4707 Dey Road Liverpool, N.Y. 13088
(315) 701-6751
FEATURES:
P and N Channel MOSFETs for Ease of Drive
100 Volt, 10 Amp Full H-Bridge
Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
Avalanche Rated Devices
ISO-9001 CERTIFIED BY DSCC
M.S.KENNEDY CORP.
H-BRIDGE
MOSFET POWER MODULE
Stepper Motor Servo Control
Disk Drive Head Control
X-Y Table Control
Az-El Antenna Control
TYPICAL APPLICATIONS
PIN-OUT INFORMATION
1
2
3
4
5
6
Gate Q1
Source Q1
Drain 1,2
Gate Q2
N/C
N/C
Source 4
Gate Q4
Drain 3,4
Gate Q3
N/C
Source 2,3
12
11
10
9
8
7
3014
1
EQUIVALENT SCHEMATIC
The MSK 3014 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package.
The MSK 3014 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom
transistors. The MSK 3014 uses M.S. Kennedy's proven power hybrid technology to bring a cost effective high
perfomance circuit for use in today's sophisticated servo motor and disk drive systems.
DESCRIPTION:
Rev. B 7/00
V
GS
=0 I
D
=0.25mA (All Transistors)
V
DS
=100V V
GS
=0V (Q2,Q3)
V
DS
=-100V V
GS
=0V (Q1,Q4)
V
GS
=20V V
DS
=0 (All Transistors)
V
DS
=V
GS
I
D
=250A (Q2,Q3)
V
DS
=V
GS
I
D
=250A (Q1,Q4)
V
GS
=10V I
D
=9.0A (Q2,Q3)
V
GS
=-10V I
D
=-8.4A (Q1,Q4)
V
GS
=10V I
D
=9.0A (Q2,Q3)
V
GS
=10V I
D
=-8.4A (Q1,Q4)
V
DS
=50V I
D
=9.0A (Q2,Q3)
V
DS
=-50V I
D
=-8.4A (Q1,Q4)
I
D
=9.0A
V
DS
=80V
V
GS
=10V
V
DD
=50V
I
D
=9.0A
R
G
=12
R
D
=5.5
V
GS
=0V
V
DS
=25V
f=1.0MHz
I
D
=-8.4A
V
DS
=-80V
V
GS
=-10V
V
DD
=-50V
I
D
=-8.4A
R
G
=9.1
R
D
=6.2
V
GS
=0V
V
DS
=-25V
f=1.0MHz
I
S
=9.0A V
GS
=0V (Q2,Q3)
I
S
=-8.4A V
GS
=0V (Q1,Q4)
I
S
=9.0A di/dt=100A/S (Q2,Q3)
I
S
=-8.4A di/dt=100A/S (Q1,Q4)
I
S
=9.0A di/dt=100A/S (Q2,Q3)
I
S
=-8.4A di/dt=100A/S (Q1,Q4)
ABSOLUTE MAXIMUM RATINGS
1
2
3
4
Drain-Source Leakage Current
Gate-Source Threshold Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Forward Transconductance
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
N-Channel (Q2,Q3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
P-CHANNEL (Q1,Q3,Q5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BODY DIODE
7.9mJ
7.9mJ
+175C MAX
-55C to +150C
-55C to +125C
300C MAX
Single Pulse Avalanche Energy
(Q2,Q4,Q6)
(Q1,Q3,Q5)
Junction Temperature
Storage Temperature
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds)
Drain to Source Voltage
Drain to Gate Voltage
(R
GS
=1M
)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Thermal Resistance
(Junction to Case)
V
DSS
V
DGDR
V
GS
I
D
I
DM
R
TH-JC
T
J
T
ST
T
C
T
LD
100V MAX
100V MAX
20V MAX
10A MAX
25A MAX
7.9C/W
Parameter
Units
MSK3014
Test Conditions
V
A
A
nA
V
V
S
S
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
V
V
nS
nS
C
C
Min.
100
-
-
-
2.0
2.0
-
-
-
-
6.4
3.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
6.4
27
37
25
640
160
88
-
-
-
15
58
45
46
760
260
170
1.3
-1.6
130
130
650
650
Max.
-
25
-25
100
4.0
4.0
0.20
0.28
0.11
0.20
-
-
44
6.2
21
-
-
-
-
-
-
-
58
8.3
32
-
-
-
-
-
-
-
-
-
190
190
970
970
ELECTRICAL SPECIFICATIONS
2
1
3
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
NOTES:
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
T
A
=25C unless otherwise specified.
4
Rev. B 7/00
2
Most everything applies to driving the P-Channel gates as the N-Channel gates. The only difference is that the P-Channel gate to
source voltage needs to be negative. Most motor drive IC's are set up with an open collector or drain output for directly interfacing
with the P-channel gates. If not, an external common emitter switching transistor configuration (see Figure 2) will turn the P-
Channel MOSFET on. All the other rules of MOSFET gate drive apply here. For high supply voltages, additional circuitry must be
used to protect the P-Channel gate from excessive voltages.
This deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with gate
resistors. This situation will be present when switching motor direction, or when sophisticated timing schemes are used for servo
systems such as locked antiphase PWM'ing for high bandwidth operation.
APPLICATION NOTES
N-CHANNEL GATES (Q2,Q3)
For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient
voltage to get the channel fully on. Driving the gates to +15 volts with respect to their sources assures that the transistors are on.
This will keep the dissipation down to a minimum level [R
DS(ON)
specified in the data sheet]. How quickly the gate gets turned ON
and OFF will determine the dissipation of the transistor while it is transitioning from OFF to ON, and vice-versa. Turning the gate
ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching noise
in the system. It is important to have as low a driving impedance as practical for the size of the transistor. Many motor drive IC's
have sufficient gate drive capability for the MSK 3014. If not, paralleled CMOS standard gates will usually be sufficient. A series
resistor in the gate circuit slows it down, but also suppresses any ringing caused by stray inductances in the MOSFET circuit. The
selection of the resistor is determined by how fast the MOSFET wants to be switched. See Figure 1 for circuit details.
P-CHANNEL GATES (Q1,Q4)
BRIDGE DRIVE CONSIDERATIONS
Figure 1
Figure 2
3
Figure 3
It is important that the logic used to turn ON and OFF the various transistors allow sufficient "dead time" between a high side
transistor and its low side transistor to make sure that at no time are they both ON. When they are, this is called "shoot-through",
and it places a momentary short across the power supply. This overly stresses the transistors and causes excessive noise as well.
See Figure 3.
Rev. B 7/00
TYPICAL PERFORMANCE CURVES
Rev. B 7/00
4
MECHANICAL SPECIFICATIONS
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make
changes to its products or specifications without notice, however, and assumes no liability for the use of its products.
M.S. Kennedy Corp.
4707 Dey Road, Liverpool, New York 13088
Phone (315) 701-6751
FAX (315) 701-6752
www.mskennedy.com
Rev. B 7/00
PART
NUMBER
MSK 3014
Industrial
SCREENING LEVEL
ORDERING INFORMATION
ALL DIMENSIONS ARE 0.010 INCHES UNLESS OTHERWISE
LABELED.
TORQUE SPECIFICATION 3 TO 5 IN/LBS. TEFLON SCREWS OR WASHERS ARE RECOMMENDED.
5
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