Document No. D16125EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1741
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1741 is a power transistor developed for high-speed
switching and features a high h
FE
at low V
CE(sat)
. This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
100 (V
CE
=
-2 V, I
C
=
-1 A)
V
CE(sat)
0.3 V (I
C
=
-3 A, I
B
=
-0.15 A)
Full-mold package that does not require an insulating board or
bushing when mounting.
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
-100
V
Collector to emitter voltage
V
CEO
-60
V
Emitter to base voltage
V
EBO
-7.0
V
Collector current (DC)
I
C(DC)
-5.0
A
Collector current (pulse)
I
C(pulse)
*
-10
A
Base current (DC)
I
B(DC)
-2.5
A
Total power dissipation
P
T
(Tc = 25
C)
25
W
Total power dissipation
P
T
(Ta = 25
C)
2.0
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
* PW
300
s, duty cycle 50%
Data Sheet D16125EJ1V0DS
2
2SA1741
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
V
CEO(SUS)
I
C
=
-3.0 A, I
B
=
-0.3 A, L = 1 mH
-60
V
Collector to emitter voltage
V
CEX(SUS)
I
C
=
-3.0 A, I
B1
=
-I
B2
=
-0.3 A,
V
BE(OFF)
= 1.5 V, L = 180
H, clamped
-60
V
Collector cutoff current
I
CBO
V
CB
=
-60 V, I
E
= 0
-10
A
Collector cutoff current
I
CER
V
CE
=
-60 V, R
BE
= 50
, Ta = 125C
-1.0
mA
Collector cutoff current
I
CEX1
V
CE
=
-60 V, V
BE(OFF)
= 1.5 V
-10
A
Collector cutoff current
I
CEX2
V
CE
=
-60 V, V
BE(OFF)
= 1.5 V,
Ta = 125
C
-1.0
mA
Emitter cutoff current
I
EBO
V
EB
=
-5.0 V, I
C
= 0
-10
A
DC current gain
h
FE1
*
V
CE
=
-2.0 V, I
C
=
-0.5 A
100
DC current gain
h
FE2
*
V
CE
=
-2.0 V, I
C
=
-1.0 A
100
400
DC current gain
h
FE3
*
V
CE
=
-2.0 V, I
C
=
-3.0 A
60
Collector saturation voltage
V
CE(sat)1
*
I
C
=
-3.0 A, I
B
=
-0.15 A
-0.3
V
Collector saturation voltage
V
CE(sat)2
*
I
C
=
-4.0 A, I
B
=
-0.2 A
-0.5
V
Base saturation voltage
V
BE(sat)1
*
I
C
=
-3.0 A, I
B
=
-0.15 A
-1.2
V
Base saturation voltage
V
BE(sat)2
*
I
C
=
-4.0 A, I
B
=
-0.2 A
-1.5
V
Collector capacitance
C
ob
V
CB
=
-10 V, I
E
= 0, f = 1.0 MHz
130
pF
Gain bandwidth product
f
T
V
CE
=
-10 V, I
C
=
-0.5 A
80
MHz
Turn-on time
t
on
0.3
s
Storage time
t
stg
1.5
s
Fall time
t
f
I
C
=
-3.0 A, R
L
= 17
,
I
B1
=
-I
B2
=
-0.15 A, V
CC
-50 V
Refer to the test circuit.
0.3
s
* Pulse test PW
350
s, duty cycle 2%
h
FE
CLASSIFICATION
Marking
M
L
K
h
FE2
100 to 200
150 to 300
200 to 400
TYPICAL CHARACTERISTICS (Ta = 25
C)
T
o
t
a
l
P
o
w
e
r Di
ss
i
pat
i
o
n
P
T
(
W
)
Case Temperature T
C
(
C)
I
C
Derat
i
ng
dT
(%
)
Case Temperature T
C
(
C)
Data Sheet D16125EJ1V0DS
3
2SA1741
Trans
i
ent
Ther
m
a
l
Res
i
s
t
an
c
e
R
th
Pulse Width (s)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Col
l
e
c
t
or Current
I
C
(
A
)
Col
l
e
c
t
or Current
I
C
(
A
)
Col
l
e
c
t
or Current
I
C
(A
)
Col
l
e
c
t
or Current
I
C
(
A
)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Single pulse
Without heatsink
With infinite heatsink
Data Sheet D16125EJ1V0DS
4
2SA1741
Collector Current I
C
(A)
Collector Current I
C
(A)
B
a
s
e
S
a
t
u
ra
t
i
on V
o
l
t
age
V
BE(s
a
t
)
(V
)
Gai
n
B
andw
i
d
t
h
P
r
odu
c
t
f
T
(M
Hz)
Col
l
e
c
t
or Current
I
C
(
A
)
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(A)
DC Current
Gai
n
h
FE
Collector Current I
C
(A)
Col
l
e
c
t
or S
a
t
u
ra
t
i
on V
o
l
t
age
V
CE
(
s
a
t
)
(V
)
Pulse test
Single pulse
Collector Current I
C
(A)
DC Current
Gai
n
h
FE
Pulse test
Pulse test
Pulse test
Pulse test
Pulse test
Data Sheet D16125EJ1V0DS
5
2SA1741
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SWITCHING TIME (t
on
, t
stg
, t
f
) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2SA1741
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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