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Электронный компонент: MP4TD0970

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Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0970

Features
Cascadable 50
Gain Block
3dB Bandwidth: DC to 4.5 GHz
8.0 dB Typical Gain @ 1.0 GHz
Low VSWR: <1.5:1 from 0.1 to 3.0 GHz
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0970 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
stripline package. The MP4TD0970 is designed to use
where a general purpose broad band (4.5 GHz) 50
gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial
and military applications.

The MP4TD0970 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
0
2
4
6
8
1 0
1 2
0 .1
1
1 0
F R E Q U E N C Y (G H z)
GAI
N
(
d
B)
Id= 3 5 m A
Gold-Ceramic Microstrip Package Outline
1,2
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 .030
12,57 0,76
.004 .002
0,10,05
.035
0,89
.070
1,78
.020
0,51
.040
1,02
Notes: (unless otherwise specified)
1.
Dimensions are in / mm
2.
Tolerance: in .xxx =
.005; mm .xx =
.13

Pin Configuration
Pin Number
Pin Description
1 RF
Input
2 & 4
AC/DC Ground
3
RF Output and DC Bias

Ordering Information
Model No.
Package
MP4TD0970 Ceramic
MP4TD0970T
Tape and Reel
Electrical Specifications @ T
A
= +25
C, Id = 35 mA, Z0 = 50
Symbol Parameters
Test
Conditions
Units Min. Typ. Max.
Gp
Power Gain (
S
21
2
)
f = 0.1 GHz
dB
7.0
8.0
9.0
Gp
Gain Flatness
f = 0.1 to 3.0 GHz
dB
-
0.4
0.6
f
3 dB
3 dB Bandwidth
-
GHz
-
4.5
-
SWR
in
Input SWR
f = 0.1 to 3.0 GHz
-
-
1.9
-
SWR
out
Output SWR
f = 0.1 to 3.0 GHz
-
-
1.4
-
P
1dB
Output Power @ 1 dB Gain Compression
f = 1.0 GHz
dBm
-
11.5
-
NF
50
Noise Figure
f = 1.0 GHz
dB
-
6.0
-
IP
3
Third Order Intercept Point
f = 1.0 GHz
dBm
-
23.0
-
t
D
Group Delay
f = 1.0 GHz
ps
-
100
-
V
d
Device
Voltage
-
V 7.0 7.8 8.6
dV/dT
Device Voltage Temperature Coefficient
-
mV/
C
- -16.0 -
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0970
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 2
PH (408) 432-1480 FX (408) 432-3440
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Device Current
80 mA
Power Dissipation
2,3
750
mW
RF Input Power
+20 dBm
Junction Temperature
200
C
Storage Temperature
-65
C to +150
C
Thermal Resistance:
jc
= 145
C/W
1. Exceeding these limits may cause permanent damage.
2. Case Temperature (Tc) = 25
C.
3. Derate at 6.9 mW/
C for Tc > 91
C.
Typical Bias Configuration
IN
OUT
1
2
3
4
RFC (Optional)
C (DC Block)
C (DC Block)
Rbias
Vcc > 10 V
Vd = 7.8 V
Id =
Vcc - Vd
Rbias
MP4TD0970

Typical Performance Curves @ Id = 35 mA, TA = +25
C (unless otherwise noted)


DEVICE CURRENT vs DEVICE VOLTAGE
0
1 0
2 0
3 0
4 0
5 0
6 0
0
2
4
6
8
10
Vd, D E VIC E VO L T AG E (V)
I
d
, DEVI
CE CURRENT (
m
A)


POWER GAIN vs CURRENT
4
5
6
7
8
9
1 0
2 0
3 0
4 0
50
Id, D E VIC E C U R R E N T (m A)
GAI
N (
d
B)
f= 0.1 G H z
f= 2 .0 G H z


RETURN LOSS vs FREQUENCY
-2 5
-2 0
-1 5
-1 0
-5
0
0 .1
1
1 0
F R E Q U E N C Y (G H z)
RETURN LOSS (
d
B)
Input
O utput

P
OUT
@ 1dB GAIN COMPRESSION
vs FREQUENCY
0
2
4
6
8
10
12
14
16
0. 1
1
10
FR E Q U E N C Y (G H z)
P
OU
T
- 1dB
(dB
m
)
Id= 2 5 m A
Id= 35 m A
Id= 45 m A
Silicon Bipolar MMIC Cascadable Amplifier MP4TD0970
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 3
PH (408) 432-1480 FX (408) 432-3440
NOISE FIGURE vs FREQUENCY
5
5 .5
6
6 .5
7
0 .1
1
1 0
F R E Q U E N C Y (G H z)
NOI
S
E FI
GURE (
d
B)
Id= 2 5 m A
Id= 3 5 m A
Id= 4 5 m A
REVERSE ISOLATION vs FREQUENCY
-15
-14
-13
-12
-11
-10
-9
-8
-7
0 .1
1
1 0
FR E Q U E N C Y (G H z)
REVERSE I
S
OLATI
O
N (
d
B)





Typical Scattering Parameters
Z0 = 50
, T
A
= +25
C, Id = 35 mA
Frequency S11
S21
S12
S22
(GHz)
Mag. Angle Mag. Angle Mag. Angle Mag Angle
0.1 0.164
-166.6
2.38
163.7 0.214 5.4 0.186 -158.0
0.2 0.162
-169.8
2.37
162.8 0.214 5.4 0.187 -159.4
0.4 0.158
-176.5
2.35
160.2 0.215 5.8 0.189 -162.3
0.6 0.153
175.9
2.33
156.7
0.216 6.5 0.194
-165.6
0.8 0.148
167.9
2.31
152.2
0.218 7.3 0.201
-169.4
1.0 0.144
162.1
2.30
146.7
0.220 8.7 0.213
-171.1
1.5 0.131
151.8
2.28
132.1
0.227 12.0 0.246
-176.1
2.0 0.116
147.0
2.27
117.4 0.236 15.0 0.280 175.4
2.5 0.104
149.7
2.24
102.2 0.248 17.2 0.304 165.5
3.0 0.106
157.1
2.17
87.2 0.259 18.6 0.313 155.3
3.5 0.127
162.0
2.06
73.2 0.269 19.2 0.315 147.3
4.0 0.164
161.4
1.93
60.6 0.276 19.6 0.308 142.6
4.5 0.212
154.1
1.78
49.4 0.280 19.4 0.313 140.2
5.0 0.266
144.6
1.64
39.1 0.281 19.7 0.323 139.7
6.0 0.365
123.0
1.35
23.7 0.275 21.5 0.381 138.6