1
Stock No. 23126-05 4/01
Preliminary - Subject to change without notice
EM032L08
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
EM032L08 Family
32Kx8 Bit Ultra-Low Power Asynchronous Static RAM
Overview
The EM032L08 is an integrated memory device
containing a low power 256 Kbit Static Random
Access Memory organized as 32,768 words by 8
bits. The device is fabricated using an advanced
CMOS process and NanoAmp's high-speed/low-
power circuit technology. This device is also
designed for very low voltage operation making it
quite suitable for battery powered devices having
both very low operating and standby currents. The
device pinout is compatible with other standard
32k x 8 SRAMs.
Features
Wide Voltage Range:
2.3 to 3.6 Volts
Extended Temperature Range:
-20 to +80
o
C
Fast Cycle Time:
T
ACC
< 70 ns @ 3.0V
Very Low Operating Current:
I
CC
< 10 mA typical at 3V, 10 Mhz
Very Low Standby Current:
I
SB
< 10
A
@ 55
o
C
Available in 28 pin TSOP:
FIGURE 1: Typical Operating Current Curves
12.5
10.0
7.5
5.0
2.5
0.0
T
y
p
i
c
a
l
I
C
C
Operating Frequency (Mhz)
0 2.5 5.0 7.5 10.0 12.5 15.0
3.6 Volts
2.3 Volts
2
Stock No. 23126-05 4/01
Preliminary - Subject to change without notice
EM032L08
NanoAmp Solutions, Inc.
FIGURE 2: Pin Configurations
TABLE 1: Pin Functions
FIGURE 3: Functional Block Diagram
TABLE 2: Functional Description
* The device will consume active power in this mode whenever addresses are changed
TABLE 3: Capacitance*
* These parameters are verified in device characterization and are not 100% tested
Pin Name
Pin Function
Pin Name
Pin Function
A0-A14
Address Inputs
WE
Write Enable (Active Low)
I/O0 - I/O7
Data Inputs/Outputs
V
CC
Power
CE
Chip Enable (Active Low)
V
SS
Ground
OE
Output Enable (Active Low)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
EM032L08
TSOP
OE
A11
A9
A8
A13
WE
V
C C
A14
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
V
S S
I/O2
I/O1
I/O0
A0
A1
A2
CE
WE
OE
I/O
0
-I/O
7
MODE
POWER
H
X
X
High Z
Standby
Standby
L
L
X
Data In
Write
Active
L
H
L
Data Out
Read
Active
L
H
H
High Z
Active
Active
Item
Symbol
Test Condition
Min
Max
Unit
Input Capacitance
C
IN
V
IN
= 0V, f = 1 Mhz, T
A
= 25
o
C
8
pF
I/O Capacitance
C
I/O
V
IN
= 0V, f = 1 Mhz, T
A
= 25
o
C
8
pF
Control
Logic
32K x 8
RAM Array
Address
Decode
Logic
Address
Inputs
A
0
- A
14
CE
WE
OE
Input/
Output
Mux
and
Buffers
Data I/O
I/O
0
- I/O
7
3
Stock No. 23126-05 4/01
Preliminary - Subject to change without notice
EM032L08
NanoAmp Solutions, Inc.
TABLE 4: Absolute Maximum Ratings*
* Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TABLE 5: Operating Characteristics (Over specified Temperature Range)
1. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
2. This device assumes a standby mode if the chip is disabled ( CE high). In order to achieve low standby current all inputs must be
within 0.2 volts of either VCC or VSS.
Item
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN,OUT
0.3 to V
CC
+0.3
V
Voltage on V
CC
Supply Relative to V
SS
V
CC
0.3 to 5.0
V
Power Dissipation
P
D
500
mW
Storage Temperature
T
STG
-40 to 125
o
C
Operating Temperature
T
A
-20 to +80
o
C
Soldering Temperature and Time
T
SOLDER
260
o
C, 10sec(Lead only)
o
C
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Supply Voltage
V
CC
2.3
3.6
V
Data Retention Voltage
V
DR
Chip Disabled (Note 3)
1.8
V
Input High Voltage
V
IH
0.7V
CC
V
CC
+0.5
V
Input Low Voltage
V
IL
0.5
0.3V
CC
V
Output High Voltage
V
OH
I
OH
= 0.2mA
V
CC
0.2
V
Output Low Voltage
V
OL
I
OL
= -0.2mA
0.2
V
Input Leakage Current
I
LI
V
IN
= 0 to V
CC
0.5
A
Output Leakage Current
I
LO
OE = V
IH
or Chip Disabled
0.5
A
Read/Write Operating Supply Cur-
rent @ 1
S Cycle Time (Note 1)
I
CC1
VCC=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, IOL = 0
3.0
mA
Read/Write Operating Supply Cur-
rent @ 70 nS Cycle Time (Note 1)
I
CC2
VCC=3.6 V, V
IN
=V
IH
or V
IL
Chip Enabled, IOL = 0
12.0
mA
Read/Write Quiescent Operating
Supply Current (Note 2)
I
CC3
V
IN
= V
CC
or 0V
Chip Enabled, IOL = 0 f = 0,
t
A
= 85
o
C, VCC = 3.3 V
2
mA
Operating Standby Current
(Note 2)
I
SB1
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 55
o
C, VCC = 3.3V
10
A
Maximum Standby Current
(Note 2)
I
SB2
V
IN
= V
CC
or 0V
Chip Disabled
t
A
= 85
o
C, VCC = 3.3V
20
A
Maximum Data Retention Current
(Note 2)
I
DR
Vcc = 2.0V, V
IN
= V
CC
or 0
Chip Disabled, t
A
= 85
o
C
10
A
4
Stock No. 23126-05 4/01
Preliminary - Subject to change without notice
EM032L08
NanoAmp Solutions, Inc.
