.45
139.4 0.214 3.9 0.17 -162.4
1.0 0.109
179.5
2.45
135.2
0.215 3.9 0.18
-162.5
1.1 0.098
178.6
2.42
131.1
0.214 3.5 0.18
-163.2
1.2 0.095
178.2
2.40
127.3
0.216 4.1 0.19
-164.6
1.3 0.094
179.5
2.39
123.5
0.215 4.2 0.20
-165.0
1.4 0.094
-178.4
2.38
119.1 0.216 4.2 0.21 -165.5
1.5 0.090
-174.7
2.36
114.9 0.219 4.2 0.21 -164.7
1.6 0.082
-170.0
2.33
110.9 0.218 4.0 0.21 -166.3
1.7 0.074
-162.9
2.32
107.7 0.220 4.3 0.20 -165.5
1.8 0.068
-160.2
2.32
103.8 0.223 4.2 0.19 -167.6
1.9 0.066
-157.2
2.28
99.8 0.223 4.6 0.19 -170.1
2.0 0.060
-163.8
2.25
96.9 0.223 5.0 0.19 -174.4
2.1 0.060
-162.5
2.26
93.1 0.224 5.1 0.20 -177.7
2.2 0.065
-162.8
2.21
89.1 0.226 4.6 0.21 -178.0
2.3 0.070
-166.2
2.17
85.9 0.230 4.7 0.22 -177.9
2.4 0.078
-165.8
2.15
83.1 0.224 4.0 0.22 -177.2
2.5 0.076
-162.0
2.16
79.5 0.229 4.3 0.20 -177.1
2.6 0.080
-161.5
2.13
75.6 0.236 4.0 0.19 -177.7
2.7 0.084
-162.4
2.08
92.1 0.230 3.7 0.19 -177.3
2.8 0.077
-166.0
2.04
70.1 0.234 3.8 0.19 -179.4
2.9 0.087
-166.4
2.05
66.6 0.234 4.6 0.19 -177.4
3.0 0.104
-169.4
2.01
63.1 0.236 3.4 0.20 -177.4
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