TABLE 6: 3Timing Test Conditions (Over the Specified Temperature Range)
TABLE 7: Timing
Item
Input Pulse Level
0.1V
CC
to 0.9V
CC
Input Rise and Fall Time
5nS
Input and Output Timing Reference Levels
0.5V
CC
Output Load
CL = 30pF
Item
Symbol
2.3 - 3.6 V
2.7 - 3.6 V
Units
Min.
Max.
Min.
Max.
Read Cycle Time
t
RC
85
70
ns
Address Access Time
t
AA
85
70
ns
Chip Enable to Valid Output
t
CO
85
70
ns
Output Enable to Valid Output
t
OE
25
20
ns
Chip Enable to Low-Z output
t
LZ
10
10
ns
Output Enable to Low-Z Output
t
OLZ
5
5
ns
Chip Disable to High-Z Output
t
HZ
0
20
0
15
ns
Output Disable to High-Z Output
t
OHZ
0
20
0
15
ns
Output Hold from Address Change
t
OH
10
10
ns
Write Cycle Time
t
WC
85
70
ns
Chip Enable to End of Write
t
CW
50
50
ns
Address Valid to End of Write
t
AW
50
50
ns
Write Pulse Width
t
WP
40
40
ns
Address Setup Time
t
AS
0
0
ns
Write Recovery Time
t
WR
0
0
ns
Write to High-Z Output
t
WHZ
20
15
ns
Data to Write Time Overlap
t
DW
40
40
ns
Data Hold from Write Time
t
DH
0
0
ns
End Write to Low-Z Output
t
OW
5
5
ns
5
Stock No. 23126-05 4/01
Preliminary - Subject to change without notice
EM032L08
NanoAmp Solutions, Inc.
FIGURE 4: Read Cycle Timing (WE = V
IH
)
FIGURE 5: Write Cycle (1) Timing (OE clock)
A0-A14
CE
OE
D0-D7
t
RC
t
CE
t
OE
t
OHZ
t
HZ
t
AA
Data Valid
t
LZ
t
OH
t
OLZ
A0-A14
OE
CE
WE
Data In
Data Out
t
WC
t
AW
t
CW
t
WP
t
WHZ
t
DW
t
DH
Data
High-Z
t
WR
t
OHZ
t
OW
t
AS
6
Stock No. 23126-05 4/01
Preliminary - Subject to change without notice
EM032L08
NanoAmp Solutions, Inc.
FIGURE 6: Write Cycle (2) Timing (OE fixed)
TABLE 8: Ordering Information
* Please use this part number when ordering this product. This number will be marked on the device package.
TABLE 9: Revision History
1998-2001 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the in-
formation contained in this datasheet and the products described therein, without prior
notice. NanoAmp does not convey any license under its patent rights nor the rights of
others. Charts, drawings and schedules contained in this datasheet are provided for
illustration purposes only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for
any particular purpose, nor does NanoAmp assume any liability arising out of the ap-
plication or use of any product or circuit described herein. NanoAmp does not autho-
rize use of its products as critical components in any application in which the failure of
the NanoAmp product may be expected to result in significant injury or death, including
life support systems and critical medical instruments.
A0-A14
CE
WE
Data In
Data Out
t
WP
t
DW
t
DH
Data Valid
High-Z
t
WHZ
t
OW
t
WC
t
AW
t
CW
t
WR
t
AS
t
OH
Part Number*
Package
Temperature
Range
Voltage
Range
Speed @ 2.7V
EM032L08T
28 pin TSOP
-20 to +80
o
C
2.3 to 3.6 V
70 ns
Revision #
Date
Change Description
01
Dec. 98
Initial Release
02
Oct. 00
Change to 70 ns at 2.7V
03
Nov. 00
Corrected ordering information to 28 pin TSOP, Temp to -40/85, corrected
speed specifications (70 ns at 3.0 volts)
04
Jan. 01
Lowered minimum operating voltage from 2.7 to 2.3 volts
Updated timing to latest standards
05
Apr. 01
Added Table 3: Capacitance, revised quiescent operating current,
corrected access time on page 1, other minor edits
